A6986H
Datasheet
Automotive 38 V, 2 A synchronous step-down switching regulator with 30 μA
quiescent current
Features
•
•
•
•
•
AEC-Q100 qualified
2 A DC output current
4 V to 38 V operating input voltage
Low consumption mode or low noise mode
30 µA IQ at light-load (LCM VOUT = 3.3 V)
•
8 µA IQ-SHTDWN
•
Adjustable fSW (250 kHz - 2 MHz)
•
Fixed output voltage (3.3 V and 5 V) or adjustable from 0.85 V to VIN
•
•
•
•
•
•
•
•
Embedded output voltage supervisor
Synchronization
Adjustable soft-start time
Internal current limiting
Overvoltage protection
Output voltage sequencing
Peak current mode architecture
RDS(on) HS = 180 mΩ, RDS(on) LS = 150 mΩ
•
Thermal shutdown
Applications
Product status link
A6986H
•
•
•
•
Designed for automotive systems
Battery powered applications
Car body applications (LCM)
Car audio and low noise applications (LNM)
Description
The A6986H automotive grade device is a step-down monolithic switching regulator
able to deliver up to 2 A DC. The output voltage adjustability ranges from 0.85 V to
VIN. The 100% duty cycle capability and the wide input voltage range meet the cold
crank and load dump specifications for automotive systems. The “low consumption
mode” (LCM) is designed for applications active during car parking, so it maximizes
the efficiency at light-load with controlled output voltage ripple. The “low noise mode”
(LNM) makes the switching frequency constant and minimizes the output voltage
ripple overload current range, meeting the low noise application specification like car
audio. The output voltage supervisor manages the reset phase for any digital load
(µC, FPGA). The RST open collector output can also implement output voltage
sequencing during the power-up phase. The synchronous rectification, designed for
high efficiency at medium - heavy load, and the high switching frequency capability
make the size of the application compact. Pulse by pulse current sensing on both
power elements implements an effective constant current protection.
DS12861 - Rev 1 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
A6986H
Application schematic
1
Application schematic
Figure 1. Application schematic
uC RST
4
15
VIN
2
10uF
5
1uF
6
3
8
470nF 68nF
10nF
SYNCH
RST
VIN
VBIAS
VCC
FSW
MLF
LX
LX
VOUT
10uH
240k
FB
SS/INH
17
16
13
14
A6986H
DELAY
EP
1
COMP
SGND PGND
10
11
9
75k
7
PGND
12
2.2p
20uF
330p
82k
signal GND
power GND
DS12861 - Rev 1
GND
page 2/70
A6986H
Pin settings
2
Pin settings
2.1
Pin connection
Figure 2. Pin connection (top view)
2.2
RST
1
16
VBIAS
VCC
2
15
VIN
SS/INH
3
14
LX
SYNCH/ISKIP
4
13
LX
FSW
5
12
PGND
MLF
6
11
PGND
COMP
7
10
SGND
DELAY
8
9
VOUT
EXPOSED
PAD TO
SGND+PGND
Pin description
Table 1. Pin description
Number
DS12861 - Rev 1
Pin
Description
1
RST
The RST open collector output is driven low when the output
voltage is out of regulation. The RST is released after an
adjustable time DELAY once the output voltage is over the active
delay threshold.
2
VCC
Connect a ceramic capacitor (≥ 470 nF) to filter internal voltage
reference. This pin supplies the embedded analog circuitry.
3
SS/INH
An open collector stage can disable the device clamping this pin
to GND (INH mode). An internal current generator (4 µA typ.)
charges the external capacitor to implement the soft-start.
The pin features master / slave synchronization in LNM (see
Section 5.8.1 Low noise mode (LNM)) and skip current level
selection in LCM (see Section 5.8.2 Low consumption mode
(LCM)). In LNM, leave this pin floating when it is not used.
4
SYNCH/ ISKP
5
FSW
A pull-up resistor (E24 series only) to VCC or pull down to GND
selects the switching frequency. Pin strapping is active only
before the soft-start phase to minimize the IC consumption.
