A5975AD
Up to 2.5 A step-down switching regulator
for automotive applications
Features
■
Qualified following the AEC-Q100
requirements (see PPAP for more details)
■
2.5 A DC output current
■
Operating input voltage from 4 V to 36 V
■
3.3 V / (±2%) reference voltage
■
Output voltage adjustable from 1.235 V to 35 V
■
Low dropout operation: 100% duty cycle
■
500 kHz internally fixed frequency
■
Voltage feed-forward
■
Zero load current operation
■
Internal current limiting
■
Inhibit for zero current consumption
■
Synchronization
■
Protection against feedback disconnection
■
Thermal shutdown
HSOP8 - exposed pad
Description
The A5975AD is a step-down monolithic power
switching regulator with a minimum switch current
limit of 3.1 A, it is therefore able to deliver up to
2.5 A DC current to the load depending on the
application conditions. The output voltage can be
set from 1.235 V to 35 V. The high current level is
also achieved thanks to a HSOP8 package with
exposed frame, that allows to reduce the RTHJ-A
down to approximately 40 °C/W. The device uses
an internal P-channel DMOS transistor (with a
typical RDS(on) of 250 mΩ) as switching element
to minimize the size of the external components.
An internal oscillator fixes the switching frequency
at 500 kHz. Having a minimum input voltage of
only 4 V, it fits automotive applications requiring
device operation even in cold crank conditions.
Pulse-by-pulse current limit with the internal
frequency modulation offers an effective constant
current short-circuit protection.
Application
■
Dedicated to automotive applications
Figure 1.
Application schematic
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POWERPLANE
April 2011
40
Doc ID 018761 Rev 1
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1/50
www.st.com
50
Contents
A5975AD
Contents
1
2
Pin settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.1
Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Datasheet parameters over the temperature range . . . . . . . . . . . . . . . 10
5
Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
7
8
2/50
5.1
Power supply and voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.2
Voltage monitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3
Oscillator and synchronization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4
Current protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.5
Error amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.6
PWM comparator and power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.7
Inhibit function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.8
Thermal shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Additional features and protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.1
Feedback disconnection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.2
Output overvoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3
Zero load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Closing the loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7.1
Error amplifier and compensation network . . . . . . . . . . . . . . . . . . . . . . . . 20
7.2
LC filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
7.3
PWM comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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A5975AD
Contents
8.1
Component selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8.2
Layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.3
Thermal considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
8.3.1
Thermal resistance RTHJ-A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
8.3.2
Thermal impedance ZthJ-A(t) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8.4
RMS current of the embedded power MOSFET . . . . . . . . . . . . . . . . . . . 32
8.5
Short-circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
8.6
Application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8.7
Positive buck-boost regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
8.8
Negative buck-boost regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
8.9
Floating boost current generator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
8.10
Synchronization example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
8.11
Compensation network with MLCC at the output . . . . . . . . . . . . . . . . . . . 41
8.12
External soft-start network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
9
Typical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
11
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
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List of tables
A5975AD
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
4/50
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Uncompensated error amplifier characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
List of ceramic capacitors for the A5975AD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Output capacitor selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Inductor selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Component list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
HSOP8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Doc ID 018761 Rev 1
A5975AD
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pin connection (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Internal circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Oscillator circuit block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Synchronization example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Current limitation circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Driving circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Block diagram of the loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Error amplifier equivalent circuit and compensation network . . . . . . . . . . . . . . . . . . . . . . . 20
Module plot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Phase plot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Layout example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Switching losses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Power losses estimation (VIN = 5 V, fSW = 500 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Power losses estimation (VIN = 12 V, fSW = 500 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Measurement of the thermal impedance of the demonstration board . . . . . . . . . . . . . . . . 31
Maximum continuous output current vs. duty cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Short-circuit current VIN = 12 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Short-circuit current VIN = 24 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Short-circuit current VIN = 36 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Demonstration board application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
PCB layout (component side) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
PCB layout (bottom side) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
PCB layout (front side) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Positive buck-boost regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Negative buck-boost regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Floating boost topology. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
350 mA LED boost current source . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Synchronization example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
MLCC compensation network circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Soft-start network example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Line regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Shutdown current vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Output voltage vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Junction temperature vs. output current (VIN = 5 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Junction temperature vs. output current (VIN = 12 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Efficiency vs. output current (VIN = 12 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Efficiency vs. output current (VIN = 5 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Package dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
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Pin settings
A5975AD
1
Pin settings
1.1
Pin connection
Figure 2.
Pin connection (top view)
!-V
1.2
Pin description
Table 1.
