A2C25S12M3-F

A2C25S12M3-F ACEPACK™ 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet - production data Features    ACEPACK™ 2 power module  DBC Cu Al2O3 Cu Converter inverter brake topology  1600 V, very low drop rectifiers for converter  1200 V, 25 A IGBTs and diodes  VCE(sat): 1.95 V @ IC = 25 A  Soft and fast recovery diode Integrated NTC Figure 1: Internal electrical schematic Applications   Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2 package with NTC, integrating the advanced trench gate fieldstop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Table 1: Device summary Order code Marking Package Leads type A2C25S12M3-F A2C25S12M3-F ACEPACK™ 2 Press fit pins October 2017 DocID031094 Rev 1 This is information on a product in full production. 1/20 www.st.com Contents A2C25S12M3-F Contents 1 Electrical ratings ............................................................................. 3 1.1 1.2 Inverter stage .................................................................................... 3 1.1.1 IGBTs.................................................................................................. 3 1.1.2 Diode .................................................................................................. 5 Brake stage ....................................................................................... 6 1.2.1 IGBT ................................................................................................... 6 1.2.2 Diode .................................................................................................. 8 1.3 Converter stage................................................................................. 9 1.4 NTC................................................................................................... 9 1.5 Package .......................................................................................... 10 2 Electrical characteristics curves .................................................. 11 3 Test circuits ................................................................................... 14 4 Topology and pin description ...................................................... 15 5 Package information ..................................................................... 16 5.1 6 2/20 ACEPACK™ 2 CIB press fit pins package information ................... 17 Revision history ............................................................................ 19 DocID031094 Rev 1 A2C25S12M3-F Electrical ratings 1 Electrical ratings 1.1 Inverter stage Limiting values at Tj= 25 °C, unless otherwise specified. 1.1.1 IGBTs Table 2: Absolute maximum ratings of the IGBTs, inverter stage Symbol VCES IC Description Value Unit Collector-emitter voltage (VGE = 0) 1200 V 25 A Continuous collector current at Tc = 100 °C ICP(1) Pulsed collector current (tP = 1 ms) 50 A VGE Gate-emitter voltage ± 20 V PTOT Total power dissipation IGBT (TJMAX = 175 °C) 197 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C TJop Operative temperature range under switching conditions Notes: (1)Pulse width limited by maximum junction temperature. DocID031094 Rev 1 3/20 Electrical ratings A2C25S12M3-F Table 3: Electrical characteristics of the IGBTs, inverter stage Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current Cies Input capacitance Output capacitance Cres Reverse transfer capacitance Qg Total gate charge td(on) Turn-on delay time Eon(1) Turn-on switching energy td(off) Turn-off delay time tf Current fall time Eoff(2) Turn-off switching energy td(on) Turn-on