A2U12M12W2-F2

A2U12M12W2-F2 Datasheet ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC Features • • ACEPACK 2 3-level topology ACEPACK 2 power module – 13 mΩ of typical RDS(on) each switch – – – Insulation voltage UL certified of 2.5 kVrms Integrated NTC temperature sensor DBC Cu-Al2O3-Cu based – Press fit contact pins DC+ T2 S3 G3 D T1 G1 S1 AC N G4 G2 Applications • DC/DC converter Description S2 S4 DCGADG240720201013GT This ACEPACK 2 power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology from STMicroelectronics. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature. An NTC sensor completes the design. Product status link A2U12M12W2-F2 Product summary Order code A2U12M12W2-F2 Marking A2U12M12W2-F2 Package ACEPACK 2 Packing Tray Leads type Press fit DS13418 - Rev 2 - February 2022 For further information contact your local STMicroelectronics sales office. www.st.com A2U12M12W2-F2 Electrical rating 1 Electrical rating TJ = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings Symbol VDS VGS ID IDM TJ Parameter Value Unit Drain-source voltage 1200 V Gate-source voltage -10 to 22 Gate-source voltage, recommended operating values -5 to 18 V Drain current (continuous) at TH = 25 °C 75 A Repetitive peak drain current 150 A Maximum junction temperature 175 Operating junction temperature range under switching conditions -40 to 150 °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol RthJH DS13418 - Rev 2 Parameter Thermal resistance, junction-to-heat sink (TIM = 80 μm, λ = 3 W•m-1•°C-1) Value Unit 0.46 °C/W page 2/15 A2U12M12W2-F2 Electrical characteristics 2 Electrical characteristics Table 3. On/off-state Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V , ID = 1 mA RDS(on) Static drain-source on-resistance VGS(th) Gate threshold voltage ID = 10 mA, VDS = VGS IDSS Zero gate voltage drain current IGSS Gate-body leakage current Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Min. Typ. Max. 1200 V VGS = 18 V , ID = 75 A 13 VGS = 18 V , ID = 75 A, TJ = 150 °C 20 1.9 Unit mΩ 4.9 V VDS = 1200 V, VGS = 0 V 200 μA VDS = 0, VGS = -10 to 22 V ±1 μA f = 1 MHz, VDS = 800 V, VGS = 0 V f = 1 MHz, ID = 0 A VDS = 450 V, VGS = -5 to 18 V, ID = 100 A 3.0 17 7000 pF 440 pF 56 pF 1 Ω 298 nC 96 nC 108 nC Table 4. Switching energy Symbol Parameter Eon Turn-on switching energy Eoff Turn-off switching energy Eon Turn-on switching energy Test conditions VDS = 450 V, ID = 75 A, RG(on) = 5.6 Ω, RG(off) = 1 Ω, VGS = -5 to 18 V VDS = 450 V, ID = 75 A, Min. Typ. Max. - 0.52 - - 0.32 - - 0.46 - - 0.33 - RG(on) = 5.6 Ω, RG(off) = 1 Ω, Eoff Turn-off switching energy VGS = -5 to 18 V Unit mJ mJ TJ = 150 °C Table 5. Source-drain diode Symbol DS13418 - Rev 2 Parameter Test conditions VGS = 0 V, ISD = 75 A Min. Typ. Max. Unit - 2.9 - V - 182 - μJ VSD Forward on voltage drop Err Reverse recovery energy trr Reverse recovery time VDD = 450 V, ISD = 75 A, - 20 - ns Qrr Reverse recovery charge VGS = -5 V - 546 - nC IRRM