74V2T02STR

74V2T02 DUAL 2-INPUT NOR GATE ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 5.1ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA = 25°C COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 4.5V to 5.5V IMPROVED LATCH-UP IMMUNITY DESCRIPTION The 74V2T02 is an advanced high-speed CMOS DUAL 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. SOT23-8L ORDER CODES PACKAGE T&R SOT23-8L 74V2T02STR The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. PIN CONNECTION AND IEC LOGIC SYMBOLS June 2003 1/7 74V2T02 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° SYMBOL 1, 5 2, 6 7, 3 4 1A, 2A 1B, 2B 1Y, 2Y GND VCC 8 NAME QND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A B Y L L H H L H L H H L L L ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Supply Voltage -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage -0.5 to VCC + 0.5 V IIK DC Input Diode Current - 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ± 50 mA -65 to +150 °C 300 °C VCC ICC or IGND DC VCC or Ground Current Tstg Storage Temperature TL Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Unit 4.5 to 5.5 V VI Input Voltage 0 to 5.5 V VO Output Voltage 0 to VCC V Top Operating Temperature -55 to 125 °C 0 to 20 ns/V dt/dv Input Rise and Fall Time (note 1) (VCC = 5.0 ± 0.5V) 1) VIN from 0.8V to 2V 2/7 Value 74V2T02 DC SPECIFICATIONS Test Condition Symbol VIH Parameter 4.5 to 5.5 4.5 to 5.5 VOL Low Level Output Voltage II Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current VIL VOH ICC +ICC TA = 25°C VCC (V) High Level Input Voltage Low Level Input Voltage High Level Output Voltage Value Min. Typ. Max. 2 -40 to 85°C -55 to 125°C Min. Min. 2 0.8 4.5 IO=-50 µA 4.4 4.5 IO=-8 mA 3.94 4.5 IO=50 µA 4.5 IO=8 mA 0 to 5.5 VI = 5.5V or GND 5.5 VI = VCC or GND 5.5 One Input at 3.4V, other input at VCC or GND Max. 4.5 4.4 0.1 V 0.8 4.4 3.8 0.0 Max. 2 0.8 Unit V V 3.7 0.1 0.1 V 0.36 0.44 0.55 ± 0.1 ± 1.0 ± 1.0 µA 1 10 20 µA 1.35 1.5 1.5 mA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) CL (pF) tPLH tPHL Propagation Delay Time 5.0 (*) 5.0 (*) 15 50 Value TA = 25°C Min. -40 to 85°C -55 to 125°C Typ. Max. Min. Max. Min. Max. 4.5 5.1 6.5 7.5 1.0 1.0 7.5 8.5 1.0 1.0 8.5 9.5 Unit ns (*) Voltage range is 5.0V ± 0.5V CAPACITIVE CHARACTERISTICS Test Condition Symbol Value TA = 25°C Parameter Typ. Max. CIN Input Capacitance Min. 4 10 CPD Power Dissipation Capacitance (note 1) 10 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2 3/7 74V2T02 TEST CIRCUIT CL = 15/50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle) 4/7 74V2T02 SOT23-8L MECHANICAL DATA mm. mils DIM. MIN. TYP MAX. MIN. TYP. MAX. A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.22 0.38 8.6 14.9 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 2.60 3.00 102.3 118.1 E1 1.50 1.75 59.0 68.8 e 0 e1 L 0.35 .65 25.6 1.95 76.7 0.55 13.7 21.6 5/7 74V2T02 Tape & Reel SOT23-xL MECHANICAL DATA mm. inch DIM. MIN. TYP A MIN. TYP. 180 13.0 13.2 MAX. 7.086 C 12.8 D 20.2 0.795 N 60 2.362 T 6/7 MAX. 0.504 0.512 14.4 0.519 0.567 Ao 3.13 3.23 3.33 0.123 0.127 0.131 Bo 3.07 3.17 3.27 0.120 0.124 0.128 Ko 1.27 1.37 1.47 0.050 0.054 0.0.58 Po 3.9 4.0 4.1 0.153 0.157 0.161 P 3.9 4.0 4.1 0.153 0.157 0.161 74V2T02 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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