delay time tr Current rise time Eon Turn-on switching energy td(off) Turn-off delay time tf Current fall time 1.95 VGE = 15 V, IC = 25 A, TJ = 150 ˚C 2.3 2.45 V V V VGE = 0 V, VCE = 1200 V 100 μA VCE = 0 V, VGE = ±20 V ±500 nA VCC = 600 V, IC = 25 A, RG = 15 Ω, VGE = ±15 V, di/dt = 1290 A/µs VCC = 600 V, IC = 25 A, RG = 15 Ω, VGE = ±15 V, dv/dt = 9600 V/µs; VCC = 600 V, IC = 25 A, RG = 15 Ω, VGE = ±15 V, di/dt = 1274 A/µs, TJ = 150 °C VCC = 600 V, IC = 25 A, RG = 15 Ω, VGE = ±15 V,dv/dt = 8200 V/µs, TJ = 150 °C 6 1550 pF 130 pF 65 pF 80 nC 109 ns 15.3 ns 0.97 mJ 109 ns 132 ns 1.36 mJ 109 ns 16.2 ns 1.49 mJ 122 ns 216 ns 1.85 mJ Turn-off switching energy tSC Short-circuit withstand time VCC ≤ 600V, VGE ≤ 15 V, Tjstart ≤ 150 °C RTHj-c Thermal resistance junction to case each IGBT 0.69 RTHc-h Thermal resistance case to heatsink each IGBT, λgrease = 1 W/(m·°C) 0.79 Including the reverse recovery of the diode. (2)Including Unit 7 Notes: 4/20 5 Eoff (1) Max. V VGE = 15 V, IC= 25 A VCC = 960 V, IC = 25 A, VGE = ±15 V Current rise time Typ. 1200 VCE = 25 V, f = 1 MHz, VGE = 0 V Coes tr IC = 1 mA, VGE = 0 V Min. also the tail of the collector current. DocID031094 Rev 1 10 µs 0.76 °C/W °C/W A2C25S12M3-F 1.1.2 Electrical ratings Diode Limiting values at Tj= 25 °C, unless otherwise specified. Table 4: Absolute maximum ratings of the diode, inverter stage Symbol VRRM Parameter Repetitive peak reverse voltage IF Value Unit 1200 V Continuous forward current at (TC = 100 °C) 25 A IFP(1) Pulsed forward current 50 A TJMAX Maximum junction temperature 175 °C -40 to 150 °C TJop Operative temperature range under switching conditions Notes: (1)Pulse width limited by maximum junction temperature. Table 5: Electrical characteristics of the diode, inverter stage Symbol Parameter Test conditions Min. Typ. Max. IF = 25 A - 2.95 4.1 IF = 25 A, TJ = 150 ˚C - 2.3 Unit VF Forward voltage trr Reverse recovery time - 190 ns Qrr Reverse recovery charge - 1.53 µC Irrm Reverse recovery current - 29 A Erec Reverse recovery energy - 0.74 mJ trr Reverse recovery time - 378 ns Qrr Reverse recovery charge - 4.43 µC Irrm Reverse recovery current - 41 A Erec Reverse recovery energy - 2.33 mJ IF = 25 A, VR = 600 V, VGE = ±15 V, diF/dt = 1290 A/μs IF = 25 A, VR = 600 V, VGE = ±15 V, diF/dt = 1274 A/μs, TJ = 150 °C RTHj-c Thermal resistance junction to case Each diode - 1.05 RTHc-h Thermal resistance case to heatsink Each diode, λgrease = 1 W/(m·°C) - 0.85 DocID031094 Rev 1 1.16 V °C/W °C/W 5/20 Electrical ratings 1.2 A2C25S12M3-F Brake stage Limiting values at Tj= 25 °C, unless otherwise specified. 1.2.1 IGBT Table 6: Absolute maximum ratings of the IGBT, brake stage Symbol VCES IC Parameter Value Unit Collector-emitter voltage (VGE = 0) 1200 V 25 A Continuous collector current (Tc = 100 °C) ICP(1) Pulsed collector current 50 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation 197 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C TJop Operative temperature range under switching conditions Notes: (1)Pulse 6/20 width limited by maximum junction temperature. DocID031094 Rev 1 A2C25S12M3-F Electrical ratings Table 7: Electrical characteristics of the IGBT, brake stage Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE(th) Gate threshold voltage VCE = VGE, IC = 1mA ICES Collector cut-off current IGES Gate-emitter leakage current Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge td(on) Turn-on delay time tr Eon IC = 1 mA, VGE = 0 V tf Turn-on switching energy Turn-off delay time td(on) tr Turn-off switching energy Turn-on