74V2G132STR

74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA s s s s s s s s HIGH SPEED: tPD = 3.0ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V IIOH| = IOL = 4mA (MIN) at VCC = 3.0V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY SOT23-8L SOT323-8L ORDER CODES PACKAGE SOT23-8L SOT323-8L T&R 74V2G132STR 74V2G132CTR DESCRIPTION The 74V2G132 is an advanced high-speed CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. Pin configuration and function are the same as those of the 74V2G00 but the 74V2G132 has hysteresis. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. PIN CONNECTION AND IEC LOGIC SYMBOLS November 2001 1/9 This is preliminary information on a new product now in development are or undergoing evaluation. Details subject to change without notice. 74V2G132 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 5 2, 6 7, 3 4 8 SYMBOL 1A, 2A 1B, 2B 1Y, 2Y GND VCC NAME QND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y H H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage (see note 1) DC Output Voltage (see note 2) DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 − 20 − 20 ± 25 ± 50 -65 to +150 260 Unit V V V V mA mA mA mA °C °C ICC or IGND DC VCC or Ground Current Tstg Storage Temperature TL Lead Temperature (10 sec) Absolute Maximum Rating are those value beyond which damage to the device may occour. Functional operation under these condition is not implied RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO VO Top Supply Voltage Input Voltage Output Voltage Output Voltage Operating Temperature Parameter Value 2 to 5.5 0 to 5.5 0 to 5.5 0 to VCC -55 to 125 Unit V V V V °C 2/9 74V2G132 DC SPECIFICATION Test Condition Symbol Parameter VCC (V) 3.0 4.5 5.5 3.0 4.5 5.5 3.0 4.5 5.5 2.0 3.0 4.5 3.0 4.5 VOL Low Level Output Voltage 2.0 3.0 4.5 3.0 4.5 II ICC IOPD Input Leakage Current Quiescent Supply Current Power down Output Leakage Current 0 to 5.5 5.5 0 IO=-50 µA IO=-50 µA IO=-50 µA IO=-4 mA IO=-8 mA IO=50 µA IO=50 µA IO=50 µA IO=4 mA IO=8 mA VI = 5.5V or GND VI = VCC or GND VO = 5.5 TA = 25°C Min. Typ. Max. 2.20 3.15 3.85 0.90 1.35 1.65 0.30 0.40 0.50 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 ± 0.1 1 0.5 0.90 1.35 1.65 0.30 0.40 0.50 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.44 0.44 ±1 10 5 Value -40 to 85°C Min. Max. 2.20 3.15 3.85 0.90 1.35 1.65 0.30 0.40 0.50 1.9 2.9 4.4 2.4 3.7 0.1 0.1 0.1 0.55 0.55 ±1 20 10 µA µA µA V V -55 to 125°C Min. Max. 2.20 3.15 3.85 V Unit VP High Level Input Voltage Low Level Input Voltage Hysteresis Voltage VN V VH 0..5 0.8 1.0 2.0 3.0 4.5 1.20 1.40 1.60 1.20 1.40 1.60 1.20 1.40 1.60 V VOH High Level Ouput Voltage AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) 3.3(*) 3.3(*) 5.0(**) 5.0(**) (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V Value TA = 25°C Min. Typ. 5.5 8.0 3.7 5.2 Max. 7.9 11.4 5.5 7.5 -40 to 85°C Min. 1.0 1.0 1.0 1.0 Max. 9.5 13.0 6.5 8.5 -55 to 125°C Min. 1.0 1.0 1.0 1.0 Max. 9.5 13.0 6.5 8.5 ns Unit CL (pF) 15 50 15 50 tPLH tPHL Propagation Delay Time 3/9 74V2G132 CAPACITANCE CHARACTERISTICS Test Condition Symbol Parameter Min. CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) TA = 25°C Typ. 4 19 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF Unit 1) CPD is defined as the value of the IC’s internal equivqlent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current cqn be obtqined by the following equation. ICC(opr) = CPD x VCC x fIN + ICC TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = R1 = 500Ω or equivalent RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle) 4/9 74V2G132 SOT23-8L MECHANICAL DATA mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.35 0.90 0.00 0.90 0.22 0.09 2.80 2.60 1.50 0 .65 1.95 0.55 13.7 TYP MAX. 1.45 0.15 1.30 0.38 0.20 3.00 3.00 1.75 MIN. 35.4 0.0 35.4 8.6 3.5 110.2 102.3 59.0 25.6 76.7 21.6 TYP. MAX. 57.1 5.9 51.2 14.9 7.8 118.1 118.1 68.8 mils 5/9 74V2G132 SOT323-8L MECHANICAL DATA mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.10 0.80 0.00 0.80 0.13 0.10 1.80 1.80 1.15 0.5 1.5 0.30 3.9 TYP MAX. 1.10 0.10 1.00 0.28 0.18 2.20 2.40 1.35 MIN. 31.5 0.0 31.5 5.1 3.9 70.9 70.9 45.3 19.7 59.0 11.8 TYP. MAX. 43.3 3.9 34.9 11.0 7.1 86.6 94.5 53.1 mils 6/9 74V2G132 Tape & Reel SOT23-xL MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 3.13 3.07 1.27 3.9 3.9 3.23 3.17 1.37 4.0 4.0 12.8 20.2 60 14.4 3.33 3.27 1.47 4.1 4.1 0.123 0.120 0.050 0.153 0.153 0.127 0.124 0.054 0.157 0.157 13.0 TYP MAX. 180 13.2 0.504 0.795 2.362 0.567 0.131 0.128 0.0.58 0.161 0.161 0.512 MIN. TYP. MAX. 7.086 0.519 inch 7/9 74V2G132 Tape & Reel SOT323-xL MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 3.98 3.98 2.25 2.7 1.2 4 4 4.2 4.2 0.156 0.156 175 12.8 20.2 59.5 60 60.5 14.4 0.088 0.106 0.047 0.157 0.157 0.165 0.165 TYP 180 13 MAX. 185 13.2 MIN. 6.889 0.504 0.795 2.362 0.567 TYP. 7.086 0.512 MAX. 7.283 0.519 inch 8/9 74V2G132 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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