74LVQ573T

74LVQ573T

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    74LVQ573T - OCTAL D-TYPE LATCH WITH 3 STATE OUTPUTS NON INVERTING - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
74LVQ573T 数据手册
® 74LVQ573 OCTAL D-TYPE LATCH WITH 3 STATE OUTPUTS NON INVERTING s s s s s s s s s s s HIGH SPEED: tPD = 5 ns (TYP.) at VCC = 3.3V COMPATIBLE WITH TTL OUTPUTS LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA = 25 oC LOW NOISE: VOLP = 0.5 V (TYP.) at VCC = 3.3V 75Ω TRANSMISSION LINE DRIVING CAPABILITY SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24 mA (MIN) PCI BUS LEVELS GUARANTEED AT 24mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 573 IMPROVED LATCH-UP IMMUNITY M (Micro Package) T (TSSOP Package) ORDER CODES : 74LVQ573M 74LVQ573T input (OE). While the LE input is held at a high level, the Q outputs will follow the data input precisely. When the LE is taken low, the Q outputs will be latched precisely at the logic level of D input data. While the (OE) input is low, the 8 outputs will be in a normal logic state (high or low logic level) and while high level the outputs will be in a high impedance state. It has better speed performance at 3.3V than 5V LSTTL family combined with the true CMOS low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. DESCRIPTION The LVQ573 is a low voltage CMOS OCTAL D-TYPE LATCH with 3 STATE OUTPUT NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications. These 8 bit D-Type flip-flops are controlled by a latch enable input (LE) and an output enable PIN CONNECTION AND IEC LOGIC SYMBOLS February 1999 1/10 74LVQ573 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2, 3, 4, 5, 6, 7, 8, 9 12, 13, 14, 15, 16, 17, 18, 19 11 10 20 SYMBOL OE D0 to D7 NAME AND FUNCT ION 3 State Output Enable Input (Active LOW) Data Inputs Q0 to Q7 3 State Latch Outputs LE GND VCC Latch Enable Input Ground (0V) Positive Supply Voltage TRUTH TABLE INPUTS OE H L L L LE X L H H D X X L H OUT PUTS Q Z NO CHANGE * L H X:Don’t care Z: High impedance * Q outputs are latched atthe time when the LEinput Is taken low logic level. LOGIC DIAGRAM 2/10 74LVQ573 ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 50 ± 400 -65 to +150 300 Unit V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time (VCC = 3V) (note 2) Parameter Supply Voltage (note 1) Valu e 2 to 3.6 0 to VCC 0 to VCC -40 to +85 0 to 10 Unit V V V o C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V 3/10 74LVQ573 DC SPECIFICATIONS Symb ol Parameter V CC (V) VIH VIL VOH High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 3 State Output Leakage Current Quiescent Supply Current Dynamic Output Current (note 1, 2) 3.0 to 3.6 3.0 VI = V IH or V IL VI(*) = VIH or VIL (* ) Test Co nditions o Valu e T A = 25 C Min. 2.0 0.8 T yp. Max. -40 to 85 C Min. 2.0 0.8 2.9 2.48 2.2 0.002 0 0.1 0.36 ±0.1 ± 0.25 4 36 -25 0.1 0.44 0.55 ±1 ±2.5 40 2.99 Max. o Un it V V V I O =-50 µ A IO=-12 mA IO=-24 mA IO=50 µA IO=12 mA IO=24 mA 2.9 2.58 VOL 3.0 V µA µA µA mA mA II IOZ ICC IOLD IOHD 3.6 3.6 3.6 3.6 VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND VOLD = 0.8 V max VOHD = 2 V min 1) Maximum test duration 2ms, one output loaded attime 2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω. (*) All outputs loaded. DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 3.3 -0.8 3.3 3.3 C L = 50 pF 0.8 Test Co nditions o Valu e T A = 25 C Min. T yp. 0.5 -0.6 2 Max. 0.8 -40 to 85 C Min. Max. o Un it V 1) Worst case package 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n -1) outputs switching and one output at GND 3) max number of data inputs (n) switching. (n-1) switching 0V to3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD). f=1MHz 4/10 74LVQ573 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf =3 ns) Symb ol Parameter V CC (V) tPLH tPHL tPLH tPHL tPLZ tPHZ tPZL tPZH tw tsL tsH thL thH tOSLZ tOSHL Propagation Delay Time LE to Q Propagation Delay Time D to Q Output Disable Time Output Enable Time LE pulse Width, HIGH Setup Time D to LE HIGH or LOW Hold Time D to LE, HIGH or LOW Output to Output Skew Time (note 1, 2) 2.7 3.3(*) 2.7 3.3 (*) T est Con ditio n o Valu e -40 to 85 C T A = 25 C Min. T yp. Max. Min. Max. 8.0 6.5 7.5 6.0 8.5 7.0 9.0 7.0 2.0 1.5 0.0 0.0 0.0 0.0 0.5 0.5 17.0 11.0 15.0 10.0 20.0 14.0 18.0 12.0 5.0 4.0 2.5 2.0 2.5 2.0 1.0 1.0 18.0 12.0 16.0 11.0 21.0 15.0 19.0 13.0 6.0 4.0 3.0 2.5 3.0 2.5 1.5 1.5 o Un it ns ns ns ns ns ns ns ns 2.7 3.3(*) 2.7 3.3(*) 2.7 3.3 2.7 3.3(*) 2.7 3.3(*) 2.7 3.3(*) (*) 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = |tPLHm - tPLHn|, tOSHL = |tPHLm - tpHLn|) 2) Parameter guaranteed by design (*) Voltage range is 3.3V ± 0.3V CAPACITIVE CHARACTERISTICS Symb ol Parameter V CC (V) C IN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) 3.3 3.3 3.3 fIN = 10 MHz Test Co nditions Min. T yp. 4 10 10 Valu e T A = 25 oC Max. -40 to 85 o C Min. Max. pF pF pF Un it 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC •fIN + ICC/* (per Latch) 5/10 74LVQ573 TEST CIRCUIT T EST tPLH , tPHL tPZL , tPLZ tPZH , tPHZ CL = 50 pF or equivalent (includes jigand probe capacitance) RL = R1 = 500Ω orequivalent RT = ZOUT of pulse generator (typically 50Ω) SW IT CH Open 2VCC Open WAVEFORM 1: LE TO Qn PROPAGATION DELAYS, LE MINIMUM PULSE WIDTH, Dn TO LE SETUP AND HOLD TIMES (f=1MHz; 50% duty cycle) 6/10 74LVQ573 WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle) WAVEFORM 3: Dn TO Qn PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle) 7/10 74LVQ573 SO-20 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F L M S 7.40 0.50 12.60 10.00 1.27 11.43 7.60 1.27 0.75 8 (max.) 0.291 0.19 13.00 10.65 0.35 0.23 0.50 45 (typ.) 0.496 0.393 0.050 0.450 0.299 0.050 0.029 0.512 0.419 0.10 mm TYP. MAX. 2.65 0.20 2.45 0.49 0.32 0.013 0.009 0.020 0.004 MIN. inch TYP. MAX. 0.104 0.007 0.096 0.019 0.012 P013L 8/10 74LVQ573 TSSOP20 MECHANICAL DATA mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 6.4 6.25 4.3 6.5 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.2 6.6 6.5 4.48 0.002 0.335 0.0075 0.0035 0.252 0.246 0.169 0.256 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.260 0.256 0.176 DIM. A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 9/10 74LVQ573 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 10/10
74LVQ573T
物料型号: - 74LVQ573M(Micro Package) - 74LVQ573T(TSSOP Package)

