A1P35S12M3

A1P35S12M3 ACEPACK™ 1 - sixpack topology - 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet - production data Features    ACEPACK™ 1 power module  DBC Cu Al2O3 Cu Sixpack topology  1200 V, 35 A IGBTs and diodes  VCE(sat): 1.95 V @ IC = 35 A  Soft and fast recovery diode Integrated NTC Applications ACEPACK™ 1 Figure 1: Internal electrical schematic    Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Table 1: Device summary Order code Marking Package Leads type A1P35S12M3 A1P35S12M3 ACEPACK™ 1 Solder contact pins October 2017 DocID029299 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents A1P35S12M3 Contents 1 Electrical ratings ............................................................................. 3 1.1 IGBT .................................................................................................. 3 1.2 Diode ................................................................................................. 4 1.3 NTC ................................................................................................... 5 1.4 Package ............................................................................................ 6 2 3 Electrical characteristics curves .................................................... 7 Test circuits ..................................................................................... 9 4 Topology and pin description ...................................................... 10 5 Package information ..................................................................... 11 5.1 6 2/13 ACEPACK™ 1 sixpack solder pins package information ................ 11 Revision history ............................................................................ 12 DocID029299 Rev 3 A1P35S12M3 Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at Tj = 25 °C, unless otherwise specified. Table 2: Absolute maximum ratings of the IGBT Symbol VCES IC Parameter Value Unit Collector-emitter voltage (VGE = 0) 1200 V Continuous collector current (Tc = 100 °C) 35 A ICP(1) Pulsed collector current 70 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation 250 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C TJop Operative temperature range under switching conditions Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Electrical characteristics of the IGBT Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 7 V ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ±500 nA Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge td(on) Turn-on delay time tr Eon Test conditions IC = 1 mA, VGE = 0 V td(off) tf Eoff(2) 2.3 Turn-off delay time Current fall time Turn-off switching energy VCC = 600 V, IC = 35 A, RG = 10 Ω, VGE = ±15 V, dv/dt = 7800 V/µs; DocID029299 Rev 3 5 Unit V 1.95 VCC = 600 V, IC = 35 A, RG = 10 Ω, VGE = ±15 V, di/dt = 1900 A/µs Max. 1200 VGE = 15 V, IC = 35 A, TJ = 150 ˚C VCC = 960 V, IC = 35 A, VGE = ±15 V Turn-on switching energy Typ. VGE = 15 V, IC= 35 A VCE = 25 V, f = 1 MHz, VGE = 0 V Current rise time (1) Min. 6 2.45 V 2154 pF 164 pF 86 pF 163 nC 122 ns 17 ns 1.21 mJ 142 ns 150 ns 2.19 mJ 3/13 Electrical ratings A1P35S12M3 Symbol td(on) Parameter Test conditions Turn-on delay time tr Current rise time Eon Turn-on switching energy td(off) Turn-off delay time Min. Typ. Max. Unit VCC = 600 V, IC = 35 A, RG = 10 Ω, VGE = ±15 V, di/dt = 1533 A/µs, TJ = 150 °C 124 ns 18 ns 1.8 mJ 142 ns 256 ns 3.1 mJ Eoff Turn-off switching energy VCC = 600 V, IC = 35 A, RG = 10 Ω, VGE = ±15 V, dv/dt = 6700 V/µs, TJ = 150 °C tSC Short-circuit withstand time VCC ≤ 600 V, VGE ≤ 15 V, TJstart ≤ 150 °C RTHj-c Thermal resistance junction to case Each IGBT 0.55 RTHc-h Thermal resistance case to heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.70 °C/W Value Unit 1200 V tf Current fall time 10 µs 0.60 °C/W Notes: 1.2 (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Diode Table 4: Absolute maximum ratings of the diode Symbol VRRM Parameter Repetitive peak reverse voltage IF Continuous forward current at (TC = 100 °C) 35 A IFP(1) Pulsed