6/50
Pin description
N
Pin
Description
1
OUT
2
SYNCH
3
INH
4
COMP
5
FB
6
VREF
3.3 V VREF. No cap is requested for stability
7
GND
Ground
8
VCC
Unregulated DC input voltage
Regulator output
Master/slave synchronization
A logical signal (active high) disables the device. If INH is not used the
pin must be grounded. When it is open, an internal pull-up disables the
device
E/A output for frequency compensation
Feedback input. Connecting directly to this pin results in an output
voltage of 1.23 V. An external resistive divider is required for higher
output voltages
Doc ID 018761 Rev 1
A5975AD
Electrical data
2
Electrical data
2.1
Maximum ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
40
V
V
V
V8
Input voltage
V1
OUT pin DC voltage
OUT pin peak voltage at Δt = 0.1 µs
-1 to 40
-5 to 40
I1
Maximum output current
int. limit.
V4, V5
Analog pins
4
V
-0.3 to VCC
V
-0.3 to 4
V
2.25
W
Operating junction temperature range
-40 to 150
°C
Storage temperature range
-55 to 150
°C
Value
Unit
40 (1)
°C/W
V3
INH
V2
SYNCH
PTOT
TJ
TSTG
2.2
Parameter
Power dissipation at TA ≤ 60 °C
Thermal data
Table 3.
Symbol
RTHJ-A
Thermal data
Parameter
Maximum thermal resistance junction-ambient
1. Package mounted on demonstration board.
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Electrical characteristics
3
A5975AD
Electrical characteristics
TJ = -40 °C to 125 °C, VCC = 12 V, unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
VCC
RDS(on)
IL
fSW
Parameter
Test condition
Operating input
voltage range
V0 = 1.235 V; I0 = 2 A
Min.
Max.
Unit
36
V
0.250
0.5
Ω
3.1
3.6
4.1
A
425
500
575
kHz
100
%
1.235
1.272
V
5
7
mA
2.7
mA
4
MOSFET onresistance
Maximum limiting
current
VCC = 5 V
Switching frequency
Duty cycle
Typ.
0
Dynamic characteristics (see test circuit)
V5
4.4 V < VCC < 36 V,
20 mA < I0 < 2 A
Voltage feedback
1.198
DC characteristics
Iqop
Total operating
quiescent current
Iq
Quiescent current
Iqst-by
Total standby
quiescent current
Duty cycle = 0; VFB = 1.5 V
VINH > 2.2 V
50
100
µA
VCC = 36 V;
VINH > 2.2 V
50
100
µA
0.8
V
Inhibit
Device ON
INH threshold voltage
Device OFF
2.2
V
3.5
V
Error amplifier
VOH
High level output
voltage
VFB = 1 V
VOL
Low level output
voltage
VFB = 1.5 V
Source output current
VCOMP = 1.9 V; VFB = 1 V
Io sink
Sink output current
VCOMP = 1.9 V; VFB = 1.5 V
Ib
Source bias current
Io source
gm
DC open loop gain
RL = ∞
Transconductance
ICOMP = -0.1 mA to 0.1 mA;
VCOMP = 1.9 V
Doc ID 018761 Rev 1
V
190
300
µA
1
1.5
mA
2.5
Synch function
8/50
0.4
50
4
µA
65
dB
2.3
mS
A5975AD
Electrical characteristics
Table 4.
Symbol
Electrical characteristics (continued)
Parameter
Test condition
Min.
Typ.
2.5
Max.
Unit
VREF
V
0.74
V
0.25
0.45
mA
High input voltage
VCC = 4.4 to 36 V
Low input voltage
VCC = 4.4 to 36 V
Slave synch current(1)
Vsynch = 0.74 V
Vsynch = 2.33 V
0.11
0.21
Master output
amplitude
Isource = 3 mA
2.75
3
V
Output pulse width
No load, Vsynch = 1.65 V
0.20
0.35
µs
Reference voltage
IREF = 0 to 5 mA
VCC = 4.4 V to 36 V
3.2
3.3
3.399
V
Line regulation
IREF = 0 mA
VCC = 4.4 V to 36 V
5
10
mV
Load regulation
IREF = 0 mA
8
15
mV
18
35
mA
Reference section
Short-circuit current
5
1. Guaranteed by design.
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Datasheet parameters over the temperature range
4
A5975AD
Datasheet parameters over the temperature range
100% of the population in the production flow is tested at three different ambient
temperatures (-40 °C, +25 °C, +125 °C) to guarantee the datasheet parameters inside the
junction temperature range (-40 °C; +125 °C).
The device operation is guaranteed when the junction temperature is inside the (-40 °C;
+150 °C) temperature range. The user can estimate the silicon temperature increase with
respect to the ambient temperature evaluating the internal power losses generated during
device operation (please refer to Section 2.2).
However, the embedded thermal protection disables the switching activity to protect the
device in case the junction temperature reaches the TSHTDWN (+150 °C±10 °C)
temperature.
All the datasheet parameters can be guaranteed to a maximum junction temperature of
+125 °C, to avoid triggering the thermal shutdown protection during the testing phase due to
self heating.
10/50
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A5975AD
5
Functional description
Functional description
The main internal blocks are shown in the device block diagram in Figure 3. They are:
Figure 3.
