74LX1G03

74LX1G03 SINGLE 2-INPUT OPEN DRAIN NAND GATE s s s s s s 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.2ns (MAX.) at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 5.5V (1.2V Data Retention) IMPROVED LATCH-UP IMMUNITY SOT23-5L SOT323-5L ORDER CODES PACKAGE SOT23-5L SOT323-5L T&R 74LX1G03STR 74LX1G03CTR DESCRIPTION The 74LX1G03 is a low voltage CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. The device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge. PIN CONNECTION AND IEC LOGIC SYMBOLS April 2004 1/10 74LX1G03 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° 1 2 4 3 5 SYMBOL 1A 1B 1Y GND VCC NAME AND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H Z: High Impedance B L H L H Y Z Z Z L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage (VCC = 0V) DC Output Voltage (High or Low State) (note 1) DC Input Diode Current DC Output Diode Current (note 2) DC Output Current Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 50 - 50 ± 50 ± 50 -65 to +150 300 Unit V V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current per Supply Pin Storage Temperature Tstg TL Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) IO absolute maximum rating must be observed 2) VO < GND, VO > VCC 2/10 74LX1G03 RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO VO IOL IOL IOL IOL IOL Top dt/dv Supply Voltage (note 1) Input Voltage Output Voltage (VCC = 0V) Output Voltage (High or Low State) High or Low Level Output Current (VCC = 4.5 to 5.5V) High or Low Level Output Current (VCC = 3.0 to 3.6V) High or Low Level Output Current (VCC = 2.7 to 3.0V) High or Low Level Output Current (VCC = 2.3 to 2.7V) High or Low Level Output Current (VCC = 1.65 to 2.3V) Operating Temperature Input Rise and Fall Time (note 2) Parameter Value 1.65 to 5.5 0 to 5.5 0 to 5.5 0 to VCC + 32 + 24 + 12 +8 +4 -55 to 125 0 to 10 Unit V V V V mA mA mA mA mA °C ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 3.0 to 5.5 VIL Low Level Input Voltage 1.65 to 1.95 2.3 to 2.7 3.0 to 5.5 VOL Low Level Output Voltage 1.65 to 4.5 1.65 2.3 3.0 4.5 IOZ High Impedance Output Leakage Current Input Leakage Current Power Off Leakage Current Quiescent Supply Current 3.6 1.65 to 5.5 0 1.65 to 5.5 3.6 IO=100 µA IO=4 mA IO=8 mA IO=16 mA IO=24 mA IO=32 mA VI = 0 to 5.5V VI = 0 to 5.5V VI or VO = 5.5V VI = VCC or GND VI or VO = 3.6 to 5.5V -40 to 85 °C Min. 0.75VCC 0.7VCC 0.7VCC 0.25VCC 0.3VCC 0.3VCC 0.1 0.45 0.3 0.4 0.55 0.55 ± 10 ± 10 10 10 ± 10 Max. Value -55 to 125 °C Min. 0.75VCC 0.7VCC 0.7VCC 0.25VCC 0.3VCC 0.3VCC 0.1 0.45 0.3 0.4 0.55 0.55 ± 10 ± 10 10 10 ± 10 µA µA µA µA V V V Max. Unit VIH High Level Input Voltage II Ioff ICC 3/10 74LX1G03 AC ELECTRICAL CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 CL (pF) 30 30 50 50 50 30 30 50 50 50 RL (Ω ) 1000 500 500 500 500 1000 500 500 500 500 ts = tr (ns) 2.0 2.0 2.5 2.5 2.5 2.0 2.0 2.5 2.5 2.5 -40 to 85 °C Min. 2.4 1.0 1.0 1.5 1 2.4 1.0 1.0 1.5 1 Max. 8.3 5.5 5.5 4.2 3.5 8.3 5.5 5.5 4.2 3.5 Value -55 to 125 °C Min. 2.4 1.0 1.0 1.5 1 2.4 1.0 1.0 1.5 1 Max. 8.3 5.5 5.5 4.2 3.5 8.3 5.5 5.5 4.2 3.5 Unit tPLZ Propagation Delay Time ns tPZL Propagation Delay Time ns CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) VIN = 0 or VCC VIN = 0 or VCC 1.8 2.5 3.3 fIN = 10MHz Value TA = 25 °C Min. Typ. 4 5 21 24 26 10 Max. pF pF pF Unit CIN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC 4/10 74LX1G03 TEST CIRCUIT RT = ZOUT of pulse generator (typically 50Ω) TEST CIRCUIT AND WAVEFORM SYMBOL VALUE Symbol 1.65 to 1.95V CL RL= R1 VIH VM tr = tr 30pF/50pF 1000Ω VCC VCC/2