A1C15S12M3
ACEPACK™ 1 converter inverter brake, 1200 V, 15 A
trench gate field-stop IGBT M series, soft diode and NTC
Datasheet - production data
Features
ACEPACK™ 1 power module
DBC Cu Al2O3 Cu
Converter inverter brake topology
1600 V, very low drop rectifiers for
converter
1200 V, 15 A IGBTs and diodes
VCE(sat): 1.95 V @ IC = 15 A
Soft and fast recovery diode
Integrated NTC
ACEPACK™ 1
Applications
Figure 1: Internal electrical schematic
Inverters
Motor drives
Description
This power module is a converter-inverter brake
(CIB) topology in an ACEPACK™ 1 package with
NTC, integrating the advanced trench gate fieldstop technology from STMicroelectronics. This
new IGBT technology represents the best
compromise between conduction and switching
loss, to maximize the efficiency of any converter
system up to 20 kHz.
Table 1: Device summary
Order code
Marking
Package
Leads type
A1C15S12M3
A1C15S12M3
ACEPACK™ 1
Solder contact pins
October 2017
DocID029292 Rev 5
This is information on a product in full production.
1/18
www.st.com
Contents
A1C15S12M3
Contents
1
Electrical ratings ............................................................................. 3
1.1
1.2
Inverter stage .................................................................................... 3
1.1.1
IGBTs.................................................................................................. 3
1.1.2
Diode .................................................................................................. 4
Brake stage ....................................................................................... 5
1.2.1
IGBT ................................................................................................... 5
1.2.2
Diode .................................................................................................. 7
1.3
Converter stage................................................................................. 7
1.4
NTC ................................................................................................... 8
1.5
Package ............................................................................................ 9
2
Electrical characteristics curves .................................................. 10
3
Test circuits ................................................................................... 13
4
Topology and pin description ...................................................... 14
5
Package information ..................................................................... 15
5.1
6
2/18
ACEPACK™ 1 CIB solder pins package information ...................... 16
Revision history ............................................................................ 17
DocID029292 Rev 5
A1C15S12M3
Electrical ratings
1
Electrical ratings
1.1
Inverter stage
Limiting values at Tj = 25 °C, unless otherwise specified.
1.1.1
IGBTs
Table 2: Absolute maximum ratings of the IGBTs, inverter stage
Symbol
VCES
Description
Collector-emitter voltage (VGE = 0)
IC
Continuous collector current at Tc = 100 °C
Value
Unit
1200
V
15
A
ICP(1)
Pulsed collector current (tP = 1 ms)
30
A
VGE
Gate-emitter voltage
± 20
V
PTOT
Total power dissipation IGBT (TJMAX = 175 °C)
142.8
W
TJMAX
Maximum junction temperature
175
°C
-40 to 150
°C
TJop
Operative temperature range under switching conditions
Notes:
(1)Pulse
width limited by maximum junction temperature.
Table 3: Electrical characteristics of the IGBTs, inverter stage
Symbol
Parameter
Test conditions
Min.
Typ.
V(BR)CES
Collector-emitter
breakdown voltage
VGE = 15 V, IC= 15 A
1.95
VCE(sat)
Collector-emitter
saturation voltage
VGE = 15 V,
IC = 15 A,
TJ = 150 ˚C
2.3
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage
current
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
td(on)
Turn-on delay time
tr
Current rise time
Eon(1)
Turn-on switching
energy
IC = 1 mA, VGE = 0 V
Max.
1200
V
V
V
V
VGE = 0 V, VCE = 1200 V
100
μA
VCE = 0 V, VGE = ± 20 V
±500
nA
VCC = 960 V, IC = 15 A,
VGE = ±15 V
VCC = 600 V, IC = 15 A,
RG = 22 Ω, VGE = ±15 V,
di/dt = 820 A/µs
DocID029292 Rev 5
6
2.45
7
VCE = 25 V, f = 1 MHz,
VGE = 0 V
5
Unit
985
pF
118
pF
40
pF
71
nC
120
ns
14.5
ns
0.59
mJ
3/18
Electrical ratings
A1C15S12M3
Symbol
Parameter
Test conditions
Min.
