74LVC00ATTR

74LVC00A LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE HIGH PERFORMANCE s s s s s s s s s s 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.3ns (MAX.) at VCC = 3V POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V PCI BUS LEVELS GUARANTEED AT 24 mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 00 LATCH-UP PERFORMANCE EXCEEDS 500mA (JESD 17) ESD PERFORMANCE: HBM > 2000V (MIL STD 883 method 3015); MM > 200V SOP TSSOP ORDER CODES PACKAGE SOP TSSOP TUBE 74LVC00AM T&R 74LVC00AMTR 74LVC00ATTR DESCRIPTION The 74LVC00A is a low voltage CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.65 to 3.6 VCC operations and low power and low noise applications. It can be interfaced to 5V signal environment for inputs in mixed 3.3/5V system. It has more speed performance at 3.3V than 5V AC/ACT family, combined with a lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS February 2002 1/8 74LVC00A INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y H H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage (VCC = 0V) DC Output Voltage (High or Low State) (note 1) DC Input Diode Current DC Output Diode Current (note 2) DC Output Current Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 50 - 50 ± 50 ± 100 -65 to +150 300 Unit V V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current per Supply Pin Tstg Storage Temperature TL Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) IO absolute maximum rating must be observed 2) VO < GND 2/8 74LVC00A RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO VO IOH, IOL IOH, IOL IOH, IOL IOH, IOL Top dt/dv Supply Voltage (note 1) Input Voltage Output Voltage (VCC = 0V) Output Voltage (High or Low State) High or Low Level Output Current (VCC = 3.0 to 3.6V) High or Low Level Output Current (VCC = 2.7 to 3.0V) High or Low Level Output Current (VCC = 2.3 to 2.7V) High or Low Level Output Current (VCC = 1.65 to 2.3V) Operating Temperature Input Rise and Fall Time (note 2) Parameter Value 1.65 to 3.6 0 to 5.5 0 to 5.5 0 to VCC ± 24 ± 12 ±8 ±4 -55 to 125 0 to 10 Unit V V V V mA mA mA mA °C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 2.7 to 3.6 1.65 to 1.95 2.3 to 2.7 2.7 to 3.6 1.65 to 3.6 1.65 2.3 2.7 3.0 3.0 VOL Low Level Output Voltage 1.65 to 3.6 1.65 2.3 2.7 3.0 II Ioff ICC Input Leakage Current Power Off Leakage Current Quiescent Supply Current ICC incr. per Input 3.6 0 IO=-100 µA IO=-4 mA IO=-8 mA IO=-12 mA IO=-18 mA IO=-24 mA IO=100 µA IO=4 mA IO=8 mA IO=12 mA IO=24 mA VI = 0 to 5.5V VI or VO = 5.5V VI = VCC or GND 3.6 2.7 to 3.6 VI or VO = 3.6 to 5.5V VIH = VCC-0.6V VCC-0.2 1.2 1.7 2.2 2.4 2.2 0.2 0.45 0.7 0.4 0.55 ±5 10 10 ± 10 500 -40 to 85 °C Min. 0.65VCC 1.7 2 0.35VCC 0.7 0.8 VCC-0.2 1.2 1.7 2.2 2.4 2.2 0.2 0.45 0.7 0.4 0.55 ±5 10 10 ± 10 500 µA µA µA µA V V Max. Value -55 to 125 °C Min. 0.65VCC 1.7 2 0.35VCC 0.7 0.8 V V Max. Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL VOH ∆ICC 3/8 74LVC00A DYNAMIC SWITCHING CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 3.3 CL = 50pF VIL = 0V, VIH = 3.3V Value TA = 25 °C Min. Typ. 0.8 -0.8 Max. V Unit VOLP VOLV Dynamic Low Level Quiet Output (note 1) 1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining output is measured in the LOW state. AC ELECTRICAL CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 2.7 to 3.6 CL (pF) 30 30 50 50 RL (Ω) 1000 500 500 500 ts = tr (ns) 2.0 2.0 2.5 2.5 -40 to 85 °C Min. Max. 9.0 6.0 5.1 4.3 1 Value -55 to 125 °C Min. Max. 12 8.0 6.1 5.1 1 Unit tPLH tPHL Propagation Delay Time ns 1 1 tOSLH tOSHL Output To Output Skew Time (note1, 2) ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = | tPLHm - t PLHn|, tOSHL = | tPHLm - tPHLn| 2) Parameter guaranteed by design CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) Value TA = 25 °C Min. fIN = 10MHz Typ. 4 1.8 2.5 3.3 27 30 33 Max. pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x f IN + ICC/n (per circuit) 4/8 74LVC00A TEST CIRCUIT RT = ZOUT of pulse generator (typically 50Ω) TEST CIRCUIT AND WAVEFORM SYMBOL VALUE Symbol 1.65 to 1.95V CL RL VIH VM VOH tr = tr 30pF 1000Ω VCC VCC/2 VCC