6
MLF
A pull-up resistor (E24 series only) to VCC or pull-down to GND
selects the low consumption mode/low noise mode and the active
RST threshold. Pin strapping is active only before the soft-start
phase to minimize the IC consumption.
7
COMP
Output of the error amplifier. The designed compensation
network is connected at this pin.
page 3/70
A6986H
Pin description
Number
DS12861 - Rev 1
Pin
Description
8
DELAY
An external capacitor connected to this pin sets the time DELAY
to assert the rising edge of the RST o.c. after the output voltage
is over the reset threshold. If this pin is left floating, RST is like a
Power Good.
9
VOUT
Output voltage sensing
10
SGND
Signal GND
11
PGND
Power GND
12
PGND
Power GND
13
LX
Switching node
14
LX
Switching node
15
VIN
DC input voltage
16
VBIAS
-
Exposed pad
Typically connected to the regulated output voltage. An external
voltage reference can be used to supply part of the analog
circuitry to increase the efficiency at light-load. Connect to GND if
not used.
Exposed pad must be connected to SGND, PGND
page 4/70
A6986H
Maximum ratings
2.3
Maximum ratings
Stressing the device above the rating listed in Table 2. Absolute maximum ratings may cause permanent damage
to the device. These are stress ratings only and operation of the device at these or any other conditions above
those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Table 2. Absolute maximum ratings
Symbol
Min.
Max.
Unit
VIN
-0.3
40
V
DELAY
-0.3
VCC+ 0.3
V
PGND
SGND - 0.3
SGND + 0.3
V
SGND
-
-
V
VCC
-0.3
(VIN+ 0.3) or (max. 4)
V
SS /INH
-0.3
VIN+ 0.3
V
-0.3
VCC+ 0.3
V
-0.3
VCC+ 0.3
V
VOUT
-0.3
10
V
FSW
-0.3
VCC+ 0.3
V
SYNCH
-0.3
VIN+ 0.3
V
VBIAS
-0.3
(VIN+ 0.3) or (max. 6)
V
RST
-0.3
VIN+ 0.3
V
LX
-0.3
VIN+ 0.3
V
MLF
COMP
2.4
Description
See Table 1. Pin description
TJ
Operating temperature range
-40
150
°C
TSTG
Storage temperature range
-
-65 to 150
°C
TLEAD
Lead temperature (soldering 10 s.)
-
260
°C
IHS, ILS
High-side / low-side switch current
-
2
A
Thermal data
Table 3. Thermal data
Symbol
2.5
Parameter
Value Unit
RthJA
Thermal resistance junction ambient (device soldered on the STMicroelectronics demonstration
board)
40
°C/W
RthJC
Thermal resistance junction to exposed pad for board design (not suggested to estimate TJ from
power losses)
5
°C/W
ESD protection
Table 4. ESD protection
Symbol
ESD
DS12861 - Rev 1
Test conditions
Value
Unit
HBM
2
kV
CDM
500
V
page 5/70
A6986H
Electrical characteristics
3
Electrical characteristics
TJ = -40 to 135 °C, VIN = 12 V unless otherwise specified.
Table 5. Electrical characteristics
Symbol
Parameter
Test conditions
Note
Min.
Typ.
Max.