delay time Current rise time Eon Turn-on switching energy td(off) Turn-off delay time tf Current fall time Typ. Max. 1200 1.95 VGE = 15 V, IC = 25 A, TJ = 150 ˚C 2.3 5 Unit V VGE = 15 V, IC = 25 A V VGE = 0 V, VCE = 1200 V 100 µA VCE = 0 V, VGE = ±20 V ± 500 nA VCC = 600 V, IC = 25 A, RG = 15 Ω, VGE = ±15 V, di/dt = 1290 A/µs VCC = 600 V, IC = 25 A, RG = 15 Ω, VGE = ±15 V, dv/dt = 9600 V/µs; VCC = 600 V, IC = 25 A, RG = 15 Ω, VGE = ±15 V, di/dt = 1274 A/µs, TJ = 150 °C VCC = 600 V, IC = 25 A, RG = 15 Ω, VGE = ±15 V, dv/dt = 8200 V/µs, TJ = 150 °C 6 V 7 VCC = 960 V, IC = 25 A, VGE = ±15 V Current fall time (2) Min. VCE = 25 V, f = 1 MHz, VGE = 0 V Current rise time (1) td(off) Eoff Test conditions 1550 pF 130 pF 65 pF 80 nC 109 ns 15.3 ns 0.97 mJ 109 ns 132 ns 1.36 mJ 109 ns 16.2 ns 1.49 mJ 122 ns 216 ns 1.85 mJ Eoff Turn-off switching energy tSC Short-circuit withstand time VCC ≤ 600 V, VGE≤ 15 V, TJstart ≤ 150 °C RTHj-c Thermal resistance junction to case Each IGBT 0.69 RTHc-h Thermal resistance case to heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 10 µs 0.76 °C/W °C/W Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. DocID031094 Rev 1 7/20 Electrical ratings 1.2.2 A2C25S12M3-F Diode Table 8: Absolute maximum ratings of the diode, brake stage Symbol VRRM Parameter Repetitive peak reverse voltage IF Value Unit 1200 V 25 A Continuous forward current at (TC = 100 °C) IFP(1) Pulsed forward current 50 A TJMAX Maximum junction temperature 175 °C -40 to 150 °C TJop Operative temperature range under switching conditions Notes: (1)Pulse width limited by maximum junction temperature. Table 9: Electrical characteristics of the diode, brake stage Symbol 8/20 Parameter Test conditions Min. Typ. Max. Unit IF = 25 A - 2.95 IF = 25 A, TJ = 150 ˚C - 2.3 - 190 ns - 1.53 µC - 29 A VF Forward voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy - 0.74 mJ trr Reverse recovery time - 378 ns Qrr Reverse recovery charge - 4.43 µC Irrm Reverse recovery current - 41 A Erec Reverse recovery energy - 2.33 mJ IF = 25 A, VR = 600 V, VGE = ±15 V, di/dt = 1290 A/μs IF = 25 A, VR = 600 V, VGE = ±15 V, di/dt = 1274 A/μs, TJ = 150 °C RTHj-c Thermal resistance junction to case Each diode - 1.05 RTHc-h Thermal resistance case to heatsink Each diode, λgrease = 1 W/(m·°C) - 0.85 DocID031094 Rev 1 V 1.16 °C/W °C/W A2C25S12M3-F 1.3 Electrical ratings Converter stage Limiting values at Tj= 25 °C, unless otherwise specified. Table 10: Absolute maximum ratings of the bridge rectifiers Symbol VRRM IF IFSM I2 t TJMAX TJop Description Value Unit 1600 V RMS forward current 50 A Forward surge current tp = 10 ms, TC = 25 °C 450 Forward surge current tp = 10 ms, TC = 150 °C 365 tp = 10 ms, TC = 25 °C 1012 tp = 10 ms, TC = 150 °C 666 Maximum junction temperature 175 °C -40 to 150 °C Repetitive peak reverse voltage Operative temperature range under switching conditions A A2s Table 11: Electrical characteristics of the bridge rectifiers Symbol 1.4 Parameter Test conditions Min. Typ. Max. IF = 25 A - 1.0 1.4 IF = 25 A, TJ = 150 ˚C - 0.9 VF Forward voltage IR Reverse current TJ = 150 ˚C, VR = 1600 V - 1 RTHj-c Thermal resistance junction to case Each diode - 1.00 RTHc-h Thermal resistance case to heatsink Each diode, λgrease = 1 W/(m·°C) - 0.95 Unit V mA 1.10 °C/W °C/W NTC Table 12: NTC temperature sensor, considered as stand-alone Symbol Parameter Test condition Min. Typ. Max. Unit R25 Resistance T = 25 °C 5 kΩ R100 Resistance T = 100 °C 493 Ω ΔR/R Deviation of R100 B25/50 B-constant 3375 K B25/80 B-constant 3411 K T -5 Operating