forward current 70 A TJMAX Maximum junction temperature 175 °C -40 to 150 °C Operative temperature range under switching conditions TJop Notes: (1)Pulse width limited by maximum junction temperature. Table 5: Electrical characteristics of the diode Symbol 4/13 Parameter VF Forward voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy Test conditions Min. Typ. Max. IF = 35 A - 2.95 4.1 IF = 35 A, TJ = 150 ˚C - 2.3 - 140 ns - 2.62 µC - 54 A - 1.2 mJ IF = 35 A, VR = 600 V, VGE = ±15 V, di/dt = 1900 A/μs DocID029299 Rev 3 Unit V A1P35S12M3 Electrical ratings Symbol 1.3 Parameter trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy Test conditions Min. Typ. - 350 ns - 6.6 µC - 63 A - 3.2 mJ IF = 35 A, VR = 600 V, VGE = ±15 V, di/dt = 1533 A/μs, TJ = 150 °C RTHj-c Thermal resistance junction to case Each diode - 0.8 RTHc-h Thermal resistance case to heatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 Max. 0.9 Unit °C/W °C/W NTC Table 6: NTC temperature sensor, considered as stand-alone Symbol Parameter Test condition Min. Typ. Max. Unit R25 Resistance T = 25°C 5 kΩ R100 Resistance T = 100°C 493 Ω ΔR/R Deviation of R100 B25/50 B-constant 3375 K B25/80 B-constant 3411 K T -5 Operating temperature range Figure 2: NTC resistance vs. temperature -40 +5 150 % °C Figure 3: NTC resistance vs. temperature, zoom DocID029299 Rev 3 5/13 Electrical ratings 1.4 A1P35S12M3 Package Table 7: ACEPACK™ 1 package Symbol 6/13 Parameter Min. Typ. Max. Unit 2500 V Visol Isolation voltage (AC voltage, t = 60 s) Md Screw mounting torque 40 80 Nm Tstg Storage temperature -40 125 °C CTI Comparative tracking index 200 Ls Stray inductance module P1 - EW loop 28.7 nH Rs Module lead resistance, terminal to chip 3.9 mΩ DocID029299 Rev 3 A1P35S12M3 2 Electrical characteristics curves Electrical characteristics curves Figure 4: IGBT output characteristics (VGE = 15 V) Figure 5: IGBT output characteristics (TJ = 150 °C) Figure 6: IGBT transfer characteristics (VCE = 15 V) Figure 7: Switching energy vs. gate resistance Figure 8: Switching energy vs. collector current Figure 9: IGBT reverse biased safe operating area (RBSOA) DocID029299 Rev 3 7/13 Electrical characteristics curves A1P35S12M3 Figure 10: Diode forward characteristics Figure 11: Diode reverse recovery energy vs. diode current slope Figure 12: Diode reverse recovery energy vs. forward current Figure 13: Diode reverse recovery energy vs. gate resistance Figure 14: Inverter diode thermal impedance Figure 15: IGBT thermal impedance 8/13 DocID029299 Rev 3 A1P35S12M3 3 Test circuits Test circuits Figure 17: Gate charge test circuit Figure 16: Test circuit for inductive load switching C A A L=100 µH G E B B 3.3 µF C G + RG 1000 µF VCC D.U.T E - AM01504v 1 Figure 18: Switching waveform Figure 19: Diode reverse recovery waveform DocID029299 Rev 3 9/13 Topology and pin description 4 A1P35S12M3 Topology and pin description Figure 20: Electrical topology and pin description Figure 21: Package top view with sixpack pinout 10/13 DocID029299 Rev 3 A1P35S12M3 5 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.1 ACEPACK™ 1 sixpack solder pins package information Figure 22: ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm)    The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. DocID029299 Rev 3 11/13 Revision history 6 A1P35S12M3 Revision history Table 8: Document revision history Date Revision 02-May-2016 1 Initial release. 2 Updated title, features, description and Table 1: "Device summary" in cover page. Updated Section 1: "Electrical ratings". Added Section 2: "Electrical characteristics curves", Section 3: "Test circuits", Section 4: "Topology and pin description" and Section 5: "Package information". Minor text changes. 3 Document status promoted from preliminary data to production data. Updated Table 7: "ACEPACK™ 1 package" and Section 2: "Electrical characteristics curves". Minor text changes. 24-Aug-2017 02-Oct-2017 12/13 Changes DocID029299 Rev 3 A1P35S12M3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID029299 Rev 3 13/13