Turn-off delay time
td(off)
VCC = 600 V, IC = 15 A,
R G = 22 Ω, VGE = ±15 V,
dv/dt = 8200 V/µs;
Current fall time
tf
Eoff(2)
Turn-off switching
energy
td(on)
Turn-on delay time
tr
Current rise time
Eon(1)
Turn-on switching
energy
td(off)
Turn-off delay time
VCC = 600 V, IC = 15 A,
RG = 22 Ω, VGE = ±15 V,
di/dt = 690 A/µs, TJ = 150 °C
VCC = 600 V, IC = 15 A,
RG = 22 Ω, VGE = ±15 V,
dv/dt = 7000 V/µs, TJ = 150 °C
Current fall time
tf
Turn-off switching
energy
Eoff(2)
Typ.
Unit
115
ns
84
ns
0.83
mJ
122
ns
17
ns
1.08
mJ
122
ns
146
ns
1.06
mJ
Short-circuit withstand
time
VCC ≤ 600V, VGE ≤ 15 V,
Tjstart ≤ 150 °C
RTHj-c
Thermal resistance
junction to case
each IGBT
0.95
RTHc-h
Thermal resistance
case to heatsink
each IGBT,
λgrease = 1 W/(m·°C)
0.90
tSC
Max.
10
µs
1.05
°C/W
°C/W
Notes:
(1)
Including the reverse recovery of the diode.
(2)Including
1.1.2
also the tail of the collector current.
Diode
Limiting values at Tj = 25 °C, unless otherwise specified.
Table 4: Absolute maximum ratings of the diode, inverter stage
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
IF
Unit
1200
V
Continuous forward current at (TC = 100 °C)
15
A
IFP(1)
Pulsed forward current
30
A
TJMAX
Maximum junction temperature
175
°C
-40 to 150
°C
TJop
Operative temperature range under switching conditions
Notes:
(1)Pulse
4/18
Value
width limited by maximum junction temperature.
DocID029292 Rev 5
A1C15S12M3
Electrical ratings
Table 5: Electrical characteristics of the diode, inverter stage
Symbol
1.2
Parameter
Test conditions
VF
Forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
Erec
Reverse recovery energy
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
Erec
Reverse recovery energy
Min.
Typ.
Max.
IF = 15 A
-
3.0
3.8
IF = 15 A, TJ = 150 ˚C
-
2.1
-
190
ns
-
1.45
µC
-
23
A
-
0.55
mJ
IF = 15 A, VR = 600 V,
VGE = ±15 V,
diF/dt = 690 A/μs,
TJ = 150 °C
-
400
ns
-
2.75
µC
-
25
A
-
1.2
mJ
IF = 15 A, VR = 600 V,
VGE = ±15 V,
diF/dt = 820 A/μs
RTHj-c
Thermal resistance junction
to case
Each diode
-
1.60
RTHc-h
Thermal resistance case to
heatsink
Each diode,
λgrease = 1 W/(m·°C)
-
1.15
1.75
Unit
V
°C/W
°C/W
Brake stage
Limiting values at Tj= 25 °C, unless otherwise specified.
1.2.1
IGBT
Table 6: Absolute maximum ratings of the IGBT, brake stage
Symbol
VCES
Parameter
Unit
1200
V
Continuous collector current (Tc = 100 °C)
15
A
ICP(1)
Pulsed collector current
30
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total power dissipation
142.8
W
TJMAX
Maximum junction temperature
175
°C
-40 to 150
°C
IC
TJop
Collector-emitter voltage (VGE = 0)
Value
Operative temperature range under switching conditions
Notes:
(1)Pulse
width limited by maximum junction temperature.
DocID029292 Rev 5
5/18
Electrical ratings
A1C15S12M3
Table 7: Electrical characteristics of the IGBT, brake stage
Symbol
Parameter
Test conditions
Typ.
