A1P35S12M3-F

A1P35S12M3-F Datasheet ACEPACK™ 1 sixpack topology, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC Features • ACEPACK™ 1 power module – DBC Cu Al2O3 Cu • Sixpack topology – 1200 V, 35 A IGBTs and diodes – Soft and fast recovery diode Integrated NTC • ACEPACK™ 1 Applications • • • Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A1P35S12M3-F Product summary Order code A1P35S12M3-F Marking A1P35S12M3-F VCES, IC ratings 1200 V, 35 A Package ACEPACK™ 1 Packing Press fit contact pins DS11636 - Rev 5 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com A1P35S12M3-F Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at TJ = 25 °C, unless otherwise specified. Table 1. Absolute maximum ratings of the IGBT Symbol Value Unit 1200 V Continuous collector current (TC = 100 °C) 35 A ICP Pulsed collector current (tp = 1 ms) 70 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 250 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C VCES IC (1) TJop Parameter Collector-emitter voltage (VGE = 0 V) Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol V(BR)CES VCE(sat) (terminal) Collector-emitter breakdown voltage Test conditions IC = 1 mA, VGE = 0 V ICES Collector cut-off current IGES Gate-emitter leakage current Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Total gate charge Max. 2.45 V 2.3 7 V VGE = 0 V, VCE = 1200 V 100 µA VCE = 0 V, VGE = ± 20 V ± 500 nA VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 960 V, IC = 35 A, VGE = ±15 V 5 Unit V 1.95 TJ = 150 ˚C VCE = VGE, IC = 1 mA Typ. 1200 VGE = 15 V, IC = 35 A, Gate threshold voltage td(on) Min. VGE = 15 V, IC= 35 A Collector-emitter saturation voltage VGE(th) Qg 6 2154 pF 164 pF 86 pF 163 nC Turn-on delay time VCC = 600 V, IC = 35 A, 122 ns Current rise time RG = 10 Ω, VGE = ±15 V, 17 ns Eon Turn-on switching energy di/dt = 1900 A/µs 1.21 mJ td(off) Turn-off delay time VCC = 600 V, IC = 35 A, 142 ns Current fall time RG = 10 Ω, VGE = ±15 V, 150 ns Turn-off switching energy dv/dt = 7800 V/µs 2.19 mJ tr (1) tf (2) Eoff DS11636 - Rev 5 Parameter page 2/16 A1P35S12M3-F Diode Symbol td(on) tr Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VCC = 600 V, IC = 35 A, 124 ns Current rise time RG = 10 Ω, VGE = ±15 V, 18 ns 1.8 mJ di/dt = 1533 A/µs, Eon(1) Turn-on switching energy td(off) Turn-off delay time VCC = 600 V, IC = 35 A, 142 ns Current fall time RG = 10 Ω, VGE = ±15 V, 256 ns 3.1 mJ tf Eoff(2) TJ = 150 °C dv/dt = 6700 V/µs, Turn-off switching energy TJ = 150 °C VCC ≤ 600 V, VGE ≤ 15 V, tSC Short-circuit withstand time RTHj-c Thermal resistance junctionto-case Each IGBT 0.55 RTHc-h Thermal resistance case-toheatsink Each IGBT, λgrease = 1 W/(m·°C) 0.70 TJstart ≤ 150 °C 10 µs 0.60 °C/W °C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. 1.2 Diode Limiting values at TJ = 25 °C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode Symbol Value Unit 1200 V Continuous forward current at TC = 100 °C 35 A IFP(1) Pulsed forward current (tp = 1 ms) 70 A TJMAX Maximum junction temperature 175 °C -40 to 150 °C VRRM IF TJop Parameter Repetitive peak reverse voltage Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 4. Electrical characteristics of the diode Symbol VF (terminal) DS11636 - Rev 5 Parameter Forward voltage Test conditions Min. Typ. Max. Unit IF = 35 A - 2.95 4.1 IF = 35 A, TJ = 150 ˚C - 2.3 - 140 ns V trr Reverse recovery time Qrr Reverse recovery charge IF = 35 A, VR = 600 V, - 2.62 µC Irrm Reverse recovery current VGE = ±15 V, di/dt = 1900 A/μs - 54 A Erec Reverse recovery energy - 1.2 mJ page 3/16 A1P35S12M3-F NTC Symbol 1.3 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy IF = 35 A, VR = 600 V, VGE = ±15 V, di/dt = 1533 A/μs, TJ = 150 °C Min. Typ. - 350 ns - 6.6 µC - 63 A - 3.2 mJ RTHj-c Thermal resistance junctionto-case Each diode - 0.8 RTHc-h Thermal resistance case-toheatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 Max. Unit 0.9 °C/W °C/W NTC Table 5. