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2STR2160

2STR2160

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT346

  • 描述:

    TRANS PNP 60V 1A SOT23-3

  • 数据手册
  • 价格&库存
2STR2160 数据手册
2STR2160 Low voltage fast-switching PNP power transistor Datasheet - production data Features     Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits Applications     SOT-23 Figure 1: Internal schematic diagram LED Battery charger Motor and relay driver Voltage regulation Description The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STR1160. Table 1: Device summary Order code Marking Package Packing 2STR2160 2160 SOT-23 Tape and reel March 2015 DocID14828 Rev 3 This is information on a product in full production. 1/8 www.st.com Contents 2STR2160 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 3 Package mechanical data ............................................................... 5 3.1 4 2/8 SOT-23 mechanical data .................................................................. 5 Revision history .............................................................................. 7 DocID14828 Rev 3 2STR2160 1 Electrical ratings Electrical ratings Table 2: Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -60 V VCEO Collector-emitter voltage (IB = 0) -60 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -1 A ICM Collector peak current (tP < 5ms) -2 A Ptot Total dissipation at Tamb = 25°C 0.5 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 250 °C/W Max. operating junction temperature TJ Table 3: Thermal data Symbol Rthj-amb (1) Parameter Thermal resistance junction-amb max Notes: (1)Device mounted on PCB area of 1 cm2 DocID14828 Rev 3 3/8 Electrical characteristics 2 2STR2160 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4: Electrical characteristics Symbol Parameter Max. Unit ICBO Collector cut-off current (IE =0) VCB = -60 V -0.1 μA IEBO Emitter cut-off current (IC =0) VEB = -5 V -0.1 μA V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = -100 μA -60 V V(BR)CEO(1) Collector-emitter breakdown voltage (IB = 0) IC = -10 mA -60 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = -100 μA -5 V VCE(sat) Collector-emitter saturation voltage VBE(sat) Base-emitter saturation voltage hFE DC current gain Test conditions Min. Typ. IC = -0.5 A IB = -50 mA 260 mV IC = -1 A IB = -100 mA 480 mV IC = -1 A IB = -100 mA 1.3 V IC = -0.5 A VCE = -2V 180 IC = -1 A VCE = -2 V 45 560 IC = -2 A VCE = -2 V 30 IC = -1.5 A VCC = -10 V IB1 = -IB2 = -150 mA VBB(off)= 5 V 220 ns 500 ns Resistive load ton Turn-on time t off Turn-off time Notes: (1)Pulse 4/8 test: pulse duration = 300 μs, duty cycle ≤ 1.5 % DocID14828 Rev 3 2STR2160 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 3.1 SOT-23 mechanical data Figure 2: SOT-23 mechanical drawing DocID14828 Rev 3 5/8 Package mechanical data 2STR2160 Table 5: SOT-23 mechanical data mm Dim. Min. Typ. A 0.89 1.40 A1 0 0.10 B 0.30 0.51 C 0.085 0.18 D 2.75 3.04 e 0.85 1.05 e1 1.70 2.10 E 1.20 1.75 H 2.10 3.00 L 0.60 S 0.35 0.65 L1 0.25 0.55 a 0° 8° Figure 3: SOT-23 recommended footprint Dimensions are in mm. 6/8 Max. DocID14828 Rev 3 2STR2160 4 Revision history Revision history Table 6: Document revision history Date Revision Changes 18-Jun-2008 1 Initial release 08-May-2014 2 Updated Section 3: "Package mechanical data". 13-Mar-2015 3 Updated marking in Table 1: "Device summary" DocID14828 Rev 3 7/8 2STR2160 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 8/8 DocID14828 Rev 3
2STR2160 价格&库存

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