●
A voltage regulator supplying the internal circuitry. From this regulator, a 3.3 V
reference voltage is externally available.
●
A voltage monitor circuit which checks the input and the internal voltages.
●
A fully integrated sawtooth oscillator with a frequency of 500 kHz ± 15%, including also
the voltage feed-forward function and an input/output synchronization pin.
●
Two embedded current limitation circuits which control the current that flows through
the power switch. The pulse-by-pulse current limit forces the power switch off cycle-bycycle if the current reaches an internal threshold, while the frequency shifter reduces
the switching frequency in order to significantly reduce the duty cycle.
●
A transconductance error amplifier.
●
A pulse width modulator (PWM) comparator and the relative logic circuitry necessary to
drive the internal power.
●
A high side driver for the internal P-MOS switch.
●
An inhibit block for standby operation.
●
A circuit to implement the thermal protection function.
Block diagram
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Functional description
5.1
A5975AD
Power supply and voltage reference
The internal regulator circuit (shown in Figure 4) consists of a start-up circuit, an internal
voltage pre-regulator, the bandgap voltage reference, and the bias block that provides
current to all the blocks. The starter supplies the start-up currents to the entire device when
the input voltage goes high and the device is enabled (inhibit pin connected to ground). The
pre-regulator block supplies the bandgap cell with a pre-regulated voltage, VREG, that has a
very low supply voltage noise sensitivity.
5.2
Voltage monitor
An internal block continuously senses the VCC, VREF and VBG. If the voltages go higher than
their thresholds, the regulator begins operating. There is also a hysteresis on the VCC
(UVLO).
Figure 4.
Internal circuit
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5.3
Oscillator and synchronization
Figure 5 shows the block diagram of the oscillator circuit.
The clock generator provides the switching frequency of the device, which is internally fixed
at 500 kHz. The frequency shifter block acts to reduce the switching frequency in case of
strong overcurrent or short-circuit. The clock signal is then used in the internal logic circuitry
and is the input of the ramp generator and synchronizer blocks.
The ramp generator circuit provides the sawtooth signal, used for PWM control and the
internal voltage feed-forward, while the synchronizer circuit generates the synchronization
signal. The device also has a synchronization pin which can work both as master and slave.
Beating frequency noise is an issue when more than one voltage rail is on the same board.
A simple way to avoid this issue is to operate all the regulators at the same switching
frequency.
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Functional description
The synchronization feature of a set of the A5975AD is simply obtained by connecting
together their SYNCH pins. The device with the highest switching frequency is the master
which provides the synchronization signal to the others. Therefore the SYNCH is an I/O pin
to deliver or recognize a frequency signal. The synchronization circuitry is powered by the
internal reference (VREF) so a small filtering capacitor (≥ 100 nF) connected between the
VREF pin and the signal ground of the master device is recommended for its proper
operation. However, when a set of synchronized devices populates a board it is not possible
to know in advance the one working as master, so the filtering capacitor must be designed
for a whole set of devices.
When one or more devices are synchronized to an external signal, its amplitude must be in
compliance with specifications given in Table 4. The frequency of the synchronization signal
must be, at a minimum, higher than the maximum guaranteed natural switching frequency of
the device (275 kHz, see Table 4) while the duty cycle of the synchronization signal can vary
from approximately 10% to 90%. The small capacitor under VREF pin is required for this
operation.
Figure 5.
Oscillator circuit block diagram
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Functional description
Figure 6.
A5975AD
Synchronization example
287
6> C0+CP):
Equation 3
1
F P1 = --------------------------------2 ⋅ π ⋅ R0 ⋅ Cc
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Closing the loop
Equation 4
1
F P2 = --------------------------------------------------2 ⋅ π ⋅ Rc ⋅ ( C0 + Cp )
whereas the zero is defined as:
Equation 5
1
F Z1 = --------------------------------2 ⋅ π ⋅ Rc ⋅ Cc
FP1 is the low frequency which sets the bandwidth, while the zero FZ1 is usually put near to
the frequency of the double pole of the LC filter (see below). FP2 is usually at a very high
frequency.
7.2
LC filter
The transfer function of the LC filter is given by:
Equation 6
R LOAD ⋅ ( 1 + ESR ⋅ C OUT ⋅ s )
A LC ( s ) = -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------2
s ⋅ L ⋅ C OUT ⋅ ( ESR + R LOAD ) + s ⋅ ( ESR ⋅ C OUT ⋅ R LOAD + L ) + R LOAD
where RLOAD is defined as the ratio between VOUT and IOUT.
If RLOAD>>ESR, the previous expression of ALC can be simplified and becomes:
Equation 7
1 + ESR ⋅ C OUT ⋅ s
A LC ( s ) = ---------------------------------------------------------------------------------------2
L ⋅ C OUT ⋅ s + ESR ⋅ C OUT ⋅ s + 1
The zero of this transfer function is given by:
Equation 8
1
F O = -----------------------------------------------2 ⋅ π ⋅ ESR ⋅ C OUT
F0 is the zero introduced by the ESR of the output capacitor and it is very important to
increase the phase margin of the loop.
