0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
74LVCU04AMTR

74LVCU04AMTR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    74LVCU04AMTR - LOW VOLTAGE CMOS HEX INVERTER (SINGLE STAGE) HIGH PERFORMANCE - STMicroelectronics

  • 数据手册
  • 价格&库存
74LVCU04AMTR 数据手册
74LVCU04A LOW VOLTAGE CMOS HEX INVERTER (SINGLE STAGE) HIGH PERFORMANCE s s s s s s s s s s 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.2ns (MAX.) at VCC = 3V POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V PCI BUS LEVELS GUARANTEED AT 24 mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 04 LATCH-UP PERFORMANCE EXCEEDS 500mA (JESD 17) ESD PERFORMANCE: HBM > 2000V (MIL STD 883 method 3015); MM > 200V SOP TSSOP Table 1: Order Codes PACKAGE SOP TSSOP T&R 74LVCU04AMTR 74LVCU04ATTR DESCRIPTION The 74LVCU04A is a low voltage CMOS HEX INVERTER SINGLE STAGE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.65 to 3.6VCC operations and low power and low noise applications. It can be interfaced to 5V signal environment for inputs in mixed 3.3/5V system. It has more speed performance at 3.3V than 5V AC/ACT family, combined with a lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. Figure 1: Pin Connection And IEC Logic Symbols July 2004 Rev. 5 1/11 74LVCU04A Figure 2: Input And Output Equivalent Circuit Table 2: Pin Description PIN N° 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 SYMBOL 1A to 6A 1Y to 6Y GND VCC NAME AND FUNCTION Data Inputs Data Outputs Ground (0V) Positive Supply Voltage Table 3: Truth Table A L H Y H L Table 4: Absolute Maximum Ratings Symbol VCC VI VO VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage (VCC = 0V) DC Output Voltage (High or Low State) (note 1) DC Input Diode Current DC Output Diode Current (note 2) DC Output Current Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 50 - 50 ± 50 ± 100 -65 to +150 300 Unit V V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current per Supply Pin Storage Temperature Tstg TL Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) IO absolute maximum rating must be observed 2) VO < GND 2/11 7 4LVCU04A Table 5: Recommended Operating Conditions Symbol VCC VI VO VO IOH, IOL IOH, IOL IOH, IOL IOH, IOL Top dt/dv Supply Voltage (note 1) Input Voltage Output Voltage (VCC = 0V) Output Voltage (High or Low State) High or Low Level Output Current (VCC = 3.0 to 3.6V) High or Low Level Output Current (VCC = 2.7 to 3.0V) High or Low Level Output Current (VCC = 2.3 to 2.7V) High or Low Level Output Current (VCC = 1.65 to 2.3V) Operating Temperature Input Rise and Fall Time (note 2) Parameter Value 1.65 to 3.6 0 to 5.5 0 to 5.5 0 to VCC ± 24 ± 12 ±8 ±4 -55 to 125 0 to 10 Unit V V V V mA mA mA mA °C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V Table 6: DC Specifications Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 2.7 3.0 3.6 1.65 to 1.95 2.3 2.7 to 3.6 1.65 to 3.6 1.65 2.3 2.7 3.0 3.0 VOL Low Level Output Voltage 1.65 to 3.6 1.65 2.3 2.7 3.0 II Ioff ICC Input Leakage Current Power Off Leakage Current Quiescent Supply Current ICC incr. per Input 3.6 0 IO=-100 µA IO=-4 mA IO=-8 mA IO=-12 mA IO=-18 mA IO=-24 mA IO=100 µA IO=4 mA IO=8 mA IO=12 mA IO=24 mA VI = 0 to 5.5V VI or VO = 5.5V VI = VCC or GND 3.6 2.7 to 3.6 VI or VO = 3.6 to 5.5V VIH = VCC-0.6V -40 to 85 °C Min. 1.32 1.84 2.16 2.40 2.88 0.4 0.5 0.65 VCC-0.2 1.2 1.7 2.2 2.4 2.2 0.2 0.45 0.7 0.4 0.55 ±5 10 10 ± 10 500 VCC-0.2 1.2 1.7 2.2 2.4 2.2 0.2 0.45 0.7 0.4 0.55 ±5 10 10 ± 10 500 µA µA 3/11 µA µA V V Max. Value -55 to 125 °C Min. 1.32 1.84 2.16 2.40 2.88 0.4 0.5 0.65 Max. V Unit VIH High Level Input Voltage VIL Low Level Input Voltage High Level Output Voltage V VOH ∆ICC 74LVCU04A Table 7: Dynamic Switching Characteristics Test Condition Symbol Parameter VCC (V) 3.3 CL = 50pF VIL = 0V, VIH = 3.3V Value TA = 25 °C Min. Typ. 0.8 -0.8 Max. V Unit VOLP VOLV Dynamic Low Level Quiet Output (note 1) 1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining output is measured in the LOW state. Table 8: AC Electrical Characteristics Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 2.7 to 3.6 CL (pF) 30 30 50 50 RL (Ω ) 1000 500 500 500 ts = t r (ns) 2.0 2.0 2.5 2.5 -40 to 85 °C Min. Max. 7.5 6.0 4.7 4.2 1 Value -55 to 125 °C Min. Max. 10 8.0 5.6 5.0 1 Unit tPLH tPHL Propagation Delay Time ns 1 1 tOSLH tOSHL Output To Output Skew Time (note1, 2) ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = | tPLHm - tPLHn|, tOSHL = | tPHLm - tPHLn| 2) Parameter guaranteed by design Table 9: Capacitive Characteristics Test Condition Symbol Parameter VCC (V) Value TA = 25 °C Min. fIN = 10MHz Typ. 7 1.8 2.5 3.3 11 14 18 Max. pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/n (per circuit) 4/11 7 4LVCU04A Figure 3: Test Circuit RT = ZOUT of pulse generator (typically 50Ω) Table 10: Test Circuit And Waveform Symbol Value Symbol 1.65 to 1.95V CL RL VIH VM tr = tr 30pF 1000Ω VCC VCC/2
74LVCU04AMTR 价格&库存

很抱歉,暂时无法提供与“74LVCU04AMTR”相匹配的价格&库存,您可以联系我们找货

免费人工找货