VIN
Operating input voltage
range
-
-
4
-
38
VIN_H
VCC UVLO rising
threshold
-
-
2.7
-
3.5
VIN_L
VCC UVLO falling
threshold
-
-
2.4
-
3.5
Duty cycle < 20%
-
2.55
-
-
IPK
Peak current limit
Duty cycle = 100% closed
loop operation
-
2.1
-
-
IVY
Valley current limit
-
-
2.7
-
-
LCM, VSYNCH = GND
(1)
0.6
0.8
LCM, VSYNCH = VCC
(2)
-
0.2
-
-
ISKIPH
ISKIPL
Programmable skip
current limit
Unit
V
A
IVY_SNK
Reverse current limit
LNM or VOUT overvoltage
-
0.8
1
2
RDS(on) HS
High-side RDSON
ISW=1 A
-
-
0.18
0.36
RDS(on) LS
Low-side RDSON
ISW=1 A
-
-
0.15
0.30
fSW
Selected switching
frequency
FSW pinstrapping before
SS
-
IFSW
FSW biasing current
SS ended
-
LCM/LNM
Low noise mode /low
consumption mode
selection
MLF pinstrapping before SS
-
IMLF
MLF biasing current
SS ended
-
-
0
500
nA
D
Duty cycle
-
(2)
0
-
100
%
TON MIN
Minimum on-time
-
-
-
80
-
ns
VBIAS = GND (no
switchover)
-
2.9
3.3
3.6
VBIAS = 5 V (switchover)
-
2.9
3.3
3.6
Switch internal supply from
VIN
-
2.85
-
3.2
-
2.78
-
3.15
-
4
8
15
Ω
See Table 6. fSW selection
-
0
500
nA
See Table 7. LNM/ LCM selection
(A6986H3V3), Table 8. LNM/ LCM selection
(A6986H5V) and Table 9. LNM/ LCM
selection (A6986H)
VCC regulator
VCC
SWO
LDO output voltage
VBIAS threshold
(3 V< VBIAS TSS SETUP AND VEA
+VINH AND VFB< VTH4
mA sinking load
-
-
-
0.4
2 VTHD
VFB> VTHR
-
1.19
1.234
1.258
V
ID CH
CDELAY charging
current
VFB> VTHR
-
1
2
3
µA
Thermal shutdown
TSHDWN
Thermal shutdown
temperature
-
(2)
-
165
-
THYS
Thermal shutdown
hysteresis
-
(2)
-
30
-
°C
1. Parameter tested in static condition during testing phase. Parameter value may change over dynamic application conditions.
2. Not tested in production.
3. LCM enables SLEEP mode at light-load.
4. TJ = - 40 °C.
5. Measured at fsw = 250 kHz.
DS12861 - Rev 1
page 8/70
A6986H
Electrical characteristics
TJ = -40 to 135 °C, VIN= 12 V unless otherwise specified.
Table 6. fSW selection
Symbol
RVCC (E24 series)
fSW
RGND (E24 series)
Tj
fSW min.
fSW typ.
fSW max.
0Ω
NC
(1)
225
250
275
1.8 Ω
NC
-
285
-
3.3 kΩ
NC
-
330
-
5.6 kΩ
NC
-
380
-
10 kΩ
NC
-
435
-
450
500
550
-
575
-
-
660
-
-
755
-
-
870
-
900
1000
1100
-
1150
-
-
1310
-
NC
0Ω
18 kΩ
NC
33 kΩ
NC
56 kΩ
NC
NC
1.8 kΩ
NC
3.3 kΩ
NC
5.6 kΩ
NC
10 kΩ
NC
18 kΩ
NC
NC
(1)(2)
(3)
(1) (3)
(3)
(2) (3)
Unit
kHz
-
1500
-
33 kΩ
(3)
1575
1750
1925
56 kΩ
(3)
1800
2000
2200
1. Synchronization as slave in LNM between 275 kHz and 1400 kHz.
2. Not tested in production
3. Synchronization as slave in LNM between 475 kHz and 2200 kHz
TJ = -40 to 135 °C, VIN = 12 V unless otherwise specified.