The poles of the transfer function can be calculated through the following expression:
Equation 9
2
– ESR ⋅ C OUT ± ( ESR ⋅ C OUT ) – 4 ⋅ L ⋅ C OUT
F PLC1, 2 = ---------------------------------------------------------------------------------------------------------------------------------------2 ⋅ L ⋅ C OUT
In the denominator of ALC the typical second order system equation can be recognized:
Equation 10
2
s + 2 ⋅ δ ⋅ ωn ⋅ s + ω
2
n
If the damping coefficient δ is very close to zero, the roots of the equation become a double
root whose value is ωn.
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Closing the loop
A5975AD
Similarly for ALC the poles can usually be defined as a double pole whose value is:
Equation 11
1
F PLC = -----------------------------------------2 ⋅ π ⋅ L ⋅ C OUT
7.3
PWM comparator
The PWM gain is given by the following formula:
Equation 12
V cc
G PWM ( s ) = ------------------------------------------------------------( V OSCMAX – V OSCMIN )
where VOSCMAX is the maximum value of a sawtooth waveform and VOSCMIN is the
minimum value. A voltage feed-forward is implemented to ensure a constant GPWM. This is
obtained by generating a sawtooth waveform directly proportional to the input voltage VCC.
Equation 13
V OSCMAX – V OSCMIN = K ⋅ V CC
where K is equal to 0.038. Therefore the PWM gain is also equal to:
Equation 14
1- = const
G PWM ( s ) = --K
This means that even if the input voltage changes, the error amplifier does not change its
value to keep the loop in regulation, therefore ensuring a better line regulation and line
transient response.
In summary, the open loop gain can be expressed as:
Equation 15
R2
G ( s ) = G PWM ( s ) ⋅ -------------------- ⋅ A O ( s ) ⋅ A LC ( s )
R1 + R2
Example:
Considering RC = 4.7 kΩ, CC = 22 nF and CP = 150 pF, the poles and zeroes of A0 are:
FP1 = 9 Hz
FP2 = 220 kHz
FZ1 = 1.6 kHz
If L = 10 µH, COUT = 330 µF and ESR = 25 mΩ, the poles and zeroes of ALC become:
FPLC = 2.8 kHz
FZESR = 20 kHz
F0 = 44 kHz
Finally R1 = 5.6 kΩ and R2 = 3.3 kΩ.
The gain and phase bode diagrams are plotted respectively in Figure 11 and Figure 12.
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Closing the loop
Figure 11. Module plot
Figure 12. Phase plot
The cut-off frequency and the phase margin are:
Equation 16
F C = 44kHz
Phase margin = 54°
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8
Application information
8.1
Component selection
Input capacitor
The input capacitor must be able to support the maximum input operating voltage and the
maximum RMS input current.
As step-down converters draw current from the input in pulses, the input current is squared
and the height of each pulse is equal to the output current. The input capacitor has to
absorb all this switching current, which can be up to the load current divided by two (worst
case, with duty cycle of 50%). For this reason, the quality of these capacitors must be very
high to minimize the power dissipation generated by the internal ESR, thereby improving
system reliability and efficiency. The critical parameter is usually the RMS current rating,
which must be higher than the RMS input current. The maximum RMS input current (flowing
through the input capacitor) is:
Equation 17
2
2
⋅ D - + -----DI RMS = I O ⋅ D – 2
-------------2
η
η
where η is the expected system efficiency, D is the duty cycle and IO is the output DC
current. This function reaches its maximum value at D = 0.5 and the equivalent RMS current
is equal to IO divided by 2 (considering η = 1). The maximum and minimum duty cycles are:
Equation 18
V OUT + V F
D MAX = -----------------------------------V INMIN – V SW
and
Equation 19
V OUT + V F
D MIN = ------------------------------------V INMAX – V SW
where VF is the freewheeling diode forward voltage and VSW the voltage drop across the
internal PDMOS. Considering the range DMIN to DMAX, it is possible to determine the max
IRMS going through the input capacitor. Capacitors that can be considered are:
Electrolytic capacitors:
These are widely used due to their low price and their availability in a wide range of RMS
current ratings.
The only drawback is that, considering ripple current rating requirements, they are physically
larger than other capacitors.
Ceramic capacitors:
If available for the required value and voltage rating, these capacitors usually have a higher
RMS current rating for a given physical dimension (due to very low ESR).
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The drawback is the considerably high cost.
Tantalum capacitors:
Very good, small tantalum capacitors with very low ESR are becoming more available.
However, they can occasionally burn if subjected to very high current during charge.
Therefore, it is better to avoid this type of capacitor for the input filter of the device. They can,
however, be subjected to high surge current when connected to the power supply.
