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74LVQ244M

74LVQ244M

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    74LVQ244M - LOW VOLTAGE OCTAL BUS BUFFER WITH 3 STATE OUTPUTS NON-INVERTED - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
74LVQ244M 数据手册
74LVQ244 LOW VOLTAGE OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON-INVERTED) s s s s s s s s s s s HIGH SPEED: tPD = 6 ns (TYP.) at VCC = 3.3V COMPATIBLE WITH TTL OUTPUT LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA = 25 oC LOW NOISE: VOLP = 0.4V (TYP.) at VCC = 3.3V 75Ω TRANSMISSION LINE OUTPUT DRIVE CAPABILITY SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 12 mA (MIN) PCI BUS LEVELS GUARANTEED AT 24mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 3.6V (1.2VData Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 244 IMPROVED LATCH-UP IMMUNITY M (Micro Package) T (TSSOP Package) ORDER CODES : 74LVQ244M 74LVQ244T technology. It is ideal for low power and low noise 3.3V applications. It has better speed performance at 3.3V than 5V LSTTL family combined with the true CMOS low power consumption. G output control governs four BUS BUFFERs. This device is designed to be used with 3 state memory address drivers, etc. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. DESCRIPTION The LVQ244 is a low voltage CMOS OCTAL BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS PIN CONNECTION AND IEC LOGIC SYMBOLS February 1999 1/8 74LVQ244 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2, 4,6, 8 9, 7,5, 3 11, 13, 15, 17 18, 16, 14, 12 19 10 20 SYMBOL 1G 1A1 to 1A4 2Y1 to 2Y4 2A1 to 2A4 1Y1 to 1Y4 2G GND VCC NAME AND FUNCT ION Output Enable Input Data Inputs Data Outputs Data Inputs Data Outputs Output Enable Input Ground (0V) Positive Supply Voltage TRUTH TABLE INPUT G L L H X:”H” or ”L” Z: High impedance OUTPUT An L H X Yn L H Z ABSOLUTE MAXIMUM RATING Symbol VCC VI VO IIK IOK IO ICC orIGND Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current DC VCC or Ground Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 50 ± 400 -65 to +150 300 Unit V V V mA mA mA mA o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time (VCC = 3V) (note 2) Parameter Supply Voltage (note 1) Valu e 2 to 3.6 0 to VCC 0 to VCC -40 to +85 0 to 10 Unit V V V o C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V 2/8 74LVQ244 DC SPECIFICATIONS Symb ol Parameter V CC (V) VIH VIL VOH High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 3 State Output Leakage Current Quiescent Supply Current Dynamic Output Current (note 1, 2) 3.0 to 3.6 3.0 VI(*) = VIH or VIL 3.0 VI(*) = VIH or VIL IO=-50 µA IO=-12 mA IO=-24 mA IO=50 µA IO=12 mA IO=24 mA ±0.1 ±0.5 4 36 -25 0.002 0 0.1 0.36 Test Co nditions Min. 2.0 0.8 2.9 2.58 2.99 2.9 2.48 2.2 0.1 0.44 0.55 ±1 ±5 40 µA µA µA mA mA V V T yp. Valu e T A = 25 oC Max. -40 to 85 o C Min. 2.0 0.8 Max. V V Un it VOL II IOZ ICC IOLD IOHD 3.6 3.6 3.6 3.6 VI = VCC orGND VI = VIH orVIL VO = VCC orGND VI = VCC orGND VOLD = 0.8 V max VOHD = 2 V min 1) Maximum test duration 2ms, one output loaded attime 2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω. (*) All outputs loaded. DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 3.3 -0.8 3.3 3.3 CL = 50 pF 0.8 Test Co nditions Min. T yp. 0.4 -0.5 2 V Valu e T A = 25 oC Max. 0.8 -40 to 85 o C Min. Max. Un it 1) Worst case package 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n -1) outputs switching and one output at GND 3) max number of data inputs (n) switching. (n-1) switching 0V to3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD). f=1MHz 3/8 74LVQ244 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf =3 ns) Symb ol Parameter V CC (V) tPLH tPHL tPZL tPZH tPLZ tPHZ tOSLH tOSHL Propagation Delay Time Output Enable Time Output Disable Time Output to Output Skew Time (note 1, 2) 2.7 3.3(*) 2.7 3.3(*) 2.7 3.3(*) 2.7 3.3(*) T est Con ditio n Valu e T A = 25 oC -40 to 85 o C Min. T yp. 7 6 8.5 7 9 7.5 0.5 0.5 Max. 13 9 17 12 19 13.5 1.5 1.5 Min. Max. 14 9.5 18 12.5 20 14 1.5 1.5 Un it ns ns ns ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = |tPLHm - tPLHn|, tOSHL = |tPHLm - tpHLn|) 2) Parameter guaranteed by design (*) Voltage range is 3.3V ± 0.3V CAPACITIVE CHARACTERISTICS Symb ol Parameter V CC (V) CIN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) 3.3 3.3 3.3 fIN = 10 MHz Test Co nditions Min. T yp. 5 10 15 Valu e T A = 25 oC Max. -40 to 85 o C Min. Max. pF pF pF Un it 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/8(per circuit) TEST CIRCUIT T EST tPLH , tPHL tPZL , tPLZ tPZH , tPHZ CL = 50 pF or equivalent (includes jigand probe capacitance) RL = R1 = 500Ω orequivalent RT = ZOUT of pulse generator (typically 50Ω) SW IT CH Open 2VCC OPEN 4/8 74LVQ244 WAVEFORM 1: PROPAGATION DELAYS (f=1MHz; 50% duty cicle) WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cicle) 5/8 74LVQ244 SO-20 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F L M S 7.40 0.50 12.60 10.00 1.27 11.43 7.60 1.27 0.75 8 (max.) 0.291 0.19 13.00 10.65 0.35 0.23 0.50 45 (typ.) 0.496 0.393 0.050 0.450 0.299 0.050 0.029 0.512 0.419 0.10 mm TYP. MAX. 2.65 0.20 2.45 0.49 0.32 0.013 0.009 0.020 0.004 MIN. inch TYP. MAX. 0.104 0.007 0.096 0.019 0.012 P013L 6/8 74LVQ244 TSSOP20 MECHANICAL DATA mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 6.4 6.25 4.3 6.5 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.2 6.6 6.5 4.48 0.002 0.335 0.0075 0.0035 0.252 0.246 0.169 0.256 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.260 0.256 0.176 DIM. A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 7/8 74LVQ244 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 8/8
74LVQ244M
1. 物料型号:74LVQ244,低电压八路总线缓冲器,带有三态输出(非反相)。

