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74VHC04M

74VHC04M

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    74VHC04M - HEX INVERTER - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
74VHC04M 数据手册
® 74VHC04 HEX INVERTER PRELIMINARY DATA s s s s s s s s s s HIGH SPEED: tPD = 3.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 04 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.) M (Micro Package) T (TSSOP Package) ORDER CODES : 74VHC04M 74VHC04T The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2kV ESD immunity and transient excess voltage. DESCRIPTION The 74VHC04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. PIN CONNECTION AND IEC LOGIC SYMBOLS June 1999 1/7 74VHC04 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 SYMBOL 1A to 6A 1Y to 6Y GND VCC NAME AND FUNCT ION Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L H Y H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 75 -65 to +150 300 Unit V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (see note 1) (VCC = 3.3 ± 0.3V) (V CC = 5.0 ± 0.5V) Parameter Valu e 2.0 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 100 0 to 20 Unit V V V o C ns/V ns/V 1) VIN from 30% to70%of VCC 2/7 74VHC04 DC SPECIFICATIONS Symb ol Parameter T est Cond ition s V CC (V) VIH VIL VOH High Level Input Voltage Low Level Input Voltage High Level Output Voltage 2.0 3.0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 4.5 3.0 4.5 VOL Low Level Output Voltage 2.0 3.0 4.5 3.0 4.5 II ICC Input Leakage Current Quiescent Supply Current 0 to 5.5 5.5 IO=-50 µA IO=-50 µA IO=-50 µA IO=-4 mA IO=-8 mA IO=50 µA IO=50 µA IO=50 µA IO=4 mA IO=8 mA VI = 5.5V or GND VI = VCC or GND 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 ±0.1 2 2.0 3.0 4.5 Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.44 0.44 ±1.0 20 µA µA V V Typ . Value T A = 25 o C Max. -40 to 85 o C Min . 1.5 0.7VCC 0.5 0.3VCC Max. V V Un it AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns) Symb ol Parameter V CC (V) tPLH tPHL Propagation Delay Time Test Co ndition CL (pF ) 15 50 15 50 Value T A = 25 o C Min. Typ . 5.0 7.5 3.8 5.3 Max. 7.1 10.6 5.5 7.5 Un it -40 to 85 o C Min . 1.0 1.0 1.0 1.0 Max. 8.5 12.0 6.5 8.5 3.3 3.3(*) 5.0(**) 5.0 (**) (*) ns (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5V ± 0.5V CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s o Value T A = 25 C Min. Typ . 4 19 Max. 10 -40 to 85 C Min . Max. 10 o Un it C IN CPD Input Capacitance Power Dissipation Capacitance (note 1) pF pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate) 3/7 74VHC04 DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter T est Cond ition s V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 5.0 -0.8 5.0 5.0 C L = 50 pF 3.5 1.5 Min. Typ . 0.3 -0.3 V Value T A = 25 o C Max. 0.8 -40 to 85 o C Min . Max. Un it 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to5.0V. Inputs under test switching: 5.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. TEST CIRCUIT CL = 15/50 pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 4/7 74VHC04 SO-14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 5/7 74VHC04 TSSOP14 MECHANICAL DATA mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 4.9 6.25 4.3 5 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.20 5.1 6.5 4.48 0.002 0.335 0.0075 0.0035 0.193 0.246 0.169 0.197 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.201 0.256 0.176 DIM. A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 6/7 74VHC04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 7/7
74VHC04M
物料型号: - 74VHC04T

器件简介: - 74VHC04是一款采用亚微米硅门和双层金属布线的C²MOS技术的高速CMOS六反相器。内部电路由包括缓冲输出在内的3级电路组成,提供高噪声免疫和稳定输出。所有输入和输出均配备有防静电放电保护电路,具有2kV的ESD免疫能力和瞬态过电压保护。

引脚分配: - 1,3,5,9,11,13:1A到6A(数据输入) - 2,4,6,8,10,12:1Y到6Y(数据输出) - 7:GND(地或0V) - 14:Vcc(正电源电压)

参数特性: - 工作电压范围:2V至5.5V - 典型传播延迟时间:3.8ns - 最大静态功耗:2μA - 最高噪声免疫:VNH = VNL = 28% VCC - 输出阻抗:|IOH| = |IOL| = 8 mA - 工作温度范围:-40至+85℃

功能详解: - 74VHC04提供所有输入的上电保护,可以在不考虑电源电压的情况下接受0至7V的输入电压。该设备可用于5V至3V的接口。 - 每个门的输入和输出均具有保护电路,提供2kV的ESD保护和瞬态过电压保护。

应用信息: - 该芯片可用于需要高速、低功耗和高噪声免疫的应用场合,如数字电路、信号处理等。

封装信息: - SO-14和TSSOP14两种封装方式,具体尺寸和机械数据已在文档中给出。
74VHC04M 价格&库存

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