Table 6.
List of ceramic capacitors for the A5975AD
Manufacturer
Series
Capacitor value (µ)
Rated voltage (V)
TAIYO YUDEN
UMK325BJ106MM-T
10
50
MURATA
GRM42-2 X7R 475K 50
4.7
50
Output capacitor
The output capacitor is very important to meet the output voltage ripple requirement.
Using a small inductor value is useful to reduce the size of the choke but it increases the
current ripple. So, to reduce the output voltage ripple, a low ESR capacitor is required.
Nevertheless, the ESR of the output capacitor introduces a zero in the open loop gain,
which helps to increase the phase margin of the system. If the zero goes to a very high
frequency, its effect is negligible. For this reason, ceramic capacitors and very low ESR
capacitors in general should be avoided.
Tantalum and electrolytic capacitors are usually a good choice for this purpose. A list of
some tantalum capacitor manufacturers is provided in Table 7.
Table 7.
Output capacitor selection
Manufacturer
Series
Cap value (µF)
Rated voltage (V)
ESR (mΩ)
Sanyo POSCAP(1)
TAE
47 to 680
2.5 to 10
25 to 35
TV
68 to 330
4 to 6.3
25 to 40
TPS
100 to 470
4 to 35
50 to 200
KEMET
T494/5
100 to 470
4 to 20
30 to 200
Sprague
595D
220 to 390
4 to 20
160 to 650
AVX
1. POSCAP capacitors have some characteristics which are very similar to tantalum.
Inductor
The inductor value is very important as it fixes the ripple current flowing through the output
capacitor. The ripple current is usually fixed at 20 - 40% of IOmax, which is 0.6 - 1.2 A with
IOmax = 3 A. The approximate inductor value is obtained using the following formula:
Equation 20
( V IN – V OUT )
L = ---------------------------------- ⋅ T ON
ΔI
where TON is the ON time of the internal switch, given by D · T. For example, with
VOUT = 3.3 V, VIN = 12 V and ΔIO = 0.9 A, the inductor value is about 12 µH. The peak
current through the inductor is given by:
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A5975AD
Equation 21
I PK = I O + ΔI
----2
and it can be observed that if the inductor value decreases, the peak current (which must be
lower than the current limit of the device) increases. So, when the peak current is fixed, a
higher inductor value allows a higher value for the output current. In Table 8, some inductor
manufacturers are listed.
Table 8.
Inductor selection
Manufacturer
Series
Inductor value (µH)
Saturation current (A)
Coilcraft
DO3316T
5.6 to 12
3.5 to 4.7
Coilcraft
MSS1260T
5.6 to 15
3.5 to 8
WE-PD L
4.7 to 27
3.55 to 6
Wurth Elektronik
8.2
Layout considerations
The layout of switching DC-DC converters is very important to minimize noise and
interference. Power-generating portions of the layout are the main cause of noise and so
high switching current loop areas should be kept as small as possible and lead lengths as
short as possible.
High impedance paths (in particular the feedback connections) are susceptible to
interference, so they should be as far as possible from the high current paths. A layout
example is provided in Figure 13 below.
The input and output loops are minimized to avoid radiation and high frequency resonance
problems. The feedback pin connections to the external divider are very close to the device
to avoid pick-up noise. Another important issue is the ground plane of the board. Since the
package has an exposed pad, it is very important to connect it to an extended ground plane
in order to reduce the thermal resistance junction-to-ambient.
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Figure 13. Layout example
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8.3
Thermal considerations
8.3.1
Thermal resistance RTHJ-A
RTHJ-A is the equivalent static thermal resistance junction-to-ambient of the device; it can be
calculated as the parallel of many paths of heat conduction from the junction to the ambient.
For this device, the path through the exposed pad is the one conducting the largest amount
of heat. The static RTHJ-A measured on the application is about 40 °C/W.
The junction temperature of the device is:
Equation 22
T J = T A + R thJA ⋅ P TOT
The dissipated power of the device is tied to three different sources:
Conduction losses due to the not insignificant RDS(on), which are equal to:
Equation 23
2
P ON = R DS ( on ) ⋅ ( I OUT ) ⋅ D
where D is the duty cycle of the application. Note that the duty cycle is theoretically given by
the ratio between VOUT and VIN, but in practice it is substantially higher than this value to
compensate for the losses in the overall application. For this reason, the switching losses
related to the RDS(on) increases compared to an ideal case.
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A5975AD
Switching losses due to turning on and off. These are derived using the following
equation:
Equation 24
( T ON + T OFF )
P SW = V IN ⋅ I OUT ⋅ ------------------------------------ ⋅ F SW = V IN ⋅ I OUT ⋅ T SW ⋅ F SW
2
where TRISE and TFALL represent the switching times of the power element that cause the
switching losses when driving an inductive load (see Figure 14). TSW is the equivalent
switching time.
Figure 14. Switching losses
Quiescent current losses.
