74LVQ20M

74LVQ20M

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    74LVQ20M - DUAL 4-INPUT NAND GATE - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
74LVQ20M 数据手册
74LVQ20 DUAL 4-INPUT NAND GATE s s s s s s s s s s s HIGH SPEED: tPD = 5.3 ns (TYP.) at VCC = 3.3 V COMPATIBLE WITH TTL OUTPUTS LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C LOW NOISE: VOLP = 0.3V (TYP.) at VCC = 3.3V 75Ω TRANSMISSION LINE DRIVING CAPABILITY SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 12mA (MIN) at VCC = 3.0 V PCI BUS LEVELS GUARANTEED AT 24 mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 3.6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 20 IMPROVED LATCH-UP IMMUNITY SOP TSSOP ORDER CODES PACKAGE SOP TSSOP TUBE 74LVQ20M T&R 74LVQ20MTR 74LVQ20TTR DESCRIPTION The 74LVQ20 is a low voltage CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/8 74LVQ20 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 9 2, 10 3, 11 4, 12 5, 13 6, 8 7 14 SYMBOL 1A to 2A 1B to 2B N.C. 1C to 2C 1D to 2D 1Y to 2Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Not Connected Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L X X X H X : Don’t Care B X L X X H C X X L X H D X X X L H Y H H H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 50 ± 300 -65 to +150 300 Unit V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Supply Voltage (note 1) Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 3.0V (note 2) Parameter Value 2 to 3.6 0 to VCC 0 to VCC -55 to 125 0 to 10 Unit V V V °C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V 2/8 74LVQ20 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) TA = 25°C Min. 2.0 0.8 IO=-50 µA 3.0 IO=-12 mA IO=-24 mA VOL Low Level Output Voltage IO=50 µA 3.0 IO=12 mA IO=24 mA II ICC IOLD IOHD Input Leakage Current Quiescent Supply Current Dynamic Output Current (note 1, 2) 3.6 3.6 3.6 VI = VCC or GND VI = VCC or GND VOLD = 0.8 V max VOHD = 2 V min ± 0.1 2 36 -25 0.002 0 0.1 0.36 2.9 2.58 2.99 2.9 2.48 2.2 0.1 0.44 0.55 ±1 20 25 -25 Typ. Max. Value -40 to 85°C Min. 2.0 0.8 2.9 2.48 2.2 0.1 0.44 0.55 ±1 20 µA µA mA mA V V Max. -55 to 125°C Min. 2.0 0.8 Max. V V Unit VIH VIL VOH High Level Input Voltage Low Level Input Voltage High Level Output Voltage 3.0 to 3.6 1) Maximum test duration 2ms, one output loaded at time 2) Incident wave switching is guaranteed on transmission lines with impedances as low as 75Ω DYNAMIC SWITCHING CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 3.3 3.3 CL = 50 pF 3.3 0.8 V TA = 25°C Min. Typ. 0.3 -0.8 2 -0.3 Max. 0.8 V V Value -40 to 85°C Min. Max. -55 to 125°C Min. Max. Unit VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. 3/8 74LVQ20 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) 2.7 3.3 2.7 (*) Value TA = 25°C Min. Typ. 6.0 5.3 0.5 0.5 Max. 10.0 8.0 1.0 1.0 -40 to 85°C Min. Max. 11.5 9.0 1.0 1.0 -55 to 125°C Min. Max. 13.0 10.5 1.0 1.0 ns Unit tPLH tPHL Propagation Delay Time tOSLH tOSHL Output To Output Skew Time (note1, 2) 3.3(*) ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = |tPLHm - tPLHn|, t OSHL = |tPHLm - t PHLn|) 2) Parameter guaranteed by design (*) Voltage range is 3.3V ± 0.3V CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 3.3 3.3 fIN = 10MHz TA = 25°C Min. Typ. 4 31 Max. Value -40 to 85°C Min. Max. -55 to 125°C Min. Max. pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x f IN + ICC/n (per circuit) TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 500Ω or equivalent RT = ZOUT of pulse generator (typically 50Ω) 4/8 74LVQ20 WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 5/8 74LVQ20 SO-14 MECHANICAL DATA DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 PO13G 6/8 74LVQ20 TSSOP14 MECHANICAL DATA mm. DIM. MIN. A A1 A2 b c D E E1 e K L 0° 0.45 0.60 0.05 0.8 0.19 0.09 4.9 6.2 4.3 5 6.4 4.4 0.65 BSC 8° 0.75 0° 0.018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 5.1 6.6 4.48 0.002 0.031 0.007 0.004 0.193 0.244 0.169 0.197 0.252 0.173 0.0256 BSC 8° 0.030 0.004 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.0089 0.201 0.260 0.176 inch A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 0080337D 7/8 74LVQ20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 8/8
74LVQ20M
物料型号: - 型号为74LVQ20,是一种低电压CMOS DUAL 4-INPUT NAND GATE。

器件简介: - 74LVQ20采用亚微米硅门和双层金属布线C²MOS技术制造,适用于低功耗和低噪声3.3V应用。

引脚分配: - 1, 9脚:1A到2A,数据输入。 - 2, 10脚:1B到2B,数据输入。 - 3, 11脚:N.C.,未连接。 - 4, 12脚:1C到2C,数据输入。 - 5, 13脚:1D到2D,数据输入。 - 6, 8脚:1Y到2Y,数据输出。 - 7脚:GND,地(0V)。 - 14脚:Vcc,正供电电压。

参数特性: - 工作电压范围:2V至3.6V。 - 低功耗:在25°C时,最大2μA。 - 高速:典型5.3ns的传播延迟。 - 低噪声:典型0.3V的输出电压。 - 对称输出阻抗:最小12mA。 - 兼容PCI总线电平:保证24mA。

功能详解: - 内部电路由3级缓冲输出组成,提供高噪声免疫和稳定输出。 - 所有输入和输出都配备有防静电放电保护电路,具有2KV ESD和瞬态过电压保护。

应用信息: - 适用于需要低功耗和低噪声的3.3V应用场合。
74LVQ20M 价格&库存

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