器件简介: 74LVQ573是一款低电压CMOS八位D型锁存器,具有三态输出非反相,采用亚微米硅门和双层金属连线C2MOS技术制造,适用于3.3V低功耗和低噪声应用。

引脚分配: - 1: OE(3 State Output Enable Input,低电平有效) - 2至9: D0至D7(数据输入) - 11: LE(Latch Enable Input) - 10: GND(地) - 12至19: Q0至Q7(三态锁存输出) - 20: Vcc(正电源电压)

参数特性: - 高速:tPD = 5ns(典型值,3.3V供电) - 低功耗:ICC = 4µA(最大值,25°C环境温度) - 低噪声:VOLP = 0.5V(典型值,3.3V供电) - 75Ω传输线驱动能力,对称输出阻抗 - 工作电压范围:VCC(OPR)= 2V至3.6V(1.2V数据保持)

功能详解: - 8位D型触发器由锁存使能输入(LE)和输出使能输入(OE)控制。 - 当LE输入为高电平时,Q输出将精确跟随数据输入。 - 当LE输入为低电平时,Q输出将在D输入数据的逻辑电平被精确锁存。 - 当OE输入为低电平时,8个输出将处于正常逻辑状态;当OE为高电平时,输出将处于高阻状态。

应用信息: - 该器件适用于低功耗和低噪声的3.3V应用场合,所有输入和输出均配备有防静电保护电路,具有2KV ESD免疫能力和瞬态过电压保护。

封装信息: - SO-20和TSSOP20两种封装方式,具体尺寸和机械数据在文档中有详细描述。
74LVQ573T 价格&库存

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