Equation 25
P Q = V IN ⋅ I Q
where IQ is the quiescent current.
Example:
–
VIN = 12 V
–
VOUT = 3.3 V
–
IOUT = 2.5 A
RDS(on) has a typical value of 0.25 @ 25 °C and increases up to a maximum value of 0.5. @
150 °C. We can consider a value of 0.4 Ω.
TSW is approximately 70 ns.
IQ has a typical value of 5 mA @ VIN = 12 V.
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The overall losses are:
Equation 26
2
P TOT = R DS ( on ) ⋅ ( I OUT ) ⋅ D + V IN ⋅ I OUT ⋅ T SW ⋅ F SW + V IN ⋅ I Q =
2
= 0.4 ⋅ 2 ⋅ 0.3 + 12 ⋅ 2 ⋅ 70 ⋅ 10
–9
3
⋅ 500 ⋅ 10 + 12 ⋅ 5 ⋅ 10
–3
≅ 1.38W
The junction temperature of the device is:
Equation 27
T J = T A + R thJA ⋅ P TOT
Equation 28
T J = 60 + 1.38 ⋅ 42 ≅ 128°C
8.3.2
Thermal impedance ZthJ-A(t)
The thermal impedance of the system, considered as the device in HSO8 package soldered
on the application board, takes on an important rule when the maximum output power is
limited by the static thermal performance and not by the electrical performance of the
device. Therefore, the embedded power elements could manage an higher current but the
system is already taking away the maximum power generated by the internal losses.
In case the output power increases, the thermal shutdown is triggered because the junction
temperature triggers the designed thermal shutdown threshold.
The RTH is a static parameter of the package; it sets the maximum power loss which can be
generated from the system given the operation conditions.
If we suppose, as an example, TA = 40 °C, 140 °C is the maximum operating temperature
before triggering the thermal shutdown and RTH = 40 °C/W, therefore, the maximum power
loss achievable with the thermal performance of the system is:
ΔT- = T
J MAX – T AMB
P MAX DC = ---------------------------------------------- = 100
---------- = 2.5W
R TH
R TH
40
Figure 15 represents the estimation of power losses for different output voltages at VIN=5 V
and TAMB=40 °C. The calculations are performed considering the RDS(on) of the power
element equal to 0.4 A.
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Figure 15. Power losses estimation (VIN = 5 V, fSW = 500 kHz)
The red trace represents the maximum power which can be taken away, as calculated
above, whilst the other traces are the total internal losses for different output voltage.
The embedded conduction losses are proportional to the duty cycle required for the
conversion. Assuming the input voltage constant, the switching losses are proportional to
the output current while the quiescent losses can be considered as constant.
As a consequence, in Figure 15, the maximum power loss is for VOUT=3.3 V, where the
system can manage a continuous output current up to 2.4 A. The device could deliver a
continuous output current up to 2.5 A to the load, however, the maximum power loss of 2.5
W is reached with an output current of 2.4 A, so the maximum output power is derated.
Figure 16 plots the power losses for VIN=12 V and the main output rails.
Figure 16. Power losses estimation (VIN = 12 V, fSW = 500 kHz)
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At TAMB=40 °C and VIN=12 V, the device is no more thermally limited (see Figure 16).
As a consequence, the calculation of the internal power losses must be done for each
specific operating condition given by the final application.
In applications where the current to the output is pulsed, the thermal impedance should be
considered instead of the thermal resistance.
The thermal impedance of the system could be much lower than the thermal resistance,
which is a static parameter. As a consequence, the maximum power losses can be higher
than 2.5 W if a pulsed output power is requested from the load:
T J MAX – T AMB
ΔT - = ------------------------------------P MAX ( t ) = ---------------Z TH ( t )
Z TH ( t )
Therefore, depending on the pulse duration and its frequency, the maximum output current
can be delivered to the load.
The characterization of the thermal impedance is strictly dependent on the layout of the
board. In Figure 17 the measurement of the thermal impedance of the demonstration board
of the A5975AD is provided.
Figure 17. Measurement of the thermal impedance of the demonstration board
As can be seen, for example, for load pulses with a duration of 1 second, the actual thermal
impedance is lower than 20 °C/W. This means that, for short pulses, the device can deliver a
higher output current value.
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8.4
A5975AD
RMS current of the embedded power MOSFET
As the A5975AD embeds the high side switch, the internal power dissipation is sometimes
the bottleneck for the output current capability (refer to Section 8.3 for an estimation of the
operating temperature).
Nevertheless, as mentioned in the general description on page 1, the device can manage a
continuous output current of 2.5 A in most of the application conditions.
However, the rated maximum RMS current of the power elements is 2 A, where:
I RMS HS = I LOAD ⋅ D
and the real duty cycle is D:
V OUT + ( R DS(on) LS + DCR ) ⋅ I LOAD
D = --------------------------------------------------------------------------------------------------V IN + ( R DS(on) LS – R DS(on) HS ) ⋅ I LOAD
Fixing the limit of 2 A for IRMS HS, the maximum output current can be derived, as illustrated
in Figure 18.
