2STR1160

2STR1160 Low voltage fast-switching NPN power transistor Datasheet - production data Features     Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits Description SOT-23 Figure 1: Internal schematic diagram The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STR2160. Applications     LED Battery charger Motor and relay driver Voltage regulation Table 1: Device summary April 2015 Order code Marking Package Packing 2STR1160 1160 SOT-23 Tape and reel DocID14430 Rev 3 This is information on a product in full production. 1/9 www.st.com Electrical ratings 1 2STR1160 Electrical ratings Table 2: Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 60 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 1 A ICM Collector peak current (tP < 5ms) 2 A Ptot Total dissipation at Tamb = 25°C 0.5 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 250 °C/ W Max. operating junction temperature TJ Table 3: Thermal data Symbol Rthj-amb(1) Parameter Thermal resistance junction-amb max Notes: (1)Device 2/9 mounted on PCB area of 1 cm 2 DocID14430 Rev 3 2STR1160 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4: Electrical characteristics Symbol Parameter Max. Unit ICBO Collector cut-off current (IE =0) VCB = 60 V 0.1 μA IEBO Emitter cut-off current (IC =0) VEB = 5 V 0.1 μA V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 100 μA 60 V V(BR)CEO(1) Collector-emitter breakdown voltage (IB = 0) IC = 10 mA 60 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 μA 5 V VCE(sat) Collector-emitter saturation voltage VBE(sat) Base-emitter saturation voltage hFE DC current gain Test conditions Min. Typ. IC = 0.5 A IB = 50 mA 130 210 mV IC = 1 A IB = 100 mA 210 430 mV IC = 1 A IB = 100 mA 0.9 1.25 V 560 IC = 0.5 A VCE = 2V 180 250 IC = 1 A VCE = 2V 85 130 IC = 2 A VCE = 2V 30 IC = 1.5 A VCC = 10 V IB1 = -IB2 = 150 mA VBB(off)= -5 V 220 ns 500 ns Resistive load ton Turn-on time t off Turn-off time Notes: (1)Pulse test: pulse duration = 300 μs, duty cycle ≤ 1.5 %% DocID14430 Rev 3 3/9 Electrical characteristics 2.1 4/9 2STR1160 Typical characteristic (curves) Figure 2: DC current gain (@ VCE=1 V) Figure 3: DC current gain (@ VCE=2 V) Figure 4: Base-emitter on voltage Figure 5: Base-emitter saturation voltage Figure 6: Collector-emitter saturation voltage Figure 7: Capacitance curves DocID14430 Rev 3 2STR1160 Electrical characteristics Figure 8: Resistive load switching time DocID14430 Rev 3 Figure 9: Resistive load switching time 5/9 Package mechanical data 3 2STR1160 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 3.1 SOT-23 mechanical data Figure 10: SOT-23 mechanical drawing 6/9 DocID14430 Rev 3 2STR1160 Package mechanical data Table 5: SOT-23 mechanical data mm Dim. Min. Typ. Max. A 0.89 1.40 A1 0 0.10 B 0.30 0.51 C 0.085 0.18 D 2.75 3.04 e 0.85 1.05 e1 1.70 2.10 E 1.20 1.75 H 2.10 3.00 L 0.60 S 0.35 0.65 L1 0.25 0.55 a 0° 8° Figure 11: SOT-23 recommended footprint Dimensions are in mm. DocID14430 Rev 3 7/9 Revision history 4 2STR1160 Revision history Table 6: Document revision history 8/9 Date Revision Changes 12-Feb-2008 1 Initial release 08-May-2014 2 Updated Section 3: "Package mechanical data". 01-Apr-2015 3 Updated marking in Table 1: "Device summary" DocID14430 Rev 3 2STR1160 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID14430 Rev 3 9/9