A2C25S12M3

A2C25S12M3 Datasheet ACEPACK 2 converter inverter brake, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC Features ACEPACK 2 • ACEPACK 2 power module – DBC Cu Al2O3 Cu • • • • Converter inverter brake topology – 1600 V, very low drop rectifiers for converter – 1200 V, 25 A IGBTs and diodes – Soft and fast recovery diode Integrated NTC UL recognition: UL 1557, file E81734 Isolation rating of 2500 Vrms/min • RoHS compliant Applications • • Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A2C25S12M3 Product summary Order code A2C25S12M3 Marking A2C25S12M3 Package ACEPACK 2 Leads type Solder contact pins DS12320 - Rev 4 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com A2C25S12M3 Electrical ratings 1 Electrical ratings 1.1 Inverter stage Limiting values at TJ = 25 °C, unless otherwise specified. 1.1.1 IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Value Unit 1200 V Continuous collector current (TC = 100 °C) 25 A ICP Pulsed collector current (tp = 1 ms) 50 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 197 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C VCES IC (1) TJop Description Collector-emitter voltage (VGE = 0 V) Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol V(BR)CES Collector-emitter breakdown voltage VCE(sat) (terminal) Collector-emitter saturation voltage Test conditions IC = 1 mA, VGE = 0 V Collector cut-off current IGES Gate-emitter leakage current Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance tr (1) Eon V V V VGE = 0 V, VCE = 1200 V 100 μA VCE = 0 V, VGE = ±20 V ±500 nA VCC = 960 V, IC = 25 A, VGE = ±15 V 6 2.45 7 VCE = 25 V, f = 1 MHz, VGE = 0 V 5 Unit V 2.3 ICES Max. 1200 VGE = 15 V, IC = 25 A, TJ = 150 ˚C VCE = VGE, IC = 1 mA td(on) Typ. 1.95 Gate threshold voltage Total gate charge Min. VGE = 15 V, IC= 25 A VGE(th) Qg DS12320 - Rev 4 Parameter 1550 pF 130 pF 65 pF 80 nC Turn-on delay time VCC = 600 V, IC = 25 A, 109 ns Current rise time RG = 15 Ω, VGE = ±15 V, 15.3 ns Turn-on switching energy di/dt = 1290 A/µs 0.97 mJ page 2/18 A2C25S12M3 Inverter stage Symbol td(off) Parameter Test conditions Min. Typ. Max. Unit Turn-off delay time VCC = 600 V, IC = 25 A, 109 ns Current fall time RG = 15 Ω, VGE = ±15 V, 132 ns Eoff Turn-off switching energy dv/dt = 9600 V/µs 1.36 mJ td(on) Turn-on delay time VCC = 600 V, IC = 25 A, 109 ns Current rise time RG = 15 Ω, VGE = ±15 V, 16.2 ns Eon Turn-on switching energy di/dt = 1274 A/µs, TJ = 150 °C 1.49 mJ td(off) Turn-off delay time VCC = 600 V, IC = 25 A, 122 ns Current fall time RG = 15 Ω, VGE = ±15 V, 216 ns Turn-off switching energy dv/dt = 8200 V/µs, TJ = 150 °C 1.85 mJ tf (2) tr (1) tf (2) Eoff tSC VCC ≤ 600 V, VGE ≤ 15 V, Short-circuit withstand time TJstart ≤ 150 °C 10 µs RTHj-c Thermal resistance junction-tocase Each IGBT 0.69 RTHc-h Thermal resistance case-toheatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 0.76 °C/W °C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. 