Reverse recovery current - 46 - A page 3/15 A2U12M12W2-F2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Typical output characteristics (TJ = -40 °C) ID (A) GADG200120221602OCH Figure 2. Typical output characteristics (TJ = 25 °C) ID (A) 140 140 120 120 VGS = 20 V VGS = 16 V 100 80 60 40 40 20 20 0.8 1.2 1.6 2 2.4 VDS (V) Figure 3. Typical output characteristics (TJ = 150 °C) ID (A) GADG200120221603OCH VGS = 18 V 0 0.0 0.4 0.8 1.2 1.6 2 2.4 VDS (V) Figure 4. Typical transfer characteristics ID (A) GADG200120221604OCH 140 140 VGS = 20 V 120 120 VGS = 16 V TJ = 150 °C 100 100 VGS = 18 V 80 80 60 60 40 40 20 20 0 0.0 VGS = 16 V 80 VGS = 18 V 0.4 VGS = 20 V 100 60 0 0.0 GADG200120221601OCH 0.6 1.2 1.8 2.4 3 3.6 VDS (V) Figure 5. Typical diode foward charcteristics (terminal) ID (A) GADG200120221605OCH -20 0 0 TJ = -40 °C 2 4 6 8 10 VGS (V) Figure 6. Typical gate charge characteristics VGS (V) 18 -40 GADG200120221606QVG VDD = 450 V, ID = 100 A 12 VGS = 0 V -60 TJ = 25 °C -80 6 -100 0 -120 -6 -140 -160 -6 DS13418 - Rev 2 -5 -4 -3 -2 -1 0 VDS (V) -12 0 50 100 150 200 250 300 Qg (nC) page 4/15 A2U12M12W2-F2 Electrical characteristics (curves) Figure 7. Typical switching energy vs drain current (TJ = 25 °C) E (mJ) GADG200120221607EOS VDS=450V, RGon=5.6 Ω, RGoff=1Ω, VGS=-5 to 18V Figure 8. Typical switching energy vs drain current (TJ = 150 °C) E (mJ) 1.0 1.0 0.8 0.8 Eon 0.6 0.6 0.4 Eoff 20 40 60 Eoff 0.2 80 100 120 140 ID(A) Figure 9. Typical switching energy vs gate resistance (TJ = 25 °C) E (mJ) Eon 0.4 0.2 0.0 0 GADG200120221608RID VDS=450V, RGon=5.6Ω, RGoff=1Ω, VGS=-5 to 18V, TJ=150°C GADG200120221609EOS VDS=450V, ID=75A, VGS=-5 to 18V 1.5 0.0 0 20 40 60 80 100 120 140 ID (A) Figure 10. Typical switching energy vs gate resistance (TJ = 150 °C) E (mJ) GADG200120221610EOS VDS=450V, ID=75A, VGS=-5 to 18V, TJ=150°C 1.5 1.0 1.0 Eoff Eon Eoff 0.5 0.5 Eon 0.0 4 5 6 7 RG(Ω) Figure 11. Typical switching energy vs temperature E (mJ) GADG200120221611BDV VDS=450V,RGon=5.6Ω,RGoff=1Ω,VGS=-5 to 18V 0.0 4 5 6 7 RG(Ω) Figure 12. Typical switching energy vs VGS (TJ = 25 °C) E (mJ) 0.9 GADG200120221612EAS VDS=450V, RGon=5.6Ω, RGoff=1Ω 0.8 0.7 0.6 Eon 1 0.5 Eon 0.4 Eoff 0.3 Eoff 0.2 0.1 0 0 DS13418 - Rev 2 25 50 75 100 125 150 TJ (˚C) 0.0 -5 -4 -3 -2 -1 VGS(V) page 5/15 A2U12M12W2-F2 Electrical characteristics (curves) Figure 13. Typical switching energy vs VGS (TJ = 150 °C) E (mJ) 0.9 GADG200120221613EOS VDS=450V,RGon=5.6Ω,RGoff=1Ω,TJ=150°C Figure 14. Maximum transient thermal impedance ZthJC (°C/W) GADG140120221515ZTH 0.8 0.7 10 -1 0.6 0.5 Eon 0.4 10 -2 Eoff 0.3 Single pulse 0.2 0.1 0.0 -5 DS13418 - Rev 2 -4 -3 -2 -1 VGS(V) 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 tp (s) page 6/15 A2U12M12W2-F2 NTC 3 NTC Table 6. Absolute maximum ratings for NTC temperature sensor, considered as stand-alone Symbol Parameter R25 Resistance rating R100 Resistance rating ΔR100/R Test condition Min. T = 25 °C T = 100 °C Resistance