Figure 18. Maximum continuous output current vs. duty cycle
8.5
Short-circuit protection
In overcurrent protection mode, when the peak current reaches the current limit, the device
reduces the TON down to its minimum value (approximately 250 nsec) and the switching
frequency to approximately one third of its nominal value even when synchronized to an
external signal (see Section 5.4). In these conditions, the duty cycle is strongly reduced and,
in most applications, this is enough to limit the current to ILIM. In any event, in case of heavy
short-circuit at the output (VO = 0 V) and depending on the application conditions (VCC value
and parasitic effect of external components), the current peak could reach values higher
than ILIM.
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This can be understood considering the inductor current ripple during the ON and OFF
phases:
On phase
Equation 29
V IN – V out – ( DCR L + R DS(on) ) ⋅ I
ΔI L TON = -------------------------------------------------------------------------------------- ( T ON )
L
Off phase
Equation 30
– ( V D + V out + DCR L ⋅ I )
ΔI L TOFF = -------------------------------------------------------------- ( T OFF )
L
where VD is the voltage drop across the diode, DCRL is the series resistance of the inductor.
In short-circuit conditions VOUT is negligible, so during TOFF the voltage across the inductor
is very small, as equal to the voltage drop across parasitic components (typically the DCR of
the inductor and the VFW of the free-wheeling diode) while during TON, the voltage applied
to the inductor is instead maximized as approximately equal to VIN.
So, Equation 29 and 30 in overcurrent conditions can be simplified to:
Equation 31
V IN – ( DCR L + R DS(on) ) ⋅ I
V IN
ΔI L TON = ------------------------------------------------------------------ ( T ON MIN ) ≅ --------- ( 250ns )
L
L
considering TON, which has already been reduced to its minimum.
Equation 32
– ( V D + V out + DCR L ⋅ I )
– ( V D + V out + DCR L ⋅ I )
ΔI L TOFF = -------------------------------------------------------------- ( 3 ⋅ T SW ) ≅ -------------------------------------------------------------- ( 12μs )
L
L
considering that fSW has been already reduced to one third of the nominal.
In case a short-circuit at the output is applied, and VIN = 12 V, the inductor current is
controlled in most of the applications (see Figure 19). When the application must sustain the
short-circuit condition for an extended period, the external components (mainly the inductor
and diode) must be selected based on this value.
In case the VIN is very high, it could occur that the ripple current during TOFF (Equation 32)
does not compensate the current increase during TON (Equation 31). Figure 21 shows an
example of a power-up phase with VIN = VIN MAX = 36 V where ΔIL TON > ΔIL TOFF, so the
current escalates and the balance between Equation 31 and Equation 32 occurs at a current
slightly higher than the current limit. This must be taken into account in particular to avoid
the risk of an abrupt inductor saturation.
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Figure 19. Short-circuit current VIN = 12 V
Figure 20. Short-circuit current VIN = 24 V
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Figure 21. Short-circuit current VIN = 36 V
8.6
Application circuit
Figure 22 shows the demonstration board application circuit, where the input supply voltage,
VCC, can range from 4 V to 36 V and the output voltage is adjustable from 1.235 V to 6.3 V
due to the voltage rating of the output capacitor.
Figure 22. Demonstration board application circuit
N&
P&
K
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Table 9.
A5975AD
Component list
Reference
C1
Part number
UMK325BJ106MM-T
Description
10 µF, 50 V
C2
68 nF, 5%, 0603
C3
150 pF, 5%, 0603
C4
22 nF, 5%, 0603
C10
POSCAP 6TVB330ML
330 µF, 25 mΩ
R1
5.6 kΩ, 1%, 0.1 W 0603
R2
3.3 kΩ, 1%, 0.1 W 0603
R3
4.7 kΩ, 1%, 0.1 W 0603
D1
STPS3L40U
3 A, 40 V
L1
MSS1246T-103ML
10 µH, IRMS 20 °C 2.8 A
Manufacturer
Taiyo Yuden
Sanyo
STMicroelectronics
Coilcraft
Figure 23. PCB layout (component side)
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Figure 24. PCB layout (bottom side)
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Figure 25. PCB layout (front side)
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8.7
Positive buck-boost regulator
The device can be used to implement a step-up/down converter with a positive output
voltage.
The output voltage is given by:
Equation 33
D
V OUT = V IN ⋅ ------------1–D
where the ideal duty cycle D for the buck boost converter is:
Equation 34
V OUT
D = ----------------------------V IN + V OUT
However, due to power losses in the passive elements, the real duty cycle is always higher
than this. The real value (that can be measured in the application) should be used in the
following formulas.