1.1.2 Diode Limiting values at TJ = 25 °C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode, inverter stage Symbol Value Unit 1200 V Continuous forward current (TC = 100 °C) 25 A IFP Pulsed forward current (tp = 1 ms) 50 A TJMAX Maximum junction temperature 175 °C -40 to 150 °C VRRM IF (1) TJop Parameter Repetitive peak reverse voltage Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 4. Electrical characteristics of the diode, inverter stage Symbol VF (terminal) DS12320 - Rev 4 Parameter Forward voltage Test conditions Min. Typ. Max. Unit IF = 25 A - 2.95 4.1 IF = 25 A, TJ = 150 ˚C - 2.3 - 190 ns V trr Reverse recovery time Qrr Reverse recovery charge IF = 25 A, VR = 600 V, - 1.53 µC Irrm Reverse recovery current VGE = ±15 V, diF/dt = 1290 A/μs - 29 A Erec Reverse recovery energy - 0.74 mJ page 3/18 A2C25S12M3 Brake stage Symbol trr Qrr 1.2 Parameter Test conditions Reverse recovery time IF = 25 A, VR = 600 V, Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy VGE = ±15 V, diF/dt = 1274 A/μs, TJ = 150 °C Min. Typ. - 378 ns - 4.43 µC - 41 A - 2.33 mJ RTHj-c Thermal resistance junction-tocase Each diode - 1.05 RTHc-h Thermal resistance case-toheatsink Each diode, λgrease = 1 W/(m·°C) - 0.85 Max. 1.16 Unit °C/W °C/W Brake stage Limiting values at TJ = 25 °C, unless otherwise specified. 1.2.1 IGBT Table 5. Absolute maximum ratings of the IGBT, brake stage Symbol Value Unit 1200 V Continuous collector current (TC = 100 °C) 25 A ICP(1) Pulsed collector current (tp = 1 ms) 50 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 197 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C VCES IC TJop Parameter Collector-emitter voltage (VGE = 0 V) Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 6. Electrical characteristics of the IGBT, brake stage Symbol V(BR)CES Collector-emitter breakdown voltage VCE(sat) (terminal) Collector-emitter saturation voltage Test conditions IC = 1 mA, VGE = 0 V Typ. 2.3 ICES Collector cut-off current IGES Gate-emitter leakage current Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance V VGE = 0 V, VCE = 1200 V 100 µA VCE = 0 V, VGE = ±20 V ± 500 nA VCC = 960 V, IC = 25 A, VGE = ±15 V 6 V 7 VCE = 25 V, f = 1 MHz, VGE = 0 V 5 Unit V VGE = 15 V, IC = 25 A, TJ = 150 ˚C VCE = VGE, IC = 1mA Max. 1200 1.95 Gate threshold voltage Total gate charge Min. VGE = 15 V, IC = 25 A VGE(th) Qg DS12320 - Rev 4 Parameter 1550 pF 130 pF 65 pF 80 nC page 4/18 A2C25S12M3 Brake stage Symbol td(on) Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VCC = 600 V, IC = 25 A, 109 ns Current rise time RG = 15 Ω, VGE = ±15 V, 15.3 ns Eon Turn-on switching energy di/dt = 1290 A/µs 0.97 mJ td(off) Turn-off delay time VCC = 600 V, IC = 25 A, 109 ns Current fall time RG = 15 Ω, VGE = ±15 V, 132 ns Turn-off switching energy dv/dt = 9600 V/µs 1.36 mJ Turn-on delay time VCC = 600 V, IC = 25 A, 109 ns Current rise time RG = 15 Ω, VGE = ±15 V, 16.2 ns Eon Turn-on switching energy di/dt = 1274 A/µs, TJ = 150 °C 1.49 mJ td(off) Turn-off delay time VCC = 600 V, IC = 25 A, 122 ns Current fall time RG = 15 Ω, VGE = ±15 V, 216 ns Turn-off switching energy dv/dt = 8200 V/µs, TJ = 150 °C 1.85 mJ tr (1) tf (2) Eoff td(on) tr (1) tf (2) Eoff tSC VCC ≤ 600 V, VGE≤ 15 V, Short-circuit withstand time TJstart ≤ 150 °C 10 µs RTHj-c Thermal resistance junction-tocase Each IGBT 0.69 RTHc-h Thermal resistance case-toheatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 0.76 °C/W °C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. 