74V2G66STR

® 74V2G66 DUAL BILATERAL SWITCH PRELIMINARY DATA s s s s s HIGH SPEED: tPD = 0.3 ns (TYP.) at VCC = 5V tPD = 0.4 ns (TYP.) at VCC = 3.3V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC LOW ”ON” RESISTANCE: RON = 10Ω (TYP.)AT VCC = 5.0V II/O=100µA RON = 12Ω (TYP.)AT VCC = 3.3V II/O=100µA SINE WAVE DISTORTION 0.04% (TYP.) AT VCC=3.3V f=1KHz WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5V SOT23-8L ORDER CODES PACKAGE SOT23-8L T UBE T&R 74V2G66STR DESCRIPTION The 74V2G66 is an high-speed CMOS DUAL BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This feature makes this part ideal for battery-powered equipment. This bilateral switch handles rail to rail analog and digital signals that may vary across the full power-supply range (from Vcc to Ground). The C input is provided to control the switch and it’s compatible with standard CMOS output; the switch is ON when the C input is held high and off when C is held low. It can be used in many application as Battery Powered System, Audio Signal Routing, Communications System, Test Equipment. It’s available in the commercial temperature range in SOT23-8L. PIN CONNECTION AND IEC LOGIC SYMBOLS June 2000 1/8 74V2G66 LOGIC DIAGRAM PIN DESCRIPTION PIN No 1, 5 2, 6 3, 7 4 8 SYMBOL 1 to 2 I/O 1 to 2 O/I 1C to 2C GND VCC NAME AND FUNCT ION Independent Input/Output Independent Output/Input Enable Input (Active HIGH) Ground (0V) Positive Supply Voltage TRUTH TABLE CONTROL H L SWITCH F UNCTIO N ON OFF ABSOLUTE MAXIMUM RATINGS Symbol VCC VI V IC VO IIK IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Control Input Voltage DC Output Voltage DC Input Diode Current DC Control Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to 7 -0.5 to VCC + 0.5 ± 20 - 20 ± 20 ± 50 ± 100 -65 to +150 300 Unit V V V V mA mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI V IC VO Top dt/dv Input Voltage Control Input Voltage Output Voltage Operating Temperature: Input Rise and Fall Time (note 2) Parameter Supply Voltage (note 1) Valu e 2 to 5.5 0 to VCC 0 to 5.5 0 to VCC -40 to +85 0 to 10 Unit V V V V o C ns/V 1) Truth Table guaranteed: 1.2V to 5.5V 2) VIN from 30% to70%VCC 2/8 74V2G66 DC SPECIFICATIONS Symb ol Parameter V CC (V) VIH High Level Control Input Voltage Low Level Control Input Voltage ON Resistance 2.0 2.7 to 5.5 2.0 2.7 to 5.5 3.3 (**) 5.0 (*) 3.3 (**) T est Cond ition s Min. 1.5 0.7VCC Typ . Value T A = 25 o C Max. -40 to 85 o C Min . 1.5 0.7VCC 0.5 0.3VCC 0.5 0.3VCC 30 20 Max. Un it V VIL V R ON V IC = V IH V I/O = V CC to G ND II/ O ≤ 1mA V IC = V IH V I/ O = VCC or GND II/ O ≤ 1mA 14 12 12 10 2 26 17 18 14 Ω 24 18 5.0 (*) ∆RON Difference of ON Resistance Between Switches Input/Output Leakage Current (SWITCH OFF) Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) Control Input Leakage Current Quiescent Supply Current V IC = V IH 3.0 V I/O = V CC to G ND to 5.5 II/ O ≤ 1mA 5.5 V OS = V CC to GND V IS = V CC to G ND V I C = VI L VOS = VCC to GND VIC = VIH VIC = 5.5V or GND V IC = V CC or GND Ω ±0.1 ±1.0 IOFF µA µA IIZ 5.5 ±0.1 ±1.0 IIN ICC 0 to 5.5 5.5 ±0.1 1 ±1.0 10 µA µA (*) Voltage range is 5V ± 0.5V (**) Voltagerange is 3.3V ± 0.3V 3/8 74V2G66 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t r = tf =3 ns) Symb ol Parameter V CC (V) tPD tPZL tPZH tPLZ tPHZ C IN CI/O CPD Delay Time Output Enable Time Output Disable Time Input Capacitance Switch Terminal Capacitance Power Dissipation Capacitance (note 1) 3.3 5.0 3.3 5.0(**) 3.3(*) 5.0(**) 3.3(*) 5.0(**) (*) Test Co ndition Value T A = 25 o C Min. Typ . Max. 0.4 0.3 2.5 2.0 5.0 5.0 5 10 2.5 3 0.8 0.6 4.0 4.0 7.5 7.5 Un it -40 to 85 o C Min . Max. 1.2 1.0 5.0 5.0 9.0 9.0 ns ns ns pF pF pF t r = tf =6ns R L = 1k Ω R L = 500 Ω 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/2 (switch). (*) Voltage range is 3.3V ± 0.3V (**) Voltagerange is 5V ± 0.5V ANALOG SWITCH CHARACTERISTICS (GND = 0 V, TA = 25oC) Symb ol Parameter V CC (V) 3.3 5.0(*) 3.3 5.0(*) 3.3 5.0(*) 3.3 5.0(*) 3.3 5.0(*) V IN (Vp-p) 2.75 4 Adjust fI N voltage to Obtain 0dBm at V OS . Increase fIN Frequency until dB Meter reads -3dB R L = 50Ω, C L = 10pF VIN is centered at VCC /2. Adjust fIN voltage to obtain 0dBm at VIS RL = 600Ω, CL = 50pF, fIN = 1MHz sine wave R L = 600Ω, CL = 50pF, fIN = 1MHz square wave tr = tf = 6ns RL = 600Ω, CL = 50pF, fIN = 1MHz sine wave Test Co nditi on Value Un it Sine Wave Distortion (THD) fMAX Frequency Response (Switch ON) Feedthrough Attenuation (Switch OFF) Crosstalk (Control Input to Signal Output) Crosstalk (Between Switches) (*) Voltage range is 5V ± 0.5V fIN = 1 KHz RL = 10KΩ CL = 50 pF 0.04 0.04 150 180 -60 -60 60 60 -60 -60 % MHz dB mV dB 4/8 74V2G66 SWITCHING CHARACTERISTICS TEST CIRCUIT tPLZ, tPHZ, tPZL, tPZH. FEEDTHROUGH ATTENUATION BANDWIDTH ATTENUATION CI–O CI/O MAXIMUM CONTROL FREQUENCY GND (VSS) CROSSTALK (control to output) 5/8 74V2G66 CHANNEL RESITANCE (RON) ICC (Opr.) 6/8 74V2G66 SOT23-8L MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.22 0.09 2.80 2.60 1.50 0.35 0.65 1.95 TYP. MAX. 1.45 0.15 1.30 0.38 0.20 3.00 3.00 1.75 0.55 MIN. 35.4 0.0 35.4 8.6 3.5 110.2 102.3 59.0 13.8 25.6 76.7 mils TYP. MAX. 57.1 5.9 51.2 14.9 7.8 118.1 118.1 68.8 21.6 DIM. 7/8 74V2G66 Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. 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