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions Min. Typ. Max. Unit R25 Resistance T = 25°C 5 kΩ R100 Resistance T = 100°C 493 Ω ΔR/R Deviation of R100 B25/50 B-constant 3375 K B25/80 B-constant 3411 K T -5 Operating temperature range -40 Figure 1. NTC resistance vs temperature R (Ω) +5 GADG260720171142NTC % 150 °C Figure 2. NTC resistance vs temperature, zoom R (Ω) GADG260720171151NTCZ 800 max 10 4 700 600 10 3 min 500 typ 400 10 2 DS11636 - Rev 5 0 25 50 75 100 125 TC (°C) 300 85 90 95 100 105 110 TC (°C) page 4/16 A1P35S12M3-F Package 1.4 Package Table 6. ACEPACK™ 1 package Symbol DS11636 - Rev 5 Parameter Min. Visol Isolation voltage (AC voltage, t = 60 s) Tstg Storage temperature -40 CTI Comparative tracking index 200 Typ. Max. Unit 2500 Vrms 125 °C Ls Stray inductance module P1 - EW loop 28.7 nH Rs Module single lead resistance, terminal-to-chip 3.9 mΩ page 5/16 A1P35S12M3-F Electrical characteristics (curves) 2 Electrical characteristics (curves) Figure 3. IGBT output characteristics (VGE = 15V, terminal) IC (A) 60 IGBT230820171146OC25 TJ = 25 °C IC (A) IGBT230820171148OC175 TJ = 150 °C 13 V 19 V 60 50 11 V 17 V 50 40 15 V 40 9V 30 30 20 20 10 0 0 Figure 4. IGBT output characteristics (TJ = 150 °C, terminal) 10 1 2 3 4 5 VCE (V) Figure 5. IGBT transfer characteristics (VCE = 15 V, terminal) IC (A) IGBT230820171148TCH 0 0 1 2 3 4 5 VCE (V) Figure 6. IGBT collector current vs case temperature IC (A) IGBT061120180836CCT 70 60 60 50 50 40 40 TJ = 150 °C 30 30 20 20 TJ = 25 °C 10 10 0 5 DS11636 - Rev 5 6 7 8 9 10 11 VGE (V) 0 0 VCC = 15 V, TJ ≤ 175 °C 25 50 75 100 125 150 TC (°C) page 6/16 A1P35S12M3-F Electrical characteristics (curves) Figure 7. Switching energy vs gate resistance E (mJ) 7 IGBT230820171149SLG VCC = 600 V, VGE = ± 15 V, IC = 35 A IGBT230820171150SLC VCC = 600 V, VGE = ± 15 V, RG = 10 Ω EOFF (TJ = 150 °C) 4 5 EOFF (TJ = 25 °C) EON (TJ = 25 °C) 3 4 3 EOFF (TJ = 150 °C) 2 EOFF (TJ = 25 °C) 2 EON (TJ = 150 °C) 1 1 0 0 E (mJ) 5 EON (TJ = 150 °C) 6 Figure 8. Switching energy vs collector current EON (TJ = 25 °C) 20 40 60 80 RG (Ω) Figure 9. IGBT reverse biased safe operating area (RBSOA) IC (A) IGBT230820171151FSOA 0 5 25 35 45 55 65 IC (A) Figure 10. Diode forward characteristics (terminal) IF (A) 70 60 60 50 50 40 40 15 IGBT230820171154DVF TJ = 150 °C 30 30 TJ = 25 °C 20 20 10 0 0 10 TJ = 125 °C, VGE = ±15 V, RG = 10 Ω 200 400 600 800 1000 1200 VCE (V) Figure 11. Diode reverse recovery energy vs diode current slope Erec (mJ) IGBT230820171431RRE 3.2 0 0 1 2 3 4 VF (V) Figure 12. Diode reverse recovery energy vs forward current Erec (mJ) IGBT230820171157RRE 4.2 TJ = 150 °C 2.8 3.6 2.4 TJ = 150 °C 3.0 2.0 2.4 1.6 1.2 1.8 0.8 0.4 400 DS11636 - Rev 5 TJ = 25 °C TJ = 25 °C 1.2 VCE = 600 V, IF = 35 A, VGE = ±15 V 800 1200 1600 VCE = 600 V, RG = 10 Ω, VGE = ±15 V di/dt (A/µs) 0.6 5 15 25 35 45 55 65 IF (A) page 7/16 A1P35S12M3-F Electrical characteristics (curves) Figure 13. Diode reverse recovery energy vs gate resistance Erec (mJ) Figure 14. Inverter diode thermal impedance Zth(°C/W) IGBT230820171158RRE IGBT230820171500MT 3.2 2.8 Zth (typ.) JH TJ = 150 °C 2.4 10 0 2.0 Zth (max.) JC 1.6 JC 1.2 TJ = 25 °C i RC - Foster