74V1G80

74V1G80

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    74V1G80 - SINGLE POSITIVE EDGE TRIGGERED D-TYPE FLIP-FLOP - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
74V1G80 数据手册
74V1G80 SINGLE POSITIVE EDGE TRIGGERED D-TYPE FLIP-FLOP s s s s s s s s HIGH SPEED: fMAX = 180MHz (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY SOT23-5L SOT323-5L ORDER CODES PACKAGE SOT23-5L SOT323-5L T&R 74V1G80STR 74V1G80CTR DESCRIPTION The 74V1G80 is an advanced high-speed CMOS SINGLE POSITIVE EDGE TRIGGERED D-TYPE FLIP-FLOP WITH INVERTED OUTPUT fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. it is designed to operate from 2V to 5.5V, making this device ideal for portable applications. This D-Type flip-flop is controlled by a clock input (CK). On the positive transition of the clock, the Q output will be set to the logic inverted state that was setup at the D input. Following the hold time interval, data at the D input can be changed without affecting the level at the output. Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V. It’s available in the commercial temperature range. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/10 74V1G80 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2 4 3 5 SYMBOL D CK Q GND VCC NAME AND FUNCTION Data Input Clock Input (Positive Edge) Inverted Flip-Flop Output Ground (0V) Positive Supply Voltage TRUTH TABLE D L H L H CK Q H L Qn Qn ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 260 Unit V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current Tstg Storage Temperature TL Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (note 1) (VCC = 3.3 ± 0.3V) (VCC = 5.0 ± 0.5V) Parameter Value 2 to 5.5 0 to 5.5 0 to VCC -55 to 125 0 to 100 0 to 20 Unit V V V °C ns/V ns/V 1) VIN from 30% to 70% of V CC 2/10 74V1G80 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 3.0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 4.5 3.0 4.5 VOL Low Level Output Voltage 2.0 3.0 4.5 3.0 4.5 II ICC Input Leakage Current Quiescent Supply Current 0 to 5.5 5.5 IO=-50 µA IO=-50 µA IO=-50 µA IO=-4 mA IO=-8 mA IO=50 µA IO=50 µA IO=50 µA IO=4 mA IO=8 mA VI = 5.5V or GND VI = VCC or GND TA = 25°C Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 ± 0.1 1 2.0 3.0 4.5 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.44 0.44 ±1 10 Typ. Max. Value -40 to 85°C Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.4 3.7 0.1 0.1 0.1 0.55 0.55 ±1 20 µA µA V V Max. -55 to 125°C Min. 1.5 0.7VCC 0.5 0.3VCC V V Max. Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL VOH AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) 3.3 (*) Value TA = 25°C Min. Typ. 4.9 5.9 3.5 4.5 4.0 3.0 4.0 3.0 1.0 1.0 Max. 8.4 12.0 5.6 8.0 -40 to 85°C Min. 1.0 1.0 1.0 1.0 4.0 3.0 4.0 3.0 1.0 1.0 120 180 90 150 Max. 9.8 14.0 7.0 10.0 -55 to 125°C Min. 1.0 1.0 1.0 1.0 4.0 3.0 4.0 3.0 1.0 1.0 90 150 Max. 10.8 15.0 8.0 11.0 ns ns ns Unit CL (pF) 15 50 15 50 tPLH tPHL Propagation Delay Time CK to Q 3.3(*) 5.0(**) 5.0(**) tW ts th fMAX CK Pulse Width, HIGH or LOW Setup Time D to CK, HIGH or LOW Hold Time D to CK, HIGH or LOW Maximum Clock Frequency 3.3 5.0 (*) (**) 3.3(*) 5.0(**) 3.3(*) 5.0 (**) ns 3.3(*) 5.0(**) 50 50 100 165 MHz (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V 3/10 74V1G80 CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter Min. CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) TA = 25°C Typ. 4 8 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF Unit 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC TEST CIRCUIT CL = 15/50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) 4/10 74V1G80 WAVEFORM: PROPAGATION DELAY, SETUP AND HOLD TIMES (f=1MHz; 50% duty cycle) 5/10 74V1G80 SOT23-5L MECHANICAL DATA mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.35 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.95 1.9 0.55 13.7 TYP MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 37.4 74.8 21.6 TYP. MAX. 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 mils 6/10 74V1G80 SOT323-5L MECHANICAL DATA mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.10 0.80 0.00 0.80 0.15 0.10 1.80 1.80 1.15 0.65 1.3 0.30 3.9 TYP MAX. 1.10 0.10 1.00 0.30 0.18 2.20 2.40 1.35 MIN. 31.5 0.0 31.5 5.9 3.9 70.9 70.9 45.3 25.6 51.2 11.8 TYP. MAX. 43.3 3.9 39.4 11.8 7.1 86.6 94.5 53.1 mils 7/10 74V1G80 Tape & Reel SOT23-xL MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 3.13 3.07 1.27 3.9 3.9 3.23 3.17 1.37 4.0 4.0 12.8 20.2 60 14.4 3.33 3.27 1.47 4.1 4.1 0.123 0.120 0.050 0.153 0.153 0.127 0.124 0.054 0.157 0.157 13.0 TYP MAX. 180 13.2 0.504 0.795 2.362 0.567 0.131 0.128 0.0.58 0.161 0.161 0.512 MIN. TYP. MAX. 7.086 0.519 inch 8/10 74V1G80 Tape & Reel SOT323-xL MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 3.98 3.98 2.25 2.7 1.2 4 4 4.2 4.2 0.156 0.156 175 12.8 20.2 59.5 60 60.5 14.4 0.088 0.106 0.047 0.157 0.157 0.165 0.165 TYP 180 13 MAX. 185 13.2 MIN. 6.889 0.504 0.795 2.362 0.567 TYP. 7.086 0.512 MAX. 7.283 0.519 inch 9/10 74V1G80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 10/10
74V1G80
物料型号: - 74V1G80

器件简介: - 74V1G80是一款高速、低功耗、单正边沿触发的D型触发器,采用C2MOS技术制造。工作电压范围是2V至5.5V,适用于便携式应用,所有输入和输出均配备了防静电放电保护电路,具有ESD免疫和瞬态过电压保护。

引脚分配: - 引脚1:D(数据输入) - 引脚2:CK(时钟输入,正边沿) - 引脚3:GND(地) - 引脚4:Q(触发器反向输出) - 引脚5:Vcc(正电源电压)

参数特性: - 工作频率:典型值180MHz,工作电压5V时 - 低功耗:典型值1μA,工作温度25°C时 - 噪声免疫力:最小值28%Vcc - 输出对称阻抗:|IOH| = IOL = 8mA,最小值,工作电压4.5V时 - 工作电压范围:2V至5.5V - 提升的抗锁保护

功能详解: - 74V1G80由时钟输入(CK)控制,在时钟的正边沿,Q输出将被设置为在D输入端设定的逻辑反转状态。

应用信息: - 该设备可以在5V至3V之间进行接口,适用于多种应用场景,包括便携式设备。

封装信息: - SOT23-5L封装的订单代码为74V1G80STR - SOT323-5L封装的订单代码为74V1G80CTR
74V1G80 价格&库存

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