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74V1T07

74V1T07

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    74V1T07 - SINGLE BUFFER OPEN DRAIN - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
74V1T07 数据手册
® 74V1T07 SINGLE BUFFER (OPEN DRAIN) s s s s s s HIGH SPEED: tPD = 4.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUT OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V IMPROVED LATCH-UP IMMUNITY S (SOT23-5L) C (SC-70) ORDER CODE: 74V1T07S 74V1T07C Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V. DESCRIPTION The 74V1T07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. PIN CONNECTION AND IEC LOGIC SYMBOLS October 1999 1/7 74V1T07 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2 4 3 5 SYMBOL N.C. 1A 1Y GND VCC NAME AND FUNCT ION Not Connected Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A L H Z = High impedance Y L Z ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 260 Unit V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (see note 3) (V CC = 5.0 ± 0.5V) Parameter Valu e 4.5 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 20 Unit V V V o C ns/V 1)VIN from0.8V to 2 V 2/7 74V1T07 DC SPECIFICATIONS Symb ol Parameter T est Cond ition s V CC (V) VIH VIL VOL IOZ High Level Input Voltage Low Level Input Voltage Low Level Output Voltage High Impedance Output Leakage Current Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current 4.5 to 5.5 4.5 to 5.5 4.5 4.5 5.5 0 to 5.5 5.5 5.5 I O=50 µ A IO=8 mA VI = VIH or VIL VO = VCC or GND VI = 5.5V or GND VI = VCC or GND One Input at 3.4V, other input at VCC or GND 0.0 Min. 2 0.8 0.1 0.36 ±0.25 Typ . Value T A = 25 o C Max. -40 to 85 o C Min . 2 0.8 0.1 0.44 ±2.5 Max. V V Un it V µA II ICC ∆ICC ±0.1 1 1.35 ±1.0 10 1.5 µA µA mA AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns) Symb ol Parameter Test Co ndition V CC (*) CL (V) (pF ) 5.0 5.0 15 50 Value o T A = 25 C Min. Typ . Max. 3.3 4.5 4.7 6.1 Un it -40 to 85 C Min . Max. 1.0 5.4 1.0 7.1 o tPLZ tPZL Propagation Delay Time ns (*) Voltage range is 5V ± 0.5V CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Min. C IN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) Typ . 4 5 9 Value T A = 25 o C Max. 10 -40 to 85 o C Min . Max. 10 pF pF pF Un it 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC 3/7 74V1T07 TEST CIRCUIT CL = 15/50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 4/7 74V1T07 SOT23-5L MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.35 0.95 1.9 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.55 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 13.7 37.4 74.8 mils TYP. MAX. 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 21.6 DIM. 5/7 74V1T07 SC-70 MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.80 0.00 0.80 0.15 0.10 1.80 1.80 1.15 0.10 0.65 1.3 TYP. MAX. 1.10 0.10 1.00 0.30 0.18 2.20 2.40 1.35 0.30 MIN. 31.5 0.0 31.5 5.9 3.9 70.9 70.9 45.3 3.9 25.6 51.2 mils TYP. MAX. 43.3 3.9 39.4 11.8 7.1 86.6 94.5 53.1 11.8 DIM. 6/7 74V1T07 Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 7/7
74V1T07
1. 物料型号:74V1T07,这是一个高速CMOS单缓冲器(开漏)集成电路。

2. 器件简介:74V1T07采用亚微米硅门和双层金属连线C²MOS技术制造。内部电路由两级缓冲输出组成,提供高噪声免疫和稳定输出。

3. 引脚分配: - 1号引脚:N.C.(未连接) - 2号引脚:1A(数据输入) - 3号引脚:GND(地) - 4号引脚:1Y(数据输出) - 5号引脚:Vcc(正供电压)

4. 参数特性: - 工作电压范围:4.5V至5.5V - 输入电压范围:0V至5.5V - 输出电压范围:0V至Vcc - 工作温度范围:-40至+85°C - 典型传播延迟时间:4.7ns(在5V供电下) - 典型功耗:1µA(在25°C时)

5. 功能详解:74V1T07具有高速性能和低功耗,兼容TTL输出。在输入端提供上电保护,可以在输入端接受0至7V的电压而不考虑供电电压。该器件可用于5V至3V的接口。

6. 应用信息:74V1T07可用于高速数字电路中,作为缓冲器或接口器件,尤其是在需要高速信号传输和低功耗的应用场合。

7. 封装信息: - S(SOT23-5L)封装 - C(SC-70)封装 - 订购代码:74V1T07C
74V1T07 价格&库存

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