Table 7. LNM/ LCM selection (A6986H3V3)
Symbol RVCC(E24 1%) RGND(E24 1%) Operating mode
VRST
DS12861 - Rev 1
0Ω
NC
8.2 kΩ
NC
18 kΩ
NC
39 kΩ
VRST/VOUT (tgt.
value)
VRST min. VRST typ. VRST max. Unit
93%
3.008
3.069
3.130
80%
2.587
2.640
2.693
87%
2.814
2.871
2.928
NC
96%
3.105
3.168
3.231
NC
0Ω
93%
3.008
3.069
3.130
NC
8.2 kΩ
80%
2.587
2.640
2.693
NC
18 kΩ
87%
2.814
2.871
2.928
NC
39 kΩ
96%
3.105
3.168
3.231
LCM
LNM
V
page 9/70
A6986H
Electrical characteristics
TJ = -40 to 135 °C, VIN = 12 V unless otherwise specified.
Table 8. LNM/ LCM selection (A6986H5V)
Symbol RVCC(E24 1%) RGND(E24 1%) Operating mode
VRST
0Ω
NC
8.2 kΩ
NC
18 kΩ
NC
39 kΩ
VRST/VOUT (tgt.
value)
VRST min. VRSTtyp. VRSTmax. Unit
93%
4.557
4.650
4743
80%
3920
4000
4080
87%
4263
4350
4437
NC
96%
4704
4800
4896
NC
0Ω
93%
4557
4650
4743
NC
8.2 kΩ
80%
3920
4000
4080
NC
18 kΩ
87%
4263
4350
4437
NC
39 kΩ
96%
4704
4800
4896
LCM
LNM
V
TJ = -40 to 135 °C, VIN = 12 V unless otherwise specified.
Table 9. LNM/ LCM selection (A6986H)
Symbol RVCC(E24 1%) RGND(E24 1%) Operating mode
VRST
DS12861 - Rev 1
0Ω
NC
8.2 kΩ ±1%
NC
18 kΩ ±1%
NC
39 kΩ ±1%
VRST/VOUT (tgt.
value)
VRST min. VRSTtyp. VRSTmax. Unit
93%
0.779
0.791
0.802
80%
0.670
0.680
0.690
87%
0.728
0.740
0.751
NC
96%
0.804
0.816
0.828
NC
0Ω
93%
0.779
0.791
0.802
NC
8.2 kΩ ±1%
80%
0.670
0.680
0.690
NC
18 kΩ ±1%
87%
0.728
0.740
0.751
NC
39 kΩ ±1%
96%
0.804
0.816
0.828
LCM
LNM
V
page 10/70
A6986H
Parameters over the temperature range
4
Parameters over the temperature range
The 100% of the population in the production flow is tested at three different ambient temperatures (-40 °C, +25
°C, +135 °C) to guarantee the datasheet parameters inside the junction temperature range (-40 °C, +135 °C).
The device operation is guaranteed when the junction temperature is inside the (-40 °C, +150 °C) temperature
range. The designer can estimate the silicon temperature increase respect to the ambient temperature evaluating
the internal power losses generated during the device operation.
However the embedded thermal protection disables the switching activity to protect the device in case the junction
temperature reaches the TSHTDWN(+165 °C typ.) temperature.
All the datasheet parameters can be guaranteed to a maximum junction temperature of +135 °C to avoid
triggering the thermal shutdown protection during the testing phase because of self-heating.
DS12861 - Rev 1
page 11/70
A6986H
Functional description
5
Functional description
The A6986H device is based on a “peak current mode”, constant frequency control. As a consequence, the
intersection between the error amplifier output and the sensed inductor current generates the PWM control signal
to drive the power switch.
The device features LNM (low noise mode) that is forced PWM control, or LCM (low consumption mode) to
increase the efficiency at light-load.