2. 器件简介: - 74LVQ244是一种低电压CMOS八路总线缓冲器,采用亚微米硅栅和双层金属布线CMOS技术制造,适用于3.3V低功耗和低噪声应用。 - 该器件在3.3V下的速度性能优于5V LSTTL系列,并结合了真正的CMOS低功耗特性。 - 设计用于与三态存储器地址驱动器等一起使用。 - 所有输入和输出都配备了防静电放电保护电路,具有2KV ESD免疫能力和瞬态过电压保护。

3. 引脚分配: - 1G:输出使能输入 - 1A1至1A4:数据输入 - 2Y1至2Y4:数据输出 - 2A1至2A4:数据输入 - 1Y1至1Y4:数据输出 - 2G:输出使能输入 - GND:地(0V) - Vcc:正电源电压

4. 参数特性: - 工作电压范围:2V至3.6V(1.2V数据保持) - 传播延迟:tPLH ≅ tPHL - 低功耗:ICC = 4 µA(最大值)在25°C时 - 高速:tPD = 6 ns(典型值)在3.3V电源下 - 低噪声:VOLP = 0.4V(典型值)在3.3V电源下

5. 功能详解: - G输出控制管理四个总线缓冲器。 - 该设备设计用于与三态存储器地址驱动器等一起使用。

6. 应用信息: - 适用于低功耗和低噪声的3.3V应用。

7. 封装信息: - 74LVQ244M:微封装 - 74LVQ244T:TSSOP封装
74LVQ244M 价格&库存

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