74VHCT132A

® 74VHCT132A QUAD 2-INPUT SCHMITT NAND GATE PRELIMINARY DATA s s s s s s s s s s HIGH SPEED: tPD = 6.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC TYPICAL HYSTERESIS: 0.7V at VCC = 4.5V POWER DOWN PROTECTION ON INPUTS & OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 132 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.) SOP PACKAGE SOP TSSOP T UBE 74VHCT132AM TSSOP T&R 74VHCT132AMTR 74VHCT132ATTR ORDER CODES DESCRIPTION The 74VHCT132A is an advanced high-speed CMOS QUAD 2-INPUT SCHMITT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. Pin configuration and function are the same as those of the VHCT00A but the VHCT132A has hysteresis. This together with its schmitt trigger function allows it to be used on line receivers with slow rise/fall input signals. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS February 2000 1/7 74VHCT132A INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCT ION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y H H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage (see note 1) DC Output Voltage (see note 2) DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 300 Unit V V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. 1) VCC =0V 2) High or Low State RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO VO Top Supply Voltage Input Voltage Output Voltage (see note 1) Output Voltage (see note 2) Operating Temperature Parameter Valu e 4.5 to 5.5 0 to 5.5 0 to 5.5 0 to VCC -40 to +85 Unit V V V V o C 1) VCC =0V 2) High or Low State 2/7 74VHCT132A DC SPECIFICATIONS Symb ol Parameter T est Cond ition s V CC (V) Vt+ VtVh VOH VOL II ICC ∆ICC High Level Threshold Voltage Low Level Threshold Voltage Hysteresis Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current Output Leakage Current 4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 4.5 4.5 0 to 5.5 5.5 5.5 I O =-50 µ A IO=-8 mA I O=50 µ A IO=8 mA VI = 5.5V or GND VI = VCC or GND One Input at 3.4V, other input at VCC or GND VOUT = 5.5V 0.4 0.4 4.4 3.94 0.0 0.1 0.36 ±0.1 2 1.35 4.5 Min. 2.0 2.0 0.6 0.6 1.4 1.5 0.4 0.4 4.4 3.8 0.1 0.44 ±1.0 20 1.5 Typ . Value T A = 25 o C Max. -40 to 85 o C Min . 2.0 2.0 0.6 0.6 1.4 1.5 Max. V V V V V µA µA mA Un it IOPD 0 0.5 5.0 µA AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns) Symb ol Parameter Test Co ndition V CC (*) CL (pF ) (V) 5.0 5.0 15 50 Value T A = 25 o C Min. Typ . 6.5 7.2 Max. 8.8 9.8 Un it -40 to 85 o C Min . 1.0 1.0 Max. 10.4 11.4 tPLH tPHL Propagation Delay Time ns (*) Voltage range is 5V ± 0.5V CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s o Value T A = 25 C Min. Typ . 6 18 Max. 10 -40 to 85 C Min . Max. 10 o Un it C IN CPD Input Capacitance Power Dissipation Capacitance (note 1) pF pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate) 3/7 74VHCT132A DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter T est Cond ition s V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 5.0 -0.8 5.0 5.0 C L = 50 pF 2.0 0.6 Min. Typ . 0.3 -0.3 V Value T A = 25 o C Max. 0.8 -40 to 85 o C Min . Max. Un it 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. TEST CIRCUIT CL = 15/50 pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 4/7 74VHCT132A SO-14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 5/7 74VHCT132A TSSOP14 MECHANICAL DATA mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 4.9 6.25 4.3 5 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.20 5.1 6.5 4.48 0.002 0.335 0.0075 0.0035 0.193 0.246 0.169 0.197 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.201 0.256 0.176 DIM. A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 6/7 74VHCT132A Information furnished is believed to be accurate and reliable. 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