The main internal blocks shown in the block diagram in Figure 3. Internal block diagram are:
•
Embedded power elements. Thanks to the P-channel MOSFET as high-side switch the device features lowdropout operation
•
A fully integrated sawtooth oscillator with adjustable frequency
•
A transconductance error amplifier
•
An internal feedback divider GDIV INT
•
•
•
•
•
•
•
•
•
•
•
The high-side current sense amplifier to sense the inductor current
A “Pulse Width Modulator” (PWM) comparator and the driving circuitry of the embedded power elements
The soft-start blocks to ramp the error amplifier reference voltage and so decreases the inrush current at
power-up. The SS/INH pin inhibits the device when driven low
The switchover capability of the internal regulator to supply a portion of the quiescent current when the VBIAS
pin is connected to an external output voltage
The synchronization circuitry to manage master / slave operation and the synchronization to an external
clock
The current limitation circuit to implement the constant current protection, sensing pulse by pulse high-side /
low-side switch current. In case of heavy short-circuit the current protection is fold back to decrease the
stress of the external components
A circuit to implement the thermal protection function
The OVP circuitry to discharge the output capacitor in case of overvoltage event
MLF pin strapping sets the LNM/LCM mode and the thresholds of the RST comparator
FSW pinstrapping sets the switching frequency
The RST open collector output
Figure 3. Internal block diagram
COMP SYNC FSW
VIN
SS/INH
SS/INH
0
VOUT
GDIV INT
TSS
PEAK
CL
E/A
OVP
POWER
PMOS
SENSE
PMOS
OSCILLATOR
VREF
LOOP
LOOP
CONTROL
CONTROL
SLOPE
+
-
GND
LX
DRIVER
DRIVER
+
DELAY
L.N. / L.C.
RST TH.
SENSE Vcc
NMOS
ZERO
CROSSING
POWER
NMOS
GND
RST
VALLEY
CL
DELAY
DS12861 - Rev 1
MLF
GND
page 12/70
A6986H
Power supply and voltage reference
5.1
Power supply and voltage reference
The internal regulator block consists of a start-up circuit, the voltage pre-regulator that provides current to all the
blocks and the bandgap voltage reference. The starter supplies the start-up current when the input voltage goes
high and the device is enabled (SS/INH pin over the inhibits threshold).
The pre-regulator block supplies the bandgap cell and the rest of the circuitry with a regulated voltage that has a
very low supply voltage noise sensitivity.
Switchover feature
The switchover scheme of the pre-regulator block features to derive the main contribution of the supply current for
the internal circuitry from an external voltage (3 V < VBIAS VSS_END
(9)
RUP and RDWN are selected to guarantee:
The time to ramp the internal voltage reference can be calculated as follows
VSS_FINAL − VSS START
TSS = CSS ⋅ RSS_EQ ⋅ In(
)
VSS_FINAL − VSS END
(10)
that is the equivalent soft-start time to ramp the output voltage.
Figure 8. External soft-start network VSTEP driven shows the soft-start phase with the following component
selection: RUP = 180 kΩ, RDWN = 33 kΩ, CSS = 200 nF, the 1N4148 is a small signal diode and VSTEP = 13 V.
DS12861 - Rev 1
page 16/70
A6986H
Soft-start and inhibit
Figure 8. External soft-start network VSTEP driven
The circuit in Figure 7. Enable the device with external voltage step introduces a time delay between VSTEP and
the switching activity that can be calculated as:
VSS_FINAL
TSS = CSS ⋅ RSS_EQ ⋅ In(
)
VSS_FINAL − VSS START
(11)
Figure 9. External soft-start after UVLO or thermal shutdown shows how the device discharges the soft-start
capacitor after an UVLO or thermal shutdown event in order to restart the switching activity ramping the error
amplifier reference voltage.
Figure 9. External soft-start after UVLO or thermal shutdown
DS12861 - Rev 1
page 17/70
A6986H
Soft-start and inhibit
5.3.1
Ratiometric startup
The ratiometric start-up is implemented sharing the same soft-start capacitor for a set of the A6986H devices
Figure 10. Ratiometric startup
V
VOUT3
VOUT2
VOUT1
t
As a consequence all the internal current generators charge in parallel the external capacitor. The capacitor value
is dimensioned accordingly, as per equation below:
CSS = nA6986H ⋅ SSGAIN ⋅
ISSCH ⋅ TSS
4μA ⋅ TSS
= nA6986H ⋅ 3 ⋅
VFB
0.85V
(12)
where nA6986H represents the number of devices connected in parallel.
