A1P50S65M2

A1P50S65M2 Datasheet ACEPACK™ 1 sixpack topology, 650 V, 50 A, trench gate field‑stop M series IGBT with soft diode and NTC Features • ACEPACK™ 1 power module – DBC Cu Al2O3 Cu • Sixpack topology – 650 V, 50 A IGBTs and diodes – Soft and fast recovery diode Integrated NTC • ACEPACK™ 1 Applications • • • Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A1P50S65M2 Product summary Order code A1P50S65M2 Marking A1P50S65M2 Package ACEPACK™ 1 Leads type Solder contact pins DS12332 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com A1P50S65M2 Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at TJ = 25 °C, unless otherwise specified. Table 1. Absolute maximum ratings of the IGBT Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current (TC = 100 °C) 50 A ICP Pulsed collector current (tp = 1 ms) 100 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 208 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C VCES IC (1) TJop Parameter Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) (terminal) Collector-emitter saturation voltage IC = 1 mA, VGE = 0 V Collector cut-off current IGES Gate-emitter leakage current Cies Input capacitance Reverse transfer capacitance Qg Total gate charge td(on) V V VGE = 0 V, VCE = 650 V 100 µA VCE = 0 V, VGE = ± 20 V ± 500 nA VGE = 0 V VCC = 520 V, IC = 50 A, VGE = ±15 V 6 2.3 7 VCE = 25 V, f = 1 MHz, 5 Unit V 2.3 ICES Max. 650 VGE = 15 V, IC = 50 A, TJ = 150 ˚C VCE = VGE, IC = 1 mA Cres Typ. 1.95 Gate threshold voltage Output capacitance Min. VGE = 15 V, IC= 50 A VGE(th) Coes 4150 pF 170 pF 80 pF 150 nC Turn-on delay time VCC = 300 V, IC = 50 A, 143 ns Current rise time RG = 6.8 Ω, VGE = ±15 V, 16.5 ns Eon(1) Turn-on switching energy di/dt = 2400 A/µs 0.140 mJ td(off) Turn-off delay time VCC = 300 V, IC = 50 A, 112 ns Current fall time RG = 6.8 Ω, VGE = ±15 V, 149 ns Turn-off switching energy dv/dt = 7600 V/µs 1.45 mJ tr tf Eoff(2) DS12332 - Rev 3 Test conditions page 2/14 A1P50S65M2 Diode Symbol td(on) Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VCC = 300 V, IC = 50 A, 148 ns Current rise time RG = 6.8 Ω, VGE = ±15 V, 19.2 ns Eon Turn-on switching energy di/dt = 2062 A/µs, TJ = 150 °C 0.311 mJ td(off) Turn-off delay time VCC = 300 V, IC = 50 A, 110 ns Current fall time RG = 6.8 Ω, VGE = ±15 V, 221 ns Turn-off switching energy dv/dt = 5800 V/µs, TJ = 150 °C 1.98 mJ Short-circuit withstand time VCC ≤ 360 V, VGE ≤ 15 V, tr (1) tf Eoff(2) tSC 6 TJstart ≤ 150 °C µs RTHj-c Thermal resistance junction-to-case Each IGBT 0.65 RTHc-h Thermal resistance caseto-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 0.72 °C/W °C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. 1.2 Diode Limiting values at TJ = 25 °C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode Symbol Value Unit Repetitive peak reverse voltage 650 V Continuous forward current at (TC = 100 °C) 50 A IFP Pulsed forward current (tp = 1 ms) 100 A TJMAX Maximum junction temperature 175 °C -40 to 150 °C VRRM IF (1) TJop Parameter Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 4. Electrical characteristics of the diode Symbol VF (terminal) DS12332 - Rev 3 Parameter Forward voltage Test conditions Min. Typ. Max. Unit IF = 50 A - 1.85 2.65 IF = 50 A, TJ = 150 ˚C - 1.65 - 142 ns V trr Reverse recovery