Max.
Unit
V(BR)CES
Collector-emitter
breakdown voltage
VCE(sat)
Collector-emitter
saturation voltage
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
7
V
ICES
Collector cut-off current
VGE = 0 V, VCE = 1200 V
100
µA
IGES
Gate-emitter leakage
current
VCE = 0 V, VGE = ±20 V
±500
nA
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
td(on)
Turn-on delay time
tr
Current rise time
Eon(1)
Turn-on switching
energy
td(off)
Turn-off delay time
tf
IC = 1 mA, VGE = 0 V
Turn-off switching
energy
td(on)
Turn-on delay time
tr
Current rise time
Eon
Turn-on switching
energy
td(off)
Turn-off delay time
1200
V
VGE = 15 V, IC = 15 A
1.95
VGE = 15 V, IC = 15 A,
TJ = 150 ˚C
2.3
5
VCE = 25 V, f = 1MHz,
VGE = 0 V
VCC = 960 V, IC = 15 A,
VGE = ±15 V
VCC = 600 V, IC = 15 A,
RG = 22 Ω,
VGE = ±15 V,
di/dt = 820 A/µs
VCC = 600 V, IC = 15 A,
RG = 22 Ω,
VGE = ±15 V,
dv/dt = 8200 V/µs;
Current fall time
Eoff(2)
VCC = 600 V, IC = 15 A,
RG = 22 Ω, VGE = ±15 V,
di/dt = 690 A/µs, TJ = 150 °C
6
118
pF
40
pF
71
nC
120
ns
14.5
ns
0.59
mJ
115
ns
84
ns
0.83
mJ
122
ns
17
ns
1.08
mJ
122
ns
146
ns
1.06
mJ
Turn-off switching
energy
tSC
Short-circuit withstand
time
VCC ≤ 600 V, VGE ≤ 15 V,
TJstart ≤ 150 °C
RTHj-c
Thermal resistance
junction to case
Each IGBT
0.95
RTHc-h
Thermal resistance
case to heatsink
Each IGBT,
λgrease = 1 W/(m·°C)
0.90
Notes:
(1)Including
the reverse recovery of the diode.
(2)Including
the tail of the collector current.
DocID029292 Rev 5
V
pF
Eoff
Current fall time
2.45
985
VCC = 600 V, IC = 15 A,
RG = 22 Ω, VGE = ±15 V,
dv/dt = 7000 V/µs,
TJ = 150 °C
tf
6/18
Min.
10
µs
1.05
°C/W
°C/W
A1C15S12M3
1.2.2
Electrical ratings
Diode
Table 8: Absolute maximum ratings of the diode, brake stage
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
IF
Continuous forward current at (TC = 100 °C)
Value
Unit
1200
V
15
A
IFP(1)
Pulsed forward current
30
A
TJMAX
Maximum junction temperature
175
°C
-40 to 150
°C
TJop
Operative temperature range under switching conditions
Notes:
(1)Pulse
width limited by maximum junction temperature.
Table 9: Electrical characteristics of the diode, brake stage
Symbol
Test conditions
VF
Forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
Erec
Reverse recovery energy
trr
1.3
Parameter
Min.
Typ.
Max.
IF = 15 A
-
3.0
3.8
IF = 15 A, TJ = 150 ˚C
-
2.1
-
190
ns
-
1.45
µC
IF = 15 A, VR = 600 V,
VGE = ±15 V, di/dt = 820 A/μs
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
Erec
Reverse recovery energy
IF = 15 A, VR = 600 V,
VGE = ±15 V, di/dt = 690 A/μs,
TJ = 150 °C
Unit
V
-
23
A
-
0.55
mJ
-
400
ns
-
2.75
µC
-
25
A
-
1.2
mJ
RTHj-c
Thermal resistance
junction to case
Each diode
-
1.60
RTHc-h
Thermal resistance case
to heatsink
Each diode,
λgrease = 1 W/(m·°C)
-
1.15
1.75
°C/W
°C/W
Converter stage
Limiting values at Tj = 25 °C, unless otherwise specified.
