74LVQ00M

® 74LVQ00 QUAD 2-INPUT NAND GATE s s s s s s s s s s s HIGH SPEED: tPD = 5.5 ns (TYP.) at VCC = 3.3V COMPATIBLE WITH TTL OUTPUTS LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC LOW NOISE: VOLP = 0.3 V (TYP.) at VCC = 3.3V 75Ω TRANSMISSION LINE DRIVING CAPABILITY SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 12 mA (MIN) PCI BUS LEVELS GUARANTEED AT 24mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 00 IMPROVED LATCH-UP IMMUNITY M (Micro Package) T (TSSOP Package) ORDER CODES : 74LVQ00M 74LVQ00T technology. It is ideal for low power and low noise 3.3V applications. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. It has better speed performance at 3.3V than 5V LS-TTL family combined with the true CMOS low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. DESCRIPTION The LVQ00 is a low voltage CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS PIN CONNECTION AND IEC LOGIC SYMBOLS February 1999 1/8 74LVQ00 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCT ION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y H H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 50 ± 200 -65 to +150 300 Unit V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time (VCC = 3V) (note 2) Parameter Supply Voltage (note 1) Valu e 2 to 3.6 0 to VCC 0 to VCC -40 to +85 0 to 10 Unit V V V o C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V 2/8 74LVQ00 DC SPECIFICATIONS Symb ol Parameter V CC (V) VIH VIL VOH High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Dynamic Output Current (note 1, 2) 3.0 to 3.6 3.0 VI = V IH or V IL VI(*) = VIH (* ) Test Co nditions Min. 2.0 T yp. Valu e T A = 25 oC Max. 0.8 -40 to 85 o C Min. 2.0 0.8 2.9 2.48 2.2 0.002 0 0.1 0.36 ±0.1 2 36 -25 0.1 0.44 0.55 ±1 20 2.99 Max. Un it V V V I O =-50 µ A IO=-12 mA IO=-24 mA IO=50 µA IO=12 mA IO=24 mA 2.9 2.58 VOL 3.0 V µA µA mA mA II ICC IOLD IOHD 3.6 3.6 3.6 VI = VCC or GND VI = VCC or GND VOLD = 0.8 V max VOHD = 2 V min 1) Maximum test duration 2ms, one output loaded attime 2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω. (*) All outputs loaded. DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 3.3 -0.8 3.3 3.3 C L = 50 pF 0.8 Test Co nditions Min. T yp. 0.3 -0.3 2 V Valu e T A = 25 oC Max. 0.8 -40 to 85 o C Min. Max. Un it 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. 3/8 74LVQ00 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf =3 ns) Symb ol Parameter V CC (V) tPLH tPHL tOSLH tOSHL Propagation Delay Time Output to Output Skew Time (note 1, 2) 2.7 3.3(*) 2.7 3.3(*) T est Con ditio n Valu e T A = 25 oC -40 to 85 o C Min. T yp. Max. Min. Max. 6.0 11.0 12.0 5.5 0.5 0.5 8.0 1.0 1.0 9.0 1.0 1.0 Un it ns ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = |tPLHm - tPLHn|, tOSHL = |tPHLm - tpHLn|) 2) Parameter guaranteed by design (*) Voltage range is 3.3V ± 0.3V CAPACITIVE CHARACTERISTICS Symb ol Parameter V CC (V) C IN CPD Input Capacitance Power Dissipation Capacitance (note 1) 3.3 3.3 fIN = 10 MHz Test Co nditions o Valu e -40 to 85 C T A = 25 C Min. T yp. Max. Min. Max. 4 22 o Un it pF pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4(per gate) 4/8 74LVQ00 TEST CIRCUIT CL = 50 pF or equivalent (includes jigand probe capacitance) RL = R1 = 500Ω orequivalent RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 5/8 74LVQ00 SO-14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 6/8 74LVQ00 TSSOP14 MECHANICAL DATA mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 4.9 6.25 4.3 5 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.20 5.1 6.5 4.48 0.002 0.335 0.0075 0.0035 0.193 0.246 0.169 0.197 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.201 0.256 0.176 DIM. A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 7/8 74LVQ00 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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