time Qrr Reverse recovery charge IF = 50 A, VR = 300 V, - 1.87 µC Irrm Reverse recovery current VGE = ±15 V, di/dt = 2400 A/μs - 40 A Erec Reverse recovery energy - 0.41 mJ - 260 ns - 5.2 µC - 58 A - 1.32 mJ trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy IF = 50 A, VR = 300 V, VGE = ±15 V, di/dt = 2062 A/μs, TJ = 150 °C page 3/14 A1P50S65M2 NTC Symbol 1.3 Parameter Test conditions Min. Typ. Max. Unit 1.1 °C/W RTHj-c Thermal resistance junction-to-case Each diode - 1.0 RTHc-h Thermal resistance caseto-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.9 °C/W NTC Table 5. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions Min. Typ. Max. Unit R25 Resistance T = 25°C 5 kΩ R100 Resistance T = 100°C 493 Ω ΔR/R Deviation of R100 B25/50 B-constant 3375 K B25/80 B-constant 3411 K T -5 Operating temperature range -40 Figure 1. NTC resistance vs temperature R (Ω) +5 GADG260720171142NTC % 150 °C Figure 2. NTC resistance vs temperature, zoom R (Ω) GADG260720171151NTCZ 800 max 10 4 700 600 10 3 min 500 typ 400 10 2 1.4 0 25 50 75 100 125 TC (°C) 300 85 90 95 100 105 110 TC (°C) Package Table 6. ACEPACK™ 1 package Symbol DS12332 - Rev 3 Parameter Min. Visol Isolation voltage (AC voltage, t = 60 s) Tstg Storage temperature -40 CTI Comparative tracking index 200 Typ. Max. Unit 2500 Vrms 125 °C Ls Stray inductance module P1 - EW loop 28.7 nH Rs Module single lead resistance, terminal-to-chip 3.9 mΩ page 4/14 A1P50S65M2 Electrical characteristics (curves) 2 Electrical characteristics (curves) Figure 3. IGBT output characteristics (VGE = 15 V, terminal) Ic (A) 80 IGBT111020170929TCH Figure 4. IGBT output characteristics (TJ = 150 °C, terminal) IC (A) 90 IGBT101020171341OC25 19 V 17 V 80 TJ = 25 °C 15 V 70 60 13 V 11 V 60 TJ = 150 °C 50 40 40 30 20 VGE = 9 V 20 10 0 0 1 2 3 4 VCE (V) Figure 5. IGBT transfer characteristics (VCE = 15 V, terminal) IC (A) IGBT101020171339OC25 0 0 1 2 3 4 VCE (V) Figure 6. IGBT collector current vs case temperature IC (A) IGBT051120181512CCT 100 80 80 TJ = 25 °C 60 60 40 40 TJ = 150 °C 20 20 0 5 DS12332 - Rev 3 6 7 8 9 10 11 12 VGE (V) 0 0 VCC = 15 V, TJ ≤ 175 °C 25 50 75 100 125 150 TC (°C) page 5/14 A1P50S65M2 Electrical characteristics (curves) Figure 7. Switching energy vs gate resistance E (mJ) IGBT101020171348SLG VCC = 300 V, IC = 50 A, VGE = ±15 V 4.0 3.0 EON (TJ = 150 °C) EOFF (TJ = 150 °C) Figure 8. Switching energy vs collector current IGBT101020171351SLC E (mJ) VCC = 300 V, RG = 6.8 Ω, VGE = ±15 V EOFF (TJ = 150 °C) 3 EON (TJ = 25 °C) EOFF (TJ = 25 °C) 2 2.0 EOFF (TJ = 25 °C) 1.0 0 0 EON (TJ = 150°C) 1 EON (TJ = 25 °C) 20 40 60 80 RG (Ω) Figure 9. IGBT reverse biased safe operating area (RBSOA) IGBT101020171353OC25 IC (A) TJ = 125 °C, VGE = ±15 V, RG = 6.8 Ω 0 10 30 50 70 90 IC (A) Figure 10. Diode forward characteristics IGBT101020171356DVF IF (A) 80 50 40 TJ = 150 °C 60 30 40 20 TJ = 25 °C 20 10 0 0 100 200 300 400 500 600 VCE (V) Figure 11. Diode reverse recovery energy vs diode current slope IGBT101020171356OC25 Erec (mJ) VCE = 300 V, VGE = ±15 V, IF = 50 A 1.2 TJ = 150 °C 0.8 1.2 1.6 2.0 VF (V) Figure 12. Diode reverse recovery energy vs forward current IGBT101020171402RRE Erec (mJ) VCE = 300 V, VGE = ±15 V, RG = 6.8 Ω TJ = 150 °C 1.2 0.6 0.8 0.3 DS12332 - Rev 3 0.4 1.6 0.9 0 200 0 