Table 10: Absolute maximum ratings of the bridge rectifiers
Symbol
VRRM
IF
IFSM
I2 t
TJMAX
TJop
Description
Value
Unit
1600
V
RMS forward current
30
A
Forward surge current tp = 10 ms, TC = 25 °C
315
Forward surge current tp = 10 ms, TC = 150 °C
250
tp = 10 ms, TC = 25 °C
496
tp = 10 ms, TC = 150 °C
312
Maximum junction temperature
175
°C
-40 to 150
°C
Repetitive peak reverse voltage
Operative temperature range under switching conditions
DocID029292 Rev 5
A
A2 s
7/18
Electrical ratings
A1C15S12M3
Table 11: Electrical characteristics of the bridge rectifiers
Symbol
1.4
Parameter
Test conditions
Min.
Typ.
Max.
IF = 15 A
-
1.0
1.4
IF = 15 A, TJ = 150 ˚C
-
0.9
VF
Forward voltage
IR
Reverse current
TJ = 150 ˚C, VR = 1600 V
-
1
RTHj-c
Thermal resistance junction
to case
Each diode
-
1.20
RTHc-h
Thermal resistance case to
heatsink
Each diode,
λgrease = 1 W/(m·°C)
-
1.15
Unit
V
mA
1.35
°C/W
°C/W
NTC
Table 12: NTC temperature sensor, considered as stand-alone
Symbol
Parameter
Test condition
Typ.
Max.
Unit
R25
Resistance
T = 25 °C
5
kΩ
R100
Resistance
T = 100 °C
493
Ω
ΔR/R
Deviation of R100
B25/50
B-constant
3375
K
B25/80
B-constant
3411
K
T
-5
Operating temperature
range
Figure 2: NTC resistance vs. temperature
8/18
Min.
-40
+5
150
%
°C
Figure 3: NTC resistance vs. temperature, zoom
DocID029292 Rev 5
A1C15S12M3
1.5
Electrical ratings
Package
Table 13: ACEPACK™ 1 package
Symbol
Parameter
Min.
Typ.
Max.
Unit
2500
V
Visol
Isolation voltage (AC voltage, t = 60 s)
Md
Screw mounting torque
40
80
Nm
Tstg
Storage temperature
-40
125
°C
CTI
Comparative tracking index
200
Ls
Stray inductance module P1 - EW loop
28.7
nH
Rs
Module lead resistance, terminal to chip
3.9
mΩ
DocID029292 Rev 5
9/18
Electrical characteristics curves
2
A1C15S12M3
Electrical characteristics curves
Figure 4: IGBT output characteristics (VGE = 15 V)
Figure 5: IGBT output characteristics (TJ = 150 °C)
Figure 6: IGBT transfer characteristics (VCE = 15 V)
Figure 7: Switching energy vs. gate resistance
Figure 8: Switching energy vs. collector current
Figure 9: IGBT reverse biased safe operating area
(RBSOA)
10/18
DocID029292 Rev 5
A1C15S12M3
Electrical characteristics curves
Figure 10: Diode forward characteristics
Figure 11: Diode reverse recovery energy vs. diode
current slope
Figure 12: Diode reverse recovery energy vs.
