74LVC244A

74LVC244A LOW VOLTAGE CMOS QUAD BUS BUFFERS (3-STATE) HIGH PERFORMANCE s s s s s s s s s s 5V TOLERANT INPUTS HIGH SPEED: tPD = 5.9ns (MAX.) at VCC = 3V POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V PCI BUS LEVELS GUARANTEED AT 24 mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 244 LATCH-UP PERFORMANCE EXCEEDS 500mA (JESD 17) ESD PERFORMANCE: HBM > 2000V (MIL STD 883 method 3015); MM > 200V SOP TSSOP ORDER CODES PACKAGE SOP TSSOP TUBE 74LVC244AM T&R 74LVC244AMTR 74LVC244ATTR DESCRIPTION The 74LVC244A is a low voltage CMOS OCTAL BUS BUFFER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.65 to 3.6 VCC operations and low power and low noise applications. It can be interfaced to 5V signal environment for inputs in mixed 3.3/5V system. G control output governs four BUS BUFFERs. This device is designed to be used with 3 state memory address drivers, etc. It has more speed performance at 3.3V than 5V AC/ACT family, combined with a lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS February 2002 . 1/9 74LVC244A INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2, 4, 6, 8 9, 7, 5, 3 11, 13, 15, 17 18, 16, 14, 12 19 10 20 SYMBOL 1G 1A1 to 1A4 2Y1 to 2Y4 2A1 to 2A4 1Y1 to 1Y4 2G GND VCC NAME AND FUNCTION Output Enable Input Data Inputs Data Outputs Data Inputs Data Outputs Output Enable Input Ground (0V) Positive Supply Voltage TRUTH TABLE INPUTS G L L H X : Don’t care Z : High Impedance OUTPUT An L H X Yn L H Z ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage (High Impedance or VCC = 0V) DC Output Voltage (High or Low State) (note 1) DC Input Diode Current DC Output Diode Current (note 2) DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 50 - 50 ± 50 ± 100 -65 to +150 300 Unit V V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current per Supply Pin Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) IO absolute maximum rating must be observed 2) VO < GND 2/9 74LVC244A RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO VO IOH, IOL IOH, IOL IOH, IOL IOH, IOL Top dt/dv Supply Voltage (note 1) Input Voltage Output Voltage (High Impedance or VCC = 0V) Output Voltage (High or Low State) High or Low Level Output Current (VCC = 3.0 to 3.6V) High or Low Level Output Current (VCC = 2.7 to 3.0V) High or Low Level Output Current (VCC = 2.3 to 2.7V) High or Low Level Output Current (VCC = 1.65 to 2.3V) Operating Temperature Input Rise and Fall Time (note 2) Parameter Value 1.65 to 3.6 0 to 5.5 0 to 5.5 0 to VCC ± 24 ± 12 ±8 ±4 -55 to 125 0 to 10 Unit V V V V mA mA mA mA °C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 2.7 to 3.6 1.65 to 1.95 2.3 to 2.7 2.7 to 3.6 1.65 to 3.6 1.65 2.3 2.7 3.0 3.0 VOL Low Level Output Voltage 1.65 to 3.6 1.65 2.3 2.7 3.0 II Ioff IOZ Input Leakage Current Power Off Leakage Current High Impedance Output Leakage Current Quiescent Supply Current ICC incr. per Input 3.6 0 3.6 IO=-100 µA IO=-4 mA IO=-8 mA IO=-12 mA IO=-18 mA IO=-24 mA IO=100 µA IO=4 mA IO=8 mA IO=12 mA IO=24 mA VI = 0 to 5.5V VI or VO = 5.5V VI = VIH orVIL VO = 0 to 5.5V VI = VCC or GND 3.6 2.7 to 3.6 VI or VO = 3.6 to 5.5V VIH = VCC-0.6V VCC-0.2 1.2 1.7 2.2 2.4 2.2 0.2 0.45 0.7 0.4 0.55 ±5 10 ±5 -40 to 85 °C Min. 0.65VCC 1.7 2 0.35VCC 0.7 0.8 VCC-0.2 1.2 1.7 2.2 2.4 2.2 0.2 0.45 0.7 0.4 0.55 ±5 10 ±5 µA µA µA V V Max. Value -55 to 125 °C Min. 0.65VCC 1.7 2 0.35VCC 0.7 0.8 V V Max. Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL VOH ICC 10 ± 10 500 10 ± 10 500 µA µA 3/9 ∆ICC 74LVC244A DYNAMIC SWITCHING CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 3.3 CL = 50pF VIL = 0V, VIH = 3.3V Value TA = 25 °C Min. Typ. 0.8 -0.8 Max. V Unit VOLP VOLV Dynamic Low Level Quiet Output (note 1) 1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining output is measured in the LOW state. AC ELECTRICAL CHARACTERISTICS Test Condition Symbol Parameter VCC (V) CL (pF) 30 30 50 50 30 30 50 50 30 30 50 50 RL (Ω) 1000 500 500 500 1000 500 500 500 1000 500 500 500 ts = tr (ns) 2.0 2.0 2.5 2.5 2.0 2.0 2.5 2.5 2.0 2.0 2.5 2.5 -40 to 85 °C Min. Max. 9.0 7.9 6.9 5.9 11 9.6 8.6 7.6 9.0 7.8 6.8 6.5 1 Value -55 to 125 °C Min. Max. 12 10.5 8.3 7.1 14.3 12.5 10.3 9.1 11.7 10.1 8.2 7.8 1 Unit tPLH tPHL Propagation Delay Time tPZL tPZH tPLZ tPHZ tOSLH tOSHL 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 Output Enable Time 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 Output Disable Time 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 Output To Output 2.7 to 3.6 Skew Time (note1, 2) 1.5 1 ns 1 1 ns 2 2 ns ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = | tPLHm - t PLHn|, tOSHL = | tPHLm - tPHLn| 2) Parameter guaranteed by design CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) Value TA = 25 °C Min. fIN = 10MHz Typ. 4 1.8 2.5 3.3 28 30 34 Max. pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x f IN + ICC/n (per circuit) 4/9 74LVC244A TEST CIRCUIT RT = ZOUT of pulse generator (typically 50Ω) TEST CIRCUIT AND WAVEFORM SYMBOL VALUE Symbol 1.65 to 1.95V CL R L = R1 VS VIH VM VOH VX VY tr = tr 30pF 1000Ω 2 x VCC VCC VCC/2 VCC VOL + 0.15V VOH - 0.15V