74LX1G132

74LX1G132 SINGLE 2-INPUT SCHMITT NAND GATE s s s s s s s s s 5V TOLERANT INPUTS HIGH SPEED: tPD = 5.5ns (MAX.) at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C TYPICAL HYSTERESIS: Vh=1V at VCC=4.5V POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 5.5V (1.2V Data Retention) IMPROVED LATCH-UP IMMUNITY SOT23-5L SOT323-5L ORDER CODES PACKAGE SOT23-5L SOT323-5L T&R 74LX1G132STR 74LX1G132CTR DESCRIPTION The 74LX1G132 is a low voltage CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. This together with its schmitt trigger function allows it to be used on line receivers with slow rise/fall input signals. All inputs and outputs are equipped with protection circuits against static discharge. PIN CONNECTION AND IEC LOGIC SYMBOLS April 2004 1/11 74LX1G132 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° 1 2 4 3 5 SYMBOL 1A 1B 1Y GND VCC NAME AND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y H H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage (VCC = 0V) DC Output Voltage (High or Low State) (note 1) DC Input Diode Current DC Output Diode Current (note 2) DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 50 - 50 ± 50 ± 50 -65 to +150 300 Unit V V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current per Supply Pin Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. 1) IO maximum rating must be observed 2) VO < GND, VO > VCC 2/11 74LX1G132 RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO VO IOH, IOL IOH, IOL IOH, IOL IOH, IOL IOH, IOL Top Supply Voltage (note 1) Input Voltage Output Voltage (VCC = 0V) Output Voltage (High or Low State) High or Low Level Output Current (VCC = 4.5 to 5.5V) High or Low Level Output Current (VCC = 3.0 to 3.6V) High or Low Level Output Current (VCC = 2.7 to 3.0V) High or Low Level Output Current (VCC = 2.3 to 2.7V) High or Low Level Output Current (VCC = 1.65 to 2.3V) Operating Temperature Parameter Value 1.65 to 5.5 0 to 5.5 0 to 5.5 0 to VCC ± 32 ± 24 ± 12 ±8 ±4 -55 to 125 Unit V V V V mA mA mA mA mA °C 1) Truth Table guaranteed: 1.2V to 3.6V 3/11 74LX1G132 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 1.65 2.3 3 4.5 5.5 1.65 2.3 3 4.5 5.5 1.65 2.3 3 4.5 5.5 1.65 to 4.5 1.65 2.3 3.0 4.5 VOL Low Level Output Voltage 1.65 to 4.5 1.65 2.3 3.0 4.5 II Ioff ICC Input Leakage Current Power Off Leakage Current Quiescent Supply Current 1.65 to 5.5 0 1.65 to 5.5 IO=-100 µA IO=-4 mA IO=-8 mA IO=-16 mA IO=-24 mA IO=-32 mA IO=100 µA IO=4 mA IO=8 mA IO=16 mA IO=24 mA IO=32 mA VI = 0 to 5.5V VI or VO = 5.5V VI = VCC or GND -40 to 85 °C Min. 0.79 1.11 1.5 2.16 2.61 0.39 0.58 0.84 1.41 1.87 0.37 0.48 0.56 0.71 0.71 VCC-0.1 1.2 1.9 2.4 2.2 3.8 0.1 0.45 0.3 0.4 0.55 0.55 ± 10 10 10 Max. 1.16 1.56 1.87 2.74 3.33 0.62 0.87 1.14 1.79 2.29 0.62 0.77 0.87 1.04 1.11 Value -55 to 125 °C Min. 0.79 1.11 1.5 2.16 2.61 0.39 0.58 0.84 1.41 1.87 0.37 0.48 0.56 0.71 0.71 VCC-0.1 1.2 1.9 2.4 2.2 3.8 0.1 0.45 0.3 0.4 0.55 0.55 ± 10 10 10 µA µA µA V V Max. 1.16 1.56 1.87 2.74 3.33 0.62 0.87 1.14 1.79 2.29 0.62 0.77 0.87 1.04 1.11 Unit VT+ Positive Input threshold V VT- Negative Input threshold V VH Hysteresis Voltage V VOH High Level Output Voltage 4/11 74LX1G132 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 3.0 to 3.6 4.5 to 5.5 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 CL (pF) RL (Ω ) ts = tr (ns) -40 to 85 °C Min. 2 2 1 1 2 2 1 1 1 Max. 12.0 7.0 6.0 5.5 11.0 6.5 6.5 5.5 5.0 Value -55 to 125 °C Min. 2 2 1 1 2 2 1 1 1 Max. 12.0 7.0 6.0 5.5 11.0 6.5 6.5 5.5 5.0 Unit tPLH tPHL Propagation Delay Time 15 1MΩ 3.0 30 30 50 50 50 1000 500 500 500 500 2.0 2.0 2.5 2.5 2.5 ns CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 0 1.8 2.5 3.3 fIN = 10MHz Value TA = 25 °C Min. Typ. 5 20 21 22 Max. pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC 5/11 74LX1G132 TEST CIRCUIT RT = ZOUT of pulse generator (typically 50Ω) TEST CIRCUIT AND WAVEFORM SYMBOL VALUE Symbol 1.65 to 1.95V CL RL VIH VM tr = tr 15pF/30pF 1MΩ/1000Ω VCC VCC/2