forward current
Figure 13: Diode reverse recovery energy vs. gate
resistance
Figure 14: Converter diode forward characteristics
Figure 15: IGBT thermal impedance
DocID029292 Rev 5
11/18
Electrical characteristics curves
A1C15S12M3
Figure 16: Inverter diode thermal impedance
12/18
DocID029292 Rev 5
A1C15S12M3
3
Test circuits
Test circuits
Figure 17: Test circuit for inductive load
switching
C
A
Figure 18: Gate charge test circuit
A
L=100 µH
G
E
B
B
3.3
µF
C
G
+
RG
1000
µF
VCC
D.U.T
E
-
AM01504v 1
Figure 19: Switching waveform
Figure 20: Diode reverse recovery waveform
DocID029292 Rev 5
13/18
Topology and pin description
4
A1C15S12M3
Topology and pin description
Figure 21: Electrical topology and pin description
P
P1
G5
G3
G1
B
T1
U
L1
L2
V
W
GB
L3
G6
G4
G2
T2
EU
NB
N
EV
EW
Figure 22: Package top view with CIB pinout
B
L1
L2
L3
G5
W
P
NB
P1
GB
T1
N
T2
G6
G3
EW
V
G4
EV
G1
G2
U
EU
GIPD270320151420FSR
14/18
DocID029292 Rev 5
A1C15S12M3
5
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID029292 Rev 5
15/18
Package information
5.1
A1C15S12M3
ACEPACK™ 1 CIB solder pins package information
Figure 23: ACEPACK™ 1 CIB solder pins package outline (dimensions are in mm)
32.00
25.60
B
22.40
P
NB
19.20
P1
GB
L1
L2
L3
G5
W
16.00
N
T1
G6
T2
G3
EW
V
G4
12.80
9.60
EV
G1
G2
U
EU
6.40
3.20
0.00
15.5±0.50
□0.64±0.03
12±0.35
0.00
6.40
12.80
16.00
19.20
25.60
3.2 BSC
0.2
33.8±0.3
28.1±0.2
2.3 REF
Section B-B
19.4±0.2
8.5
16.4±0.2
1.3±0.2
B
Detail A
53±0.1
42.5±0.2
41±0.2
48±0.3
36.8 REF
62.8±0.5
3.2 BSC
B
2.5±0.2
A
A
3.5 REF x45°
4.5±0.1
GADG110720171247SA_8569715_2
16/18
The lead size includes the thickness of the lead plating material.
Dimensions do not include mold protrusion.
Package dimensions do not include any eventual metal burrs.
DocID029292 Rev 5
A1C15S12M3
6
Revision history
Revision history
Table 14: Document revision history
Date
Revision
02-May-2016
1
Initial release.
2
Added Section 2: "Electrical characteristics curves" and Section 3: "Test
circuits". Updated Section 5.1: "ACEPACK™ 1 CIB solder pins package
information".
Minor text changes.
10-Mar-2017
26-Jul-2017
3
24-Aug-2017
4
05-Oct-2017
5
Changes
Datasheet promoted from production data to preliminary data.
Modified Table 2: "Absolute maximum ratings of the IGBTs, inverter
stage", Table 3: "Electrical characteristics of the IGBTs, inverter stage",
Table 6: "Absolute maximum ratings of the IGBT, brake stage", Table 7:
"Electrical characteristics of the IGBT, brake stage", Table 4: "Absolute
maximum ratings of the diode, inverter stage", Table 5: "Electrical
characteristics of the diode, inverter stage", Table 10: "Absolute
maximum ratings of the bridge rectifiers", Table 11: "Electrical
characteristics of the bridge rectifiers", Table 12: "NTC temperature
sensor, considered as stand-alone", Table 13: "ACEPACK™ 1
package".
Modified Figure 10: "IGBT thermal impedance" and.
Modified Figure 22: "Package top view with CIB pinout".
Modified Section 5: "Package information".
Minor text changes.
Updated Table 3: "Electrical characteristics of the IGBTs, inverter
stage", Table 5: "Electrical characteristics of the diode, inverter stage",
Table 7: "Electrical characteristics of the IGBT, brake stage", Table 9:
"Electrical characteristics of the diode, brake stage", Table 11:
"Electrical characteristics of the bridge rectifiers", Section 2: "Electrical
characteristics curves".
Minor text changes.
Updated Table 13: "ACEPACK™ 1 package", Figure 15: "IGBT thermal
impedance" and Figure 16: "Inverter diode thermal impedance".
Minor text changes.
DocID029292 Rev 5
17/18
A1C15S12M3
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