A2F12M12W2-F1

A2F12M12W2-F1 Datasheet ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC Features • • ACEPACK 2 DC+ Fourpack topology ACEPACK 2 power module – 13 mΩ of typical RDS(on) each switch – – – Insulation voltage UL certified of 2.5 kVrms Integrated NTC temperature sensor DBC Cu-Al2O3-Cu based – Press fit contact pins DC+ G1 Applications G3 T1 S3 S1 AC1 AC2 G2 G4 S2 DC1- S4 • DC/DC converter T2 Description DC2- This ACEPACK 2 power module in fourpack topology integrates advanced silicon carbide Power MOSFET technology from STMicroelectronics. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermalperformance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature. An NTC sensor completes the design. Product status link A2F12M12W2-F1 Product summary Order code A2F12M12W2-F1 Marking A2F12M12W2-F1 Package ACEPACK 2 Leads type Press fit Packing Tray DS13840 - Rev 3 - February 2022 For further information contact your local STMicroelectronics sales office. www.st.com A2F12M12W2-F1 Electrical rating 1 Electrical rating TJ = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings Symbol VDS VGS ID IDM (1) TJ Parameter Value Unit Drain-source voltage 1200 V Gate-source voltage -10 to 22 Gate-source voltage, recommended operating values -5 to 18 V Drain current (continuous) at TH = 25 °C 75 A Repetitive peak drain current 150 A Maximum junction temperature 175 Operating junction temperature range under switching conditions -40 to 150 °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol RthJH DS13840 - Rev 3 Parameter Thermal resistance, junction-to-heat sink (TIM = 80 μm, λ = 3 W•m-1•°C-1) Value Unit 0.43 °C/W page 2/15 A2F12M12W2-F1 Electrical characteristics 2 Electrical characteristics Table 3. On/off-state Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V , ID = 1 mA RDS(on) Static drain-source on-resistance VGS(th) Gate threshold voltage ID = 10 mA, VDS = VGS IDSS Zero gate voltage drain current IGSS Gate-body leakage current Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Min. Typ. Max. 1200 V VGS = 18 V , ID = 75 A 13 VGS = 18 V , ID = 75 A,TJ = 150 °C 20 1.9 Unit mΩ 4.9 V VDS = 1200 V, VGS = 0 V 200 μA VDS = 0, VGS = -10 to 22 V ±1 μA f = 1 MHz, VDS = 800 V, VGS = 0 V f = 1 MHz, ID = 0 A VDD = 800 V, VGS = -5 to 18 V, ID = 100 A 3.0 17 7000 pF 440 pF 56 pF 1 Ω 294 nC 65 nC 109 nC Table 4. Switching energy Symbol Parameter Test conditions Min. Typ. Max. Eon Turn-on switching energy VDD = 800 V, ID = 75 A, - 1.48 - Eoff Turn-off switching energy VGS = -5 to 18 V, RG = 5.6 Ω - 0.35 - Eon Turn-on switching energy VDD = 800 V, ID = 75 A, - 1.51 - Eoff Turn-off switching energy - 0.32 - VGS = -5 to 18 V, RG = 5.6 Ω TJ = 150 °C Unit mJ mJ Table 5. Source-drain diode Symbol VSD DS13840 - Rev 3 Parameter Forward on voltage drop Test conditions VGS = 0 V, ISD = 75 A Min. Typ. Max. Unit - 2.9 - V - 42 - ns trr Reverse recovery time Qrr Reverse recovery charge ISD = 75 A, - 896 - nC IRRM Reverse recovery current VDD = 800 V, VGS = -5 V - 60 - A Err Reverse recovery energy - 336 - µJ page 3/15 A2F12M12W2-F1 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Typical output characteristics (TJ = -40°C) ID (A) GADG140120221459OCH VGS = 20 V 140 Figure 2. Typical output characteristics (TJ = 25°C) ID (A) VGS = 16 V 100 120 VGS = 16 V 100 VGS = 18 V 80 60 40 40 20 20 0.4 0.8 1.2 1.6 2 2.4 VDS (V) Figure 3. Typical output characteristics (TJ = 150 °C) ID (A) GADG140120221501OCH 20 V 140 0 0.0 120 60 60 40 40 20 20 2.4 3 3.6 VDS (V) Figure 5. Typical diode foward charcteristics (terminal) ID (A) 1.6 2 2.4 VDS (V) GADG140120221501TCH TJ = 150°C 100 80 1.8 1.2 ID (A) 80 1.2 0.8 Figure 4. Typical transfer characteristics 120 16 V 0.6 0.4 140 18 V 100 VGS = 18 V 80 60 0 0.0 VGS = 20 V 140 120 0 0.0 GADG190120220851OCH GADG140120221502OCH -20 0 0 TJ = 25°C TJ = -40°C 2 4 6 8 10 VGS (V) Figure 6. Typical gate charge characteristics VGS (V) 18 GADG140120221503QVG VDD = 800 V, ID = 100 A -40 12 -60 -80 VGS = 0 V 6 -100 0 -120 -6 -140 -160 -6 DS13840 - Rev 3 -5 -4 -3 -2 -1 VDS (V) -12 0 50 100 150 200 250 300 Qg (nC) page 4/15 A2F12M12W2-F1 Electrical characteristics (curves) Figure 7. Typical switching energy vs drain current (TJ = 25 °C) E (mJ) GADG140120221505RID Vbus=800V, RG=5.6Ω, VGS=-5/18 V, TJ=25°C Figure 8. Typical switching energy vs drain current (TJ = 150 °C) E (mJ) 2.0 2.0 1.6 1.6 Eon 1.2 0.8 Eoff 0.4 20 40 60 Eoff 0.4 80 100 120 140 ID (A) Figure 9. Typical switching energy vs gate resistance (TJ = 25 °C) E (mJ) Eon 1.2 0.8 0.0 0 GADG140120221504RID Vbus=800V, RG=5.6Ω, VGS=-5/18 V, TJ=150°C GADG140120221509ZTH Vbus=800V, ID=75A, VGS=-5/18V, TJ=25°C 0.0 0 20 40 60 80 100 120 140 ID (A) Figure 10. Typical switching energy vs gate resistance (TJ = 150 °C) E (mJ) 2.5 2.5 2.0 2.0 1.5 1.5 GADG190120221500EAS Vbus=800V, ID=75A, VGS=-5/18V, TJ=150°C Eon Eon 1.0 1.0 Eoff Eoff 0.5 0.5 0.0 0 2 4 RG(Ω) 6 Figure 11. Typical switching energy vs temperature E (mJ) GADG140120221511BDV Vbus=800V, IG=75A, RG=5.6Ω, VGS=-5/18V 6 RG(Ω) Figure 12. Typical switching energy vs VGS (TJ = 25 °C) E (mJ) GADG140120221514RCC175 Vbus=800V, RG=5.6Ω, TJ=25°C 1.0 0.5 DS13840 - Rev 3 4 1.5 1.0 0.0 0 2 Eon Eon 1.5 0.0 0 0.5 Eoff 25 50 75 100 125 150 TJ (°C) 0.0 -5 Eoff -4 -3 -2 -1 VGS(V) page 5/15 A2F12M12W2-F1 Electrical characteristics (curves) Figure 13. Typical switching energy vs VGS (TJ = 150 °C) E (mJ) GADG140120221515RCC175 Vbus= 800V, RG =5.6Ω , TJ=150°C Figure 14. Maximum transient thermal impedance ZthJC (°C/W) GADG140120221515ZTH Eon 1.5 10 -1 1.0 Eoff 0.5 0.0 -5 DS13840 - Rev 3 10 -2 -4 -3 -2 -1 VGS (V) Single pulse 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 tp (s) page 6/15 A2F12M12W2-F1 NTC 3 NTC Table 6. Absolute maximum ratings for NTC temperature sensor, considered as stand-alone Symbol Parameter R25 Resistance rating R100 Resistance rating ΔR100/R Test condition Min. T = 25 °C T = 100 °C Resistance tolerance B B value T Operating temperature range Typ. Unit 5 kΩ 493 Ω -5 5 T = 25 to 50 °C 3375 T = 25 to 85 °C 3411 -40 Max. % K 150 °C Figure 15. NTC typical resistance vs