tolerance B B value T Operating temperature range Typ. Unit 5 kΩ 493 Ω -5 5 T = 25 to 50 °C 3375 T = 25 to 85 °C 3411 -40 Max. % K 150 °C Figure 15. NTC typical resistance vs temperature R (Ω) GADG260720171142NTC 10 4 10 3 10 2 0 25 50 75 100 125 T (°C) Figure 16. NTC resistance vs temperature, zoom R (Ω) GADG260720171151NTCZ 800 max 700 600 min 500 typ 400 300 85 DS13418 - Rev 2 90 95 100 105 110 T (°C) page 7/15 A2U12M12W2-F2 Package 4 Package Table 7. ACEPACK 2 package Symbol VISO Isolation withstand voltage applied between each pin and heat sink plate (AC voltage, t = 60 s) Min. Mounting torque (M4 screw) 2.0 CTI Comparative tracking index 200 Tstg Stray inductance module loop Storage temperature range Typ. Max. 2.5 Md Ls DS13418 - Rev 2 Parameter kVrms 2.3 10 -40 Unit N•m nH 125 °C page 8/15 A2U12M12W2-F2 Electrical topology and pin description 5 Electrical topology and pin description Figure 17. Electrical topology and pin description DC+ T2 S3 G3 D T1 G1 S1 AC N G4 G2 S2 S4 DCGADG240720201013GT Figure 18. Package top view with pinout DS13418 - Rev 2 page 9/15 A2U12M12W2-F2 Package information 6 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 6.1 ACEPACK 2 3-level T-type press fit package information Figure 19. ACEPACK 2 3-level T-type press fit package outline (dimensions are in mm) 8569722_12_3L_T-type DS13418 - Rev 2 page 10/15 A2U12M12W2-F2 ACEPACK 2 3-level T-type press fit package information Table 8. ACEPACK 2 3-level T-type press fit mechanical data Dim. mm Min. Typ. Max. A 47.70 48.00 48.30 A1 42.30 42.50 42.70 A2 37.00 REF B 56.40 56.70 57.00 B1 50.85 51.00 51.15 B2 22.40 22.70 23.00 B3 52.70 REF C 62.30 62.80 63.30 C1 52.90 53.00 53.10 C2 16.20 16.40 16.60 C3 4.40 4.50 4.60 D 11.65 12.00 12.35 D1 15.90 16.40 16.90 D2 1.10 1.30 1.50 D3 2.30 2.50 2.70 D4 DS13418 - Rev 2 8.50 t 0.30 0.40 0.50 θ 52° 60° 68° θ1 45° e 3.20 BSC d1 2.30 REF ch 3.50 REF page 11/15 A2U12M12W2-F2 ACEPACK 2 3-level T-type press fit package information Figure 20. ACEPACK 2 3-level T-type press fit recommended PCB holes layout (dimensions are in mm) 8569722_12_3L_T-type_recomm_PCB_hol_lay DS13418 - Rev 2 page 12/15 A2U12M12W2-F2 Revision history Table 9. Document revision history Date Revision 14-Sep-2021 1 Changes First release. Updated title, features and description in cover page. Updated Table 2. Thermal data, Table 3. On/off-state, and Table 5. Source-drain diode. 11-Feb-2022 2 Updated Table 7. ACEPACK 2 package. Updated Section 2.1 Electrical characteristics (curves). Minor text changes. DS13418 - Rev 2 page 13/15 A2U12M12W2-F2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 NTC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 5 Electrical topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 6.1 ACEPACK 2 3-level T-type press fit package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS13418 - Rev 2 page 14/15 A2U12M12W2-F2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS13418 - Rev 2 page 15/15