For better tracking of the different output voltages the synchronization of the set of regulators is suggested.
Figure 11. Ratiometric startup operation
DS12861 - Rev 1
page 18/70
A6986H
Error amplifier
5.3.2
Output voltage sequencing
The A6986H device implements sequencing connecting the RST pin of the master device to the SS/INH of the
slave. The slave is inhibited as long as the master output voltage is outside regulation so implementing the
sequencing, see Figure 12. Output voltage sequencing.
Figure 12. Output voltage sequencing
V
VOUT3
VOUT2
VOUT1
t
tDELAY1
tDELAY2
tDELAY3
High flexibility is achieved thanks to the programmable RST thresholds (Table 7. LNM/ LCM selection
(A6986H3V3) and Table 8. LNM/ LCM selection (A6986H5V)) and programmable delay time. To minimize the
component count the DELAY pin capacitor can be also omitted so the pin works as a normal Power Good.
5.4
Error amplifier
The voltage error amplifier is the core of the loop regulation. It is a transconductance operational amplifier whose
non inverting input is connected to the internal voltage reference (0.85 V), while the inverting input (FB) is
connected to the external divider or directly to the output voltage.
Table 10. Uncompensated error amplifier characteristics
Description
Value
Transconductance
155 µS
Low frequency gain
100 dB
The error amplifier output is compared with the inductor current sense information to perform PWM control. The
error amplifier also determines the burst operation at light-load when the LCM is active.
5.5
Output voltage line regulation
The regulator features an enhanced line regulation thanks to the peak current mode architecture. Figure 13. VOUT
= 3.3 V line regulation shows negligible output voltage variation (normalized to the value measured at VIN = 12 V)
over the entire input voltage range for the A6986H with VOUT = 3.3V.
DS12861 - Rev 1
page 19/70
A6986H
Output voltage load regulation
Figure 13. VOUT = 3.3 V line regulation
0.10%
ΔVOUT[V]
0.05%
0.00%
-0.05%
-0.10%
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
VIN [V]
5.6
Output voltage load regulation
Figure 14. VOUT = 3.3 V load regulation shows negligible output voltage variation (normalized to the value
measured at IOUT = 0 A) over the entire output current range for the A6986H with VOUT = 3.3 V, measured on the
A6986H evaluation board (see Section 8 Application board).
Figure 14. VOUT = 3.3 V load regulation
0.10%
ΔVOUT[%]
0.05%
0.00%
-0.05%
-0.10%
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IOUT[A]
DS12861 - Rev 1
page 20/70
A6986H
High-side switch resistance vs. input voltage
5.7
High-side switch resistance vs. input voltage
Figure 15. Normalized RDS(on),HS variation shows the high-side switch RDS(on) variation over the entire input
voltage operating range normalized at the value measured at VIN = 12 V (see Table 5. Electrical characteristics).
Figure 15. Normalized RDS(on),HS variation
RDS(on),HS @ IOUT =1A (normalized @ V IN =12V)
RDSON,HS Deviation [%]
3%
2%
1%
0%
-1%
-2%
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
VIN [V]
5.8
Light-load operation
The MLF pinstrapping during the power-up phase determines the light-load operation (refer to Table 7. LNM/ LCM
selection (A6986H3V3) and Table 8. LNM/ LCM selection (A6986H5V)).
5.8.1
Low noise mode (LNM)
The low noise mode implements a forced PWM operation over the different loading conditions. The LNM features
a constant switching frequency to minimize the noise in the final application and a constant voltage ripple at fixed
VIN. The regulator in steady loading condition never skips pulses and it operates in continuous conduction mode
(CCM) over the different loading conditions, thus making this operation mode ideal for noise sensitive
applications.
DS12861 - Rev 1
page 21/70
A6986H
Light-load operation
Figure 16. Low noise mode operation
Typical applications for the LNM operation are car audio and sensors.
5.8.2
Low consