74LVC86ATTR

74LVC86A LOW VOLTAGE CMOS QUAD EXCLUSIVE OR GATE HIGH PERFORMANCE ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.2ns (MAX.) at VCC = 3V POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V PCI BUS LEVELS GUARANTEED AT 24 mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 86 LATCH-UP PERFORMANCE EXCEEDS 500mA (JESD 17) ESD PERFORMANCE: HBM > 2000V (MIL STD 883 method 3015); MM > 200V DESCRIPTION The 74LVC86A is a low voltage CMOS QUAD EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.65 to 3.6 SOP TSSOP Table 1: Order Codes PACKAGE T&R SOP TSSOP 74LVC86AMTR 74LVC86ATTR VCC operations and low power and low noise applications. It can be interfaced to 5V signal environment for inputs in mixed 3.3/5V system. It has more speed performance at 3.3V than 5V AC/ACT family, combined with a lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. Figure 1: Pin Connection And IEC Logic Symbols July 2004 Rev. 4 1/11 74LVC86A Figure 2: Input And Output Equivalent Circuit Table 2: Pin Description PIN N° SYMBOL 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 1A to 4A 1B to 4B 1Y to 4Y GND VCC 14 Table 3: Truth Table NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) A B Y L L H H L H L H L H H L Positive Supply Voltage Table 4: Absolute Maximum Ratings Symbol VCC Parameter Value Unit Supply Voltage -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage (VCC = 0V) -0.5 to +7.0 V VO DC Output Voltage (High or Low State) (note 1) IIK DC Input Diode Current IOK IO -0.5 to VCC + 0.5 V - 50 mA DC Output Diode Current (note 2) - 50 mA DC Output Current ± 50 mA ICC or IGND DC VCC or Ground Current per Supply Pin Tstg Storage Temperature TL Lead Temperature (10 sec) ± 100 mA -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) IO absolute maximum rating must be observed 2) VO < GND 2/11 74LVC86A Table 5: Recommended Operating Conditions Symbol VCC Parameter Supply Voltage (note 1) Value Unit 1.65 to 3.6 V VI Input Voltage 0 to 5.5 V VO Output Voltage (VCC = 0V) 0 to 5.5 V VO Output Voltage (High or Low State) 0 to VCC V IOH, IOL High or Low Level Output Current (VCC = 3.0 to 3.6V) ± 24 mA IOH, IOL High or Low Level Output Current (VCC = 2.7 to 3.0V) ± 12 mA IOH, IOL High or Low Level Output Current (VCC = 2.3 to 2.7V) ±8 mA IOH, IOL High or Low Level Output Current (VCC = 1.65 to 2.3V) Top dt/dv Operating Temperature Input Rise and Fall Time (note 2) ±4 mA -55 to 125 °C 0 to 10 ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V Table 6: DC Specifications Test Condition Symbol VIH VIL VOH VOL II Ioff ICC ∆ICC Parameter Value -40 to 85 °C -55 to 125 °C VCC (V) Min. High Level Input Voltage 1.65 to 1.95 0.65VCC 0.65VCC 2.3 to 2.7 2.7 to 3.6 1.7 2 1.7 2 Low Level Input Voltage 1.65 to 1.95 0.35VCC 0.35VCC 2.3 to 2.7 2.7 to 3.6 0.7 0.8 0.7 0.8 High Level Output Voltage 1.65 to 3.6 Low Level Output Voltage Input Leakage Current Power Off Leakage Current Quiescent Supply Current ICC incr. per Input Max. Min. Unit Max. V IO=-100 µA VCC-0.2 VCC-0.2 1.65 IO=-4 mA 1.2 1.2 2.3 IO=-8 mA 1.7 1.7 2.7 IO=-12 mA 2.2 2.2 3.0 IO=-18 mA 2.4 2.4 3.0 IO=-24 mA 2.2 2.2 1.65 to 3.6 IO=100 µA 0.2 0.2 1.65 IO=4 mA 0.45 0.45 V V 2.3 IO=8 mA 0.7 0.7 2.7 IO=12 mA 0.4 0.4 3.0 IO=24 mA 0.55 0.55 3.6 VI = 0 to 5.5V ±5 ±5 µA 0 VI or VO = 5.5V 10 10 µA VI = VCC or GND 10 10 VI or VO = 3.6 to 5.5V VIH = VCC-0.6V ± 10 ± 10 500 500 3.6 2.7 to 3.6 V µA µA 3/11 74LVC86A Table 7: Dynamic Switching Characteristics Test Condition Symbol VOLP VOLV Parameter Value TA = 25 °C VCC (V) Dynamic Low Level Quiet Output (note 1) Min. Typ. Max. 0.8 CL = 50pF VIL = 0V, VIH = 3.3V 3.3 Unit V -0.8 1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining output is measured in the LOW state. Table 8: AC Electrical Characteristics Test Condition Symbol tPLH tPHL tOSLH tOSHL Parameter Propagation Delay Time Output To Output Skew Time (note1, 2) Value VCC (V) CL (pF) RL (Ω) ts = t r (ns) 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 2.7 to 3.6 30 30 50 50 1000 500 500 500 2.0 2.0 2.5 2.5 -40 to 85 °C Min. 1 Max. 8.9 5.9 4.8 4.2 1 -55 to 125 °C Min. 1 Unit Max. 12 8.0 5.8 5.0 1 ns ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = | tPLHm - tPLHn|, tOSHL = | tPHLm - tPHLn| 2) Parameter guaranteed by design Table 9: Capacitive Characteristics Test Condition Symbol Parameter CIN Input Capacitance CPD Power Dissipation Capacitance (note 1) TA = 25 °C VCC (V) 1.8 2.5 3.3 Value Min. fIN = 10MHz Typ. Unit Max. 4 pF 32 33 37 pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/n (per circuit) 4/11 74LVC86A Figure 3: Test Circuit RT = ZOUT of pulse generator (typically 50Ω) Table 10: Test Circuit And Waveform Symbol Value VCC Symbol 1.65 to 1.95V 2.3 to 2.7V 2.7V 3.0 to 3.6V CL 30pF 30pF 50pF 50pF RL 1000Ω 500Ω 500Ω 500Ω VIH VCC VCC 2.7V 2.7V VM VCC/2 VCC/2 1.5V 1.5V VOH VCC VCC 3.0V 3.0V tr = tr