1.2.2 Diode Table 7. Absolute maximum ratings of the diode, brake stage Symbol Value Unit 1200 V Continuous forward current (TC = 100 °C) 25 A IFP(1) Pulsed forward current (tp = 1 ms) 50 A TJMAX Maximum junction temperature 175 °C -40 to 150 °C VRRM IF TJop Parameter Repetitive peak reverse voltage Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 8. Electrical characteristics of the diode, brake stage Symbol VF (terminal) DS12320 - Rev 4 Parameter Forward voltage Test conditions Min. Typ. IF = 25 A - 2.95 IF = 25 A, TJ = 150 ˚C - 2.3 Max. Unit V page 5/18 A2C25S12M3 Converter stage Symbol 1.3 Parameter Test conditions Min. Typ. Max. Unit - 190 ns trr Reverse recovery time Qrr Reverse recovery charge IF = 25 A, VR = 600 V, - 1.53 µC Irrm Reverse recovery current VGE = ±15 V, di/dt = 1290 A/μs - 29 A Erec Reverse recovery energy - 0.74 mJ - 378 ns - 4.43 µC - 41 A - 2.33 mJ trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy IF = 25 A, VR = 600 V, VGE = ±15 V, di/dt = 1274 A/μs, TJ = 150 °C RTHj-c Thermal resistance junction-tocase Each diode - 1.05 RTHc-h Thermal resistance case-toheatsink Each diode, λgrease = 1 W/(m·°C) - 0.85 1.16 °C/W °C/W Converter stage Limiting values at TJ = 25 °C, unless otherwise specified. Table 9. Absolute maximum ratings of the bridge rectifiers Symbol VRRM IF IFSM I²t TJMAX TJop Description Value Unit 1600 V RMS forward current 50 A Forward surge current tp = 10 ms, TC = 25 °C 450 Forward surge current tp = 10 ms, TC = 150 °C 365 tp = 10 ms, TC = 25 °C 1012 tp = 10 ms, TC = 150 °C 666 Maximum junction temperature 175 °C -40 to 150 °C Repetitive peak reverse voltage Operating junction temperature range under switching conditions A A²s Table 10. Electrical characteristics of the bridge rectifiers Symbol Min. Typ. Max. IF = 25 A - 1.05 1.4 IF = 25 A, TJ = 150 ˚C - 0.92 Reverse current TJ = 150 ˚C, VR = 1600 V - 1 RTHj-c Thermal resistance junction-tocase Each diode - 1.00 RTHc-h Thermal resistance case-toheatsink Each diode, λgrease = 1 W/(m·°C) - 0.95 VF (terminal) IR DS12320 - Rev 4 Parameter Forward voltage Test conditions Unit V mA 1.10 °C/W °C/W page 6/18 A2C25S12M3 NTC 1.4 NTC Table 11. NTC temperature sensor, considered as stand-alone Symbol Parameter Test condition Min. Typ. Max. Unit R25 Resistance T = 25 °C 5 kΩ R100 Resistance T = 100 °C 493 Ω ΔR/R Deviation of R100 B25/50 B-constant 3375 K B25/80 B-constant 3411 K T -5 Operating temperature range -40 Figure 1. NTC resistance vs temperature R (Ω) +5 GADG260720171142NTC % 150 °C Figure 2. NTC resistance vs temperature, zoom R (Ω) GADG260720171151NTCZ 800 max 10 4 700 600 10 3 min 500 typ 400 10 2 DS12320 - Rev 4 0 25 50 75 100 125 TC (°C) 300 85 90 95 100 105 110 TC (°C) page 7/18 A2C25S12M3 Package 1.5 Package Table 12. ACEPACK™ 2 package Symbol DS12320 - Rev 4 Parameter Min. Visol