thermal network 1 2 3 4 0.1372 0.4030 0.2525 0.1034 τi(s) 0.0009 JH 0.8 0.4 0 ri (˚C/W) i 10 VCE = 600 V, IF = 35 A, VGE = ±15 V 20 40 60 80 RG (Ω) ri (˚C/W) τi(s) -1 10 -3 10 -2 0.0090 0.0513 RC - Foster thermal network 1 2 3 0.3253 4 0.1497 0.4233 0.7016 0.2714 0.0011 0.0154 0.0919 0.4067 10 -1 10 0 t (s) Figure 15. IGBT thermal impedance Zth(°C/W) IGBT230820171153MT Zth (typ.) JH 10 0 Zth (max.) JC JC i ri (˚C/W) τi(s) JH i 10 -1 10 -3 DS11636 - Rev 5 ri (˚C/W) τi(s) 10 -2 10 -1 RC - Foster thermal network 1 2 3 4 0.0619 0.3073 0.1502 0.0784 0.0005 0.0103 0.0613 0.3556 RC - Foster thermal network 1 2 3 4 0.0604 0.3088 0.5759 0.3016 0.0005 0.0152 0.0939 0.3964 10 0 t (s) page 8/16 A1P35S12M3-F Test circuits 3 Test circuits Figure 16. Test circuit for inductive load switching C A Figure 17. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 19. Diode reverse recovery waveform Figure 18. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 25 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS11636 - Rev 5 page 9/16 A1P35S12M3-F Topology and pin description 4 Topology and pin description Figure 20. Electrical topology and pin description P G3 G1 G5 T1 U V W T2 G4 G2 E’U EU E’V G6 EV E’W EW Figure 21. Package top view with sixpack pinout DS11636 - Rev 5 page 10/16 A1P35S12M3-F Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS11636 - Rev 5 page 11/16 A1P35S12M3-F ACEPACK™ 1 sixpack press fit pins package information 5.1 ACEPACK™ 1 sixpack press fit pins package information Figure 22. ACEPACK™ 1 sixpack press fit pins package outline (dimensions are in mm) 32.00 E'W EW EV G4 E'V EU G6 28.80 E'U 25.60 G2 T1 T2 22.40 P 16.00 P 12.80 W U W U V V G3 G5 6.40 G1 3.20 0.00 16.4±0.50 12±0.35 0.00 3.20 6.40 9.60 16.00 19.20 22.40 25.60 3.2 BSC 33.8±0.3 28.1±0.2 Section B-B 8.5 16.4±0.2 B 53±0.1 42.5±0.2 41±0.2 62.8±0.5 48±0.3 B 3.2 BSC 36.8 REF 2.3 REF 19.4±0.2 1.3±0.2 Detail A 2.5±0.2 A A 3.5 REF x45° 4.5±0.1 GADG260220181307MT_8569715_4 • • • DS11636 - Rev 5 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. page 12/16 A1P35S12M3-F ACEPACK™ 1 sixpack press fit pins package information Figure 23. ACEPACK™ 1 sixpack press fit pins recommended PCB holes layout (dimensions are in mm) GADG260220181409MT_8569715_4 DS11636 - Rev 5 page 13/16 A1P35S12M3-F Revision history Table 7. Document revision history Date Revision 04-May-2016 1 Changes Initial release. Updated title, features, description and Table 1: "Device summary" in cover page. Updated Section 1: "Electrical ratings". 24-Aug-2017 2 Added Section 2: "Electrical characteristics curves", Section 3: "Test circuits", Section 4: "Topology and pin description" and Section 5: "Package information". Minor text changes. 03-Oct-2017 3 Updated Table 7: "ACEPACK™ 1 package" and Section 2: "Electrical characteristics curves". Minor text changes. Removed maturity status indication from cover page. The document status is production data. 02-Mar-2018 4 Updated silhouette in cover page and Section 5.1 ACEPACK™ 1 sixpack press fit pins package information. Minor text changes. 14-Nov-2018 DS11636 - Rev 5 5 Added Figure 6. IGBT collector current vs case temperature. Minor text changes page 14/16 A1P35S12M3-F Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.3 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.4 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5.1 ACEPACK™ 1 sixpack press fit pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS11636 - Rev 5 page 15/16 A1P35S12M3-F IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS11636 - Rev 5 page 16/16