temperature range DocID031094 Rev 1 -40 +5 150 % °C 9/20 Electrical ratings A2C25S12M3-F Figure 2: NTC resistance vs. temperature 1.5 Figure 3: NTC resistance vs. temperature, zoom Package Table 13: ACEPACK™ 2 package Symbol 10/20 Parameter Min. Typ. Max. Unit 2500 V Visol Isolation voltage (AC voltage, t = 60 s) Md Screw mounting torque 40 80 Nm Tstg Storage temperature -40 125 °C CTI Comparative tracking index 200 Ls Stray inductance module P1 - EW loop 33.5 nH Rs Module lead resistance, terminal to chip 3.6 mΩ DocID031094 Rev 1 A2C25S12M3-F 2 Electrical characteristics curves Electrical characteristics curves Figure 4: IGBT output characteristics (VGE = 15 V) Figure 5: IGBT output characteristics (TJ = 150 °C) Figure 6: IGBT output characteristics (VCE = 15 V) Figure 7: Switching energy vs gate resistance Figure 8: Switching energy vs collector current Figure 9: IGBT reverse biased safe operating area (RBSOA) DocID031094 Rev 1 11/20 Electrical characteristics curves A2C25S12M3-F Figure 10: Diode forward characteristics Figure 11: Diode reverse recovery energy vs diode current slope Figure 12: Diode reverse recovery energy vs forward current Figure 13: Diode reverse recovery energy vs gate resistance Figure 14: Converter diode forward characteristics Figure 15: IGBT thermal impedance 12/20 DocID031094 Rev 1 A2C25S12M3-F Electrical characteristics curves Figure 16: Inverter diode thermal impedance DocID031094 Rev 1 13/20 Test circuits 3 A2C25S12M3-F Test circuits Figure 17: Test circuit for inductive load switching C A Figure 18: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG 1000 µF VCC D.U.T E - AM01504v 1 Figure 19: Switching waveform 14/20 Figure 20: Diode reverse recovery waveform DocID031094 Rev 1 A2C25S12M3-F 4 Topology and pin description Topology and pin description Figure 21: Electrical topology and pin description P P1 G5 G3 G1 B T1 U L1 L2 V W GB L3 G6 G4 G2 T2 EU NB N EV EW Figure 22: Package top view with CIB pinout W W G3 V V G1 U U L3 L3 G5 L2 P1 P1 L2 T2 L1 T1 B EW EW G6 EV EV G4 EU EU G2 NB GB L1 P P N N GADG041020170942S A DocID031094 Rev 1 15/20 Package information 5 A2C25S12M3-F Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 16/20 DocID031094 Rev 1 A2C25S12M3-F ACEPACK™ 2 CIB press fit pins package information Figure 23: ACEPACK™ 2 CIB press fit pins package outline (dimensions are in mm) 32.00 28.80 25.60 W 22.40 W G3 V V G1 U P1 P1 L3 U L3 G5 19.20 T2 16.00 T1 L2 L2 L1 EW 12.80 L1 B EW G6 EV EV G4 EU EU G2 NB GB P P N N 9.60 48.00 44.80 41.60 38.40 35.20 32.00 28.80 25.60 22.40 19.20 16.00 12.80 6.40 9.60 3.20 0.00 0.00 16.4±0.5 12±0.35 3.2 BSC Detail A A A 3.5 REF x45° 56.7±0.3 51±0.15 22.7±0.3 1.3±0.2 16.4±0.2 2.5±0.2 3.2 BSC 53±0.1 42.5±0.2 37 REF 48±0.3 2.3 REF 8.5 62.8±0.5 5.1 Package information 4.5±0.1 52.7 REF    The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. DocID031094 Rev 1 17/20 Package information A2C25S12M3-F Figure 24: ACEPACK™ 2 CIB press fit pins recommended PCB holes layout R4.50 W G3 V V G1 U U L3 L3 G5 3.20 L2 L2 P1 P1 T2 L1 L1 B T1 0.00 1.60 1.60 20.80 17.60 14.40 11.20 8.00 4.80 25.50 24.00 P N N 0 EW EW G6 EV EV G4 EU EU G2 NB GB 18/20 P DocID031094 Rev 1 4.80 8.00 11.20 14.40 17.60 20.80 R1. 4 0.00 3.20 6.40 16.00 21.25 26.50 24.00 25.50 W 26.50 21.25 16.00 12.80 9.60 6.40 A2C25S12M3-F 6 Revision history Revision history Table 14: Document revision history Date Revision 02-Oct-2017 1 DocID031094 Rev 1 Changes Initial release. 19/20 A2C25S12M3-F IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 20/20 DocID031094 Rev 1