Isolation voltage (AC voltage, t = 60 s) Tstg Storage temperature -40 CTI Comparative tracking index 200 Typ. Max. Unit 2500 Vrms 125 °C Ls Stray inductance module P1 - EW loop 33.5 nH Rs Module single lead resistance, terminal to chip 3.6 mΩ page 8/18 A2C25S12M3 Electrical characteristics (curves) 2 Electrical characteristics (curves) Figure 3. IGBT output characteristics (VGE = 15 V, terminal) Ic (A) IGBT010920171111OC15 40 TJ = 25 °C Figure 4. IGBT output characteristics (TJ = 150 °C, terminal) IC (A) IGBT010920171114OC175 17 V 40 30 13 V 19 V 15 V 11 V 30 TJ = 150 °C 20 20 10 10 9V 0 0 1 2 3 4 5 VCE (V) Figure 5. IGBT transfer characteristics (VCE = 15 V, terminal) IC (A) IGBT010920171115TCH 0 0 1 2 3 4 5 VCE (V) Figure 6. IGBT collector current vs case temperature IC (A) IGBT301020181037CCT 50 40 40 30 30 20 20 TJ = 150 °C 10 0 5 DS12320 - Rev 4 10 TJ = 25 °C 6 7 8 9 10 11 VGE (V) 0 0 VCC = 15 V, TJ ≤ 175 °C 25 50 75 100 125 150 TC (°C) page 9/18 A2C25S12M3 Electrical characteristics (curves) Figure 7. Switching energy vs gate resistance IGBT031020170925SLG E (mJ) VCC = 600 V, IC = 25 A, VGE = ±15 V 4 Figure 8. Switching energy vs collector current IGBT031020170928SLC E (mJ) VCC = 600 V, VGE = ±15 V, RG = 15 Ω Eon (TJ = 150 °C) 3 Eon (TJ = 150 °C) Eoff (TJ = 25 °C) 3 Eoff (TJ = 150 °C) Eon (TJ = 25°C) 2 2 0 10 1 Eoff (TJ = 25 °C) 1 Eon (TJ = 25°C) Eoff (TJ = 150 °C) 30 50 70 90 RG (Ω) Figure 9. IGBT reverse biased safe operating area (RBSOA) IGBT031020170930FSOA IC (A) TJ = 125 °C, VGE = ±15 V, RG = 15 Ω 0 5 15 25 35 45 IC (A) Figure 10. Diode forward characteristics (terminal) IF (A) IGBT010920171142DVF 40 50 40 30 TJ = 150 °C 30 20 20 TJ = 25 °C 10 10 0 0 300 600 900 VCE (V) Figure 11. Diode reverse recovery energy vs diode current slope IGBT031020170932RRE Erec (mJ) VCE = 600 V, IF = 25 A, VGE = ±15 V 2.0 3 4 VF (V) Figure 12. Diode reverse recovery energy vs forward current Erec IGBT031020170935DVF (mJ) VCE = 600 V, RG = 15 Ω, 2.8 VGE = ±15 V Tj = 150 °C 1.6 1.2 0.8 Tj = 25 °C Tj = 25 °C 0.8 0.4 DS12320 - Rev 4 2 2.0 1.2 0.0 200 1 2.4 Tj = 150 °C 1.6 0 0 0.4 500 800 1100 di/dt (A/μs) 0 5 15 25 35 45 IF (A) page 10/18 A2C25S12M3 Electrical characteristics (curves) Figure 13. Diode reverse recovery energy vs gate resistance Erec (mJ) IGBT031020170938STR VCC = 600 V, IF = 25 A, VGE = ±15 V 2.0 Figure 14. Converter diode forward characteristics (terminal) IF (A) IGBT031020170941DVFC Tj = 150 °C 40 1.6 Tj =150 °C 30 1.2 20 0.8 Tj = 25 °C Tj = 25 °C 10 0.4 0.0 10 30 50 70 90 RG (Ω) Figure 15. IGBT thermal impedance Zth(°C/W) GIPG031020171028ZTH 0 0 0.35 0.70 1.05 VF (V) Figure 16. Inverter diode thermal impedance Zth(°C/W) IGBT031020171035ZTHD Zth(typ)JH 10 0 JC 1 ri (˚C/W) τi(s) JH i DS12320 - Rev 4 τi(s) 0.0865 0.0003 2 JC 0.3398 0.0068 3 0.2287 0.0371 4 1 0.0979 0.0004 10 -1 2 0.3583 0.0109 0.1025 0.2801 10 0 1 τi(s) JH 3 0.6587 0.0731 RC - Foster Thermal Network i ri (˚C/W) RC - Foster Thermal Network ri (˚C/W) 10 -2 Zth(max)JC RC - Foster Thermal Network i 10 -1 10 -3 10 0 Zth(max)JC Zth(typ)JH 4 0.3617 0.3327 t (s) i τi(s) 10 -2 2 0.4932 0.0052 3 0.3655 0.0263 4 0.1483 0.2160 RC - Foster Thermal Network 1 ri (˚C/W) 10 -1 10 -3 0.1488 0.0007 0.2136 0.0010 10 -1 2 0.5294 0.0096 3 0.7328 0.0612 10 0 4 0.4189 0.2839 t (s) page 11/18 A2C25S12M3 Test circuits 3 Test circuits Figure 17. Test circuit for inductive load switching C A Figure 18. