74LX1G04BJR

74LX1G04 LOW VOLTAGE CMOS SINGLE INVERTER WITH 5V TOLERANT INPUT ■ ■ ■ ■ ■ ■ ■ ■ 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.2ns (MAX.) at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 5.5V (1.2V Data Retention) IMPROVED LATCH-UP IMMUNITY DESCRIPTION The 74LX1G04 is a low voltage CMOS SINGLE INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.65 to 5.5 VCC operations and low power and low noise applications. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on input and output and 0 to 7V can be accepted on inputs with SOT23-5 SOT323-5 Flip-Chip4 ORDER CODES PACKAGE T&R SOT23-5L SOT323-5L Flip-Chip 74LX1G04STR 74LX1G04CTR 74LX1G04BJR no regard to the supply voltage. It can be interfaced to 5V signal environment for inputs in mixed 3.3/5V system. All inputs and outputs are equipped with protection circuits against static discharge. PIN CONNECTION AND IEC LOGIC SYMBOLS (top view for SOT, top through view for Flip-Chip) April 2004 1/13 74LX1G04 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN for SOT PIN for Flip-Chip SYMBOL 1 2 4 3 1 3 2 5 4 N.C. 1A 1Y GND VCC NAME AND FUNCTION Not connected Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A Y L H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Value Unit Supply Voltage -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage (VCC = 0V) -0.5 to +7.0 V VO DC Output Voltage (High or Low State) (note 1) IIK DC Input Diode Current IOK IO -0.5 to VCC + 0.5 V - 50 mA DC Output Diode Current (note 2) - 50 mA DC Output Current ± 50 mA ICC or IGND DC VCC or Ground Current per Supply Pin Tstg Storage Temperature TL Lead Temperature (10 sec) ± 50 mA -65 to +150 °C 260 °C Absolute Maximum Rating are those value beyond which damage to the device may occur. Functional operation under these condition is not implied 1) IO absolute maximum rating must be observed 2) VO < GND 2/13 74LX1G04 RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Value Supply Voltage (note 1) Unit 1.65 to 5.5 V 0 to 5.5 V Output Voltage (VCC = 0V) 0 to 5.5 V Output Voltage (High or Low State) 0 to VCC V VI Input Voltage VO VO IOH, IOL High or Low Level Output Current (VCC = 4.5 to 5.5V) ± 32 mA IOH, IOL High or Low Level Output Current (VCC = 3.0 to 3.6V) ± 24 mA IOH, IOL High or Low Level Output Current (VCC = 2.7 to 3.0V) ± 16 mA IOH, IOL High or Low Level Output Current (VCC = 2.3 to 2.7V) ±8 mA IOH, IOL High or Low Level Output Current (VCC = 1.65 to 2.3V) Top dt/dv Operating Temperature Input Rise and Fall Time (note 2) ±4 mA -55 to 125 °C 0 to 10 ns/V 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V DC SPECIFICATION Test Condition Symbol VIH VIL Parameter High Level Input Voltage Value -40 to 85 °C Min. 1.65 to 1.95 0.75VCC 0.75VCC 2.3 to 2.7 0.7VCC 0.7VCC 3.0 to 5.5 0.7VCC 0.7VCC Ioff ICC V 0.25VCC 2.3 to 2.7 0.3VCC 0.3VCC High Level Output Voltage 1.65 to 4.5 Low Level Output Voltage Input Leakage Current Power Off Leakage Current Quiescent Supply Current Unit Max. 0.25VCC V 0.3VCC 0.3VCC IO=-100 µA VCC-0.1 VCC-0.1 1.65 IO=-4 mA 1.2 1.2 2.3 IO=-8 mA 1.9 1.9 IO=-16 mA 2.4 2.4 IO=-24 mA 2.2 2.2 4.5 IO=-32 mA 3.8 1.65 to 4.5 IO=100 µA 0.1 0.1 1.65 IO=4 mA 0.45 0.45 2.3 IO=8 mA 0.3 0.3 IO=16 mA 0.4 0.4 IO=24 mA 0.55 0.55 4.5 IO=32 mA 0.55 0.55 1.65 to 5.5 VI = 0 to 5.5V ± 10 ± 10 µA 0 VI or VO = 5.5V 10 10 µA 1.65 to 5.5 VI = VCC or GND 10 10 µA 3.0 II Min. 1.65 to 1.95 3.0 VOL Max. Low Level Input Voltage 3.0 to 5.5 VOH -55 to 125 °C VCC (V) V 3.8 V 3/13 74LX1G04 AC ELECTRICAL CHARACTERISTICS Test Condition Symbol tPLH tPHL Parameter Propagation Delay Time VCC (V) 1.65 to 1.95 2.3 to 2.7 3.0 to 3.6 4.5 to 5.5 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 CL (pF) RL (Ω) Value ts = tr (ns) 15 1MΩ 2.0 30 30 50 50 50 1000 500 500 500 500 2.0 2.0 2.5 2.5 2.5 -40 to 85 °C -55 to 125 °C Min. Max. Min. Max. 2 2 1 1 2 2 1 1 1 9.5 6.5 5.5 4.1 10.5 7.5 6.1 5.5 4.2 2 2 1 1 2 2 1 1 1 10.5 7.6 6.5 5.5 11.5 8.5 7.1 6.5 5.2 Unit ns CAPACITANCE CHARACTERISTICS Test Condition Symbol Parameter CIN Input Capacitance CPD Power Dissipation Capacitance (note 1) TA = 25 °C VCC (V) Min. 0 1.8 2.5 3.3 Value fIN = 10MHz Typ. Unit Max. 4 pF 36.8 37 38 pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC 4/13 74LX1G04 TEST CIRCUIT RT = ZOUT of pulse generator (typically 50Ω) TEST CIRCUIT AND WAVEFORM SYMBOL VALUE VCC Symbol 1.65 to 1.95V 2.3 to 2.7V 2.7 to 5.5V CL 15pF/30pF 15pF/30pF 15pF/50pF RL 1MΩ/1000Ω 500Ω 500Ω VIH VCC VCC VCC VM VCC/2 VCC/2 VCC/2 tr = tr