temperature R (Ω) GADG260720171142NTC 10 4 10 3 10 2 0 25 50 75 100 125 T (°C) Figure 16. NTC resistance vs temperature, zoom R (Ω) GADG260720171151NTCZ 800 max 700 600 min 500 typ 400 300 85 DS13840 - Rev 3 90 95 100 105 110 T (°C) page 7/15 A2F12M12W2-F1 Package 4 Package Table 7. ACEPACK 2 package Symbol Parameter Min. VISO Isolation withstand voltage applied between each pin and heat sink plate (AC voltage, t = 60 s) 2.5 Md Mounting torque (M4 screw) 2.0 CTI Comparative tracking index 200 Ls Tstg DS13840 - Rev 3 Stray inductance module loop Storage temperature range Typ. Max. kVrms 2.3 12 -40 Unit N•m nH 125 °C page 8/15 A2F12M12W2-F1 Electrical topology and pin description 5 Electrical topology and pin description Figure 17. Electrical topology and pin description DC+ DC+ G1 G3 S1 S3 AC1 T1 AC2 G2 G4 S2 DC1- S4 T2 DC2Figure 18. Package top view with pinout GADG051020211046SA DS13840 - Rev 3 page 9/15 A2F12M12W2-F1 Package information 6 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 6.1 ACEPACK 2 fourpack press fit package information Figure 19. ACEPACK 2 fourpack press fit package outline (dimensions are in mm) 8569722_12_fourpack_press_fit DS13840 - Rev 3 page 10/15 A2F12M12W2-F1 ACEPACK 2 fourpack press fit package information Table 8. ACEPACK 2 fourpack press fit mechanical data Dim. mm Min. Typ. Max. A 47.70 48.00 48.30 A1 42.30 42.50 42.70 A2 37.00 REF B 56.40 56.70 57.00 B1 50.85 51.00 51.15 B2 22.40 22.70 23.00 B3 52.70 REF C 62.30 62.80 63.30 C1 52.90 53.00 53.10 C2 16.20 16.40 16.60 C3 4.40 4.50 4.60 D 11.65 12.00 12.35 D1 15.90 16.40 16.90 D2 1.10 1.30 1.50 D3 2.30 2.50 2.70 D4 DS13840 - Rev 3 8.50 t 0.30 0.40 0.50 θ 52° 60° 68° θ1 45° e 3.20 BSC d1 2.30 REF ch 3.50 REF page 11/15 A2F12M12W2-F1 ACEPACK 2 fourpack press fit package information Figure 20. ACEPACK 2 fourpack press fit recommended PCB holes layout (dimensions are in mm) 8569722_12_fourpack_press_fit_holes_layout DS13840 - Rev 3 page 12/15 A2F12M12W2-F1 Revision history Table 9. Document revision history Date Revision 18-Oct-2021 1 Changes First release. Updated the description in cover page, Table 2. Thermal data, Table 3. Electrical characteristics and Table 5. Source drain diode. 01-Feb-2022 2 Updated Table 7. ACEPACK 2 package. Added Section 4 Electrical characteristics (curves). Minor text changes. Updated title, features and description in cover page. 11-Feb-2022 3 Updated Section 1 Electrical rating, Section 3 NTC, Section 4 Package and Section 5 Electrical topology and pin description. Added Section 2 Electrical characteristics. Minor text changes. DS13840 - Rev 3 page 13/15 A2F12M12W2-F1 Contents Contents 1 Electrical rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 NTC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 5 Electrical topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 6.1 ACEPACK 2 fourpack press fit package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS13840 - Rev 3 page 14/15 A2F12M12W2-F1 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS13840 - Rev 3 page 15/15