0 0.4 TJ = 25 °C 750 1300 1850 di/dt (A/µs) 0 10 TJ = 25 °C 30 50 70 90 IF (A) page 6/14 A1P50S65M2 Electrical characteristics (curves) Figure 13. Diode reverse recovery energy vs gate resistance Erec (mJ) Figure 14. Inverter diode thermal impedance Zth (°C/W) IGBT101020171406RRE VCE = 300 V, VGE = ±15 V, IF = 50 A IGBT111020170844MT 1.2 Zth(typ.)JH TJ = 150 °C 0.9 100 Zth(max.)JC 0.6 JC i ri (˚C/W) τi(s) TJ = 25 °C 0.3 JH i ri (˚C/W) 0 0 20 40 60 80 10-1 10-3 RG (Ω) τi(s) 10-2 RC - Foster thermal network 1 2 3 4 0.1746 0.5169 0.2851 0.1197 0.0008 0.0074 0.0368 0.2601 RC - Foster thermal network 1 2 3 4 0.2091 0.5735 0.7511 0.3615 0.0010 10-1 0.0116 0.0729 100 0.3310 t (s) Figure 15. IGBT thermal impedance Zth (°C/W) IGBT111020170846MT Zth(typ.)JH 10 0 Zth(max.)JC JC i ri (˚C/W) τi(s) JH i 10 -1 10 -3 DS12332 - Rev 3 ri (˚C/W) τi(s) 10 -2 RC - Foster thermal network 1 2 3 4 0.0718 0.2858 0.2471 0.1130 0.0002 0.0072 0.0392 0.2850 RC - Foster thermal network 1 2 3 4 0.0808 0.3144 0.6701 0.3713 0.0003 0.0113 0.0752 0.3492 10 -1 10 0 t (s) page 7/14 A1P50S65M2 Test circuits 3 Test circuits Figure 16. Test circuit for inductive load switching C A Figure 17. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 19. Diode reverse recovery waveform Figure 18. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 25 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS12332 - Rev 3 page 8/14 A1P50S65M2 Topology and pin description 4 Topology and pin description Figure 20. Electrical topology and pin description P G3 G1 G5 T1 U V W T2 G4 G2 E’U EU E’V G6 EV E’W EW Figure 21. Package top view with sixpack pinout DS12332 - Rev 3 page 9/14 A1P50S65M2 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS12332 - Rev 3 page 10/14 A1P50S65M2 ACEPACK™ 1 sixpack solder pins package information 5.1 ACEPACK™ 1 sixpack solder pins package information Figure 22. ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm) 32.00 E'W EW EV G4 E'V EU G6 28.80 E'U 25.60 G2 T1 T2 22.40 P 16.00 P 12.80 W U W V V G3 G5 6.40 U G1 3.20 0.00 15.5±0.50 □0.64±0.03 12±0.35 0.00 6.40 3.20 9.60 16.00 19.20 22.40 25.60 3.2 BSC 33.8±0.3 28.1±0.2 2.3 REF Section B-B 19.4±0.2 8.5 16.4±0.2 1.3±0.2 B Detail A 53±0.1 42.5±0.2 41±0.2 48±0.3 36.8 REF 62.8±0.5 3.2 BSC B 2.5±0.2 A A 3.5 REF x45° 4.5±0.1 GADG240820170900MT_8569715_4 • • • DS12332 - Rev 3 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. page 11/14 A1P50S65M2 Revision history Table 7. Document revision history Date Revision 11-Oct-2017 1 Changes Initial release. Updated features and removed maturity status indication from cover page. 16-Feb-2018 2 Updated Figure 13. Inverter diode thermal impedance and Figure 14. IGBT thermal impedance. Updated Figure 21. ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm). Minor text changes 14-Nov-2018 DS12332 - Rev 3 3 Added Figure 6. IGBT collector current vs case temperature. Minor text changes page 12/14 A1P50S65M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.3 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.4 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 5.1 ACEPACK™ 1 sixpack solder pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12332 - Rev 3 page 13/14 A1P50S65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12332 - Rev 3 page 14/14