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 20. Diode reverse recovery waveform Figure 19. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 25 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS12320 - Rev 4 page 12/18 A2C25S12M3 Topology and pin description 4 Topology and pin description Figure 21. Electrical topology and pin description P P1 B T1 L1 L2 G5 G3 G1 U V W GB L3 G6 G4 G2 T2 EU NB N EV EW Figure 22. Package top view with CIB pinout W W G3 V V G1 U U L3 L3 G5 L2 P1 P1 L2 T2 L1 T1 B EW EW G6 EV EV G4 EU EU G2 NB GB L1 P P N N GADG041020170942SA DS12320 - Rev 4 page 13/18 A2C25S12M3 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS12320 - Rev 4 page 14/18 A2C25S12M3 ACEPACK 2 CIB solder pins package information 5.1 ACEPACK 2 CIB solder pins package information Figure 23. ACEPACK 2 CIB solder pins package outline (dimensions are in mm) 32.00 28.80 25.60 W W G3 V V G1 U L3 U L3 G5 22.40 T2 19.20 T1 L2 P1 P1 L2 L1 16.00 L1 B EW EW G6 EV EV G4 EU EU G2 NB GB P P N N 12.80 9.60 15.5±0.5 48.00 38.40 44.80 □0.64±0.03 12±0.35 3.2 BSC 41.60 35.20 32.00 28.80 22.40 25.60 19.20 12.80 16.00 6.40 9.60 3.20 0.00 0.00 Detail A 3.5 REF x45° A A 56.7±0.3 51±0.15 22.7±0.3 1.3±0.2 16.4±0.2 2.3 REF 2.5±0.2 3.2 BSC 53±0.1 42.5±0.2 37 REF 48±0.3 62.8±0.5 8.5 4.5±0.1 52.7 REF 8569722_ACEPACK2_CIB_solderable_pins • • • DS12320 - Rev 4 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. page 15/18 A2C25S12M3 Revision history Table 13. Document revision history Date Revision 02-Oct-2017 1 Changes Initial release. Removed maturity status indication from cover page. The document status is production data. Modified features on cover page. 07-Mar-2018 2 Updated Figure 7. Switching energy vs collector current, Figure 14. IGBT thermal impedance and Figure 15. Inverter diode thermal impedance. Updated Figure 22. ACEPACK™ 2 CIB solder pins package outline (dimensions are in mm). Minor text changes. DS12320 - Rev 4 20-Nov-2018 3 12-Apr-2019 4 Added Figure 6. IGBT collector current vs case temperature. Minor text changes. Updated features in cover page page 16/18 A2C25S12M3 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1.1 1.2 Inverter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1.1 IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Brake stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.2.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.2.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.3 Converter stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.4 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 5.1 ACEPACK 2 CIB solder pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS12320 - Rev 4 page 17/18 A2C25S12M3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS12320 - Rev 4 page 18/18