74LVQ86M

74LVQ86M

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    74LVQ86M - QUAD EXCLUSIVE OR GATE - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
74LVQ86M 数据手册
® 74LVQ86 QUAD EXCLUSIVE OR GATE s s s s s s s s s s s HIGH SPEED: tPD = 5.5 ns (TYP.) at VCC = 3.3V COMPATIBLE WITH TTL OUTPUTS LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC LOW NOISE: VOLP = 0.3 V (TYP.) at VCC = 3.3V 75Ω TRANSMISSION LINE DRIVING CAPABILITY SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 12 mA (MIN) PCI BUS LEVELS GUARANTEED AT 24mA BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 86 IMPROVED LATCH-UP IMMUNITY M (Micro Package) T (TSSOP Package) ORDER CODES : 74LVQ86M 74LVQ86T sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications. It has better speed performance at 3.3V than 5V LS-TTL family combined with the true CMOS low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. DESCRIPTION The LVQ86 is a low voltage CMOS QUAD EXCLUSIVE OR GATE fabricated with PIN CONNECTION AND IEC LOGIC SYMBOLS February 1999 1/8 74LVQ86 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCT ION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y L H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 50 ± 200 -65 to +150 300 Unit V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time (VCC = 3V) (note 2) Parameter Supply Voltage (note 1) Valu e 2 to 3.6 0 to VCC 0 to VCC -40 to +85 0 to 10 Unit V V V o C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V 2/8 74LVQ86 DC SPECIFICATIONS Symb ol Parameter V CC (V) VIH VIL VOH High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Dynamic Output Current (note 1, 2) 3.0 to 3.6 3.0 VI = V IH or V IL VI(*) = VIH or VIL (* ) Test Co nditions o Valu e T A = 25 C Min. 2.0 0.8 T yp. Max. -40 to 85 C Min. 2.0 0.8 2.9 2.48 2.2 0.002 0 0.1 0.36 ±0.1 2 36 -25 0.1 0.44 0.55 ±1 20 2.99 Max. o Un it V V V I O =-50 µ A IO=-12 mA IO=-24 mA IO=50 µA IO=12 mA IO=24 mA 2.9 2.58 VOL 3.0 V µA µA mA mA II ICC IOLD IOHD 3.6 3.6 3.6 VI = VCC or GND VI = VCC or GND VOLD = 0.8 V max VOHD = 2 V min 1) Maximum test duration 2ms, one output loaded attime 2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω. (*) All outputs loaded. DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 3.3 -0.8 3.3 3.3 C L = 50 pF 0.8 Test Co nditions Min. T yp. 0.3 -0.3 2 V Valu e T A = 25 oC Max. 0.8 -40 to 85 o C Min. Max. Un it 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to3.3V. Inputs under test switching: 3.3V to threshold (VILD), 0V to threshold (VIHD).,f=1MHz. 3/8 74LVQ86 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf =3 ns) Symb ol Parameter V CC (V) tPLH tPHL tOSLH tOSHL Propagation Delay Time Output to Output Skew Time (note 1, 2) 2.7 3.3(*) 2.7 3.3 (*) T est Con ditio n o Valu e -40 to 85 C T A = 25 C Min. T yp. Max. Min. Max. 6.5 5.5 0.5 0.5 16.0 11.0 1.5 1.5 18.0 12.0 1.5 1.5 o Un it ns ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = |tPLHm - tPLHn|, tOSHL = |tPHLm - tpHLn|) 2) Parameter guaranteed by design (*) Voltage range is 3.3V ± 0.3V CAPACITIVE CHARACTERISTICS Symb ol Parameter V CC (V) C IN CPD Input Capacitance Power Dissipation Capacitance (note 1) 3.3 3.3 fIN = 10 MHz Test Co nditions Min. T yp. 4 23 Valu e T A = 25 oC Max. -40 to 85 o C Min. Max. pF pF Un it 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC •fIN + ICC/4(per gate) 4/8 74LVQ86 TEST CIRCUIT CL = 50 pF or equivalent (includes jigand probe capacitance) RL = R1 = 500Ω orequivalent RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 5/8 74LVQ86 SO-14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 6/8 74LVQ86 TSSOP14 MECHANICAL DATA mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 4.9 6.25 4.3 5 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.20 5.1 6.5 4.48 0.002 0.335 0.0075 0.0035 0.193 0.246 0.169 0.197 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.201 0.256 0.176 DIM. A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 7/8 74LVQ86 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 8/8
74LVQ86M
物料型号: - 型号为74LVQ86。

器件简介: - 74LVQ86是一款低电压CMOS四异或门,采用亚微米硅栅和双层金属连线C2MOS技术制造,适用于低功耗和低噪声的3.3V应用场合。与5V LS-TTL系列相比,在3.3V下有更好的速度性能,并且具有真正的CMOS低功耗特性。所有输入和输出都配备了防静电放电保护电路,具有2KV ESD保护和瞬态过电压保护。

引脚分配: - 1, 4, 9, 12:1A至4A,数据输入。 - 2, 5, 10, 13:1B至4B,数据输入。 - 3, 6, 8, 11:1Y至4Y,数据输出。 - 7:GND,地(0V)。 - 14:Vcc,正供电电压。

参数特性: - 高速:tPD = 5.5 ns(典型值)在Vcc = 3.3V时。 - 低功耗:Icc = 2μA(最大值)在Ta = 25°C时。 - 低噪声:VOLP = 0.3V(典型值)在Vcc = 3.3V时。 - 75欧姆传输线驱动能力。 - 对称输出阻抗:|IOH| = |IOL| = 12 mA(最小值)。 - 74LVQ86T:PCI总线电平保证在24mA平衡传播延迟:tPLH ≅ tPHL。 - 工作电压范围:Vcc(OPR) = 2V至3.6V(1.2V数据保持)。 - 引脚和功能与74系列86兼容。 - 提高了抗锁能力。

功能详解: - 74LVQ86是四异或门,其逻辑功能是当两个输入端的电平不同时输出高电平,否则输出低电平。

应用信息: - 适用于需要低功耗和低噪声的3.3V应用场合,例如计算机、通信设备等。

封装信息: - 74LVQ86M M T(微型封装)(TSSOP封装)。
74LVQ86M 价格&库存

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