The peak current flowing in the embedded switch is:
Equation 35
I LOAD V IN D
I LOAD I RIPPLE
I SW = -------------- + -------------------- = -------------- + ----------- ⋅ --------1–D
2
1 – D 2 ⋅ L f SW
while its average current is equal to:
Equation 36
I LOAD
I SW = -------------1–D
This is due to the fact that the current flowing through the internal power switch is delivered
to the output only during the OFF phase.
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The switch peak current must be lower than the minimum current limit of the overcurrent
protection (see Table 4 for details) while the average current must be lower than the rated
DC current of the device.
As a consequence, the maximum output current is:
Equation 37
I OUT MAX ≅ I SW MAX ⋅ ( 1 – D )
where ISW MAX represents the rated current of the device.
The current capability is reduced by the term (1-D) and so, for example, with a duty cycle of
0.5, and considering an average current through the switch of 3 A, the maximum output
current deliverable to the load is 1.5 A.
Figure 26 below shows the circuit schematic of this topology for a 12 V output voltage and
5 V input.
Figure 26. Positive buck-boost regulator
6
A5975AD
470
10V
ESR>35mΩ
4.7
6.8
AM09669v1
8.8
Negative buck-boost regulator
In Figure 27, the schematic circuit for a standard buck-boost topology is shown. The output
voltage is:
Equation 38
D
V OUT = – V IN ⋅ ------------1–D
where the ideal duty cycle D for the buck-boost converter is:
Equation 39
– V OUT
D = ----------------------------V IN – V OUT
The considerations given in Section 8.8 for the real duty cycle are still valid here. Also
Equation 35 to 37 can be used to calculate the maximum output current. So, for example,
considering the conversion VIN = 12 V to VOUT = -5 V, ILOAD = 0.5 A:
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Equation 40
5 - = 0.706
D = --------------5 + 12
Equation 41
I LOAD
0.5 - = 1.7A
- = ----------------------I SW = -------------1–D
1 – 0.706
An important point to take into account is that the ground pin of the device is connected to
the negative output voltage. Therefore, the device is subjected to a voltage equal to VIN-VO,
which must be lower than 36 V (the maximum operating input voltage).
Figure 27. Negative buck-boost regulator
A5975AD
6
Ω
AM09670v1
8.9
Floating boost current generator
The A5975AD does not support a nominal boost conversion as this topology requires a low
side switch, however, a floating boost can be useful in applications where the load can be
floating. A typical example is a current generator for LEDs driving, as the LED does not
require a connection to the ground.
Figure 28. Floating boost topology
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A5975AD
Figure 29. 350 mA LED boost current source
73
9$&
73
X9
8
'
'
9'&
6736/8
73
/
6736/8
9&&
6ϭϬђ,
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ϵϬ͘ϬϬ
ϴϱ͘ϬϬ
sKhdϴs
sKhdϱs
ϴϬ͘ϬϬ
sKhdϯ͘ϯs
sKhdϮ͘ϱs
ϳϱ͘ϬϬ
sKhdϭ͘ϴs
ϳϬ͘ϬϬ
ϲϱ͘ϬϬ
ϲϬ͘ϬϬ
Ϭ͘Ϭ
Ϭ͘ϱ
ϭ͘Ϭ
ϭ͘ϱ
Ϯ͘Ϭ
Ϯ͘ϱ
!-V
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Typical characteristics
Figure 39. Efficiency vs. output current (VIN = 5 V)
s/E ϱsͲ Ĩ^t ϱϬϬŬ,njͲ >ϭϬђ,
ϵϬ͘ϬϬ
ϴϱ͘ϬϬ
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sKhdϮ͘ϱs
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sKhdϭ͘ϴs
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Ϭ͘Ϭ
Ϭ͘ϱ
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!-V
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Package mechanical data
10
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions, and product status are available at: www.st.com.
ECOPACK is an ST trademark.
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Package mechanical data
Table 10.
HSOP8 mechanical data
mm
inch
Dim.
Min.
Typ.
A
Max.
Min.
Typ.
1.70
Max.
0.0669
A1
0.00
A2
1.25
b
0.31
0.51
0.0122
0.0201
c
0.17
0.25
0.0067
0.0098
D
4.80
4.90
5.00
0.1890
0.1929
0.1969
D1
3
3.1
3.2
0.118
0.122
0.126
E
5.80
6.00
6.20
0.2283
0.2441
E1
3.80
3.90
4.00
0.1496
0.1575
E2
2.31
2.41
2.51
0.091
e
0.10
0.00
0.0039
0.0492
0.095
0.099
1.27
h
0.25
0.50
0.0098
0.0197
L
0.40
1.27
0.0157
0.0500
k
0° (min), 8° (max)
ccc
0.10
0.0039
Figure 40. Package dimensions
$
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Ordering information
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Ordering information
Table 11.
Ordering information
Order codes
Package
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Packaging
Tube
HSOP8
A5975ADTR
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Tape and reel
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12
Revision history
Revision history
Table 12.
Document revision history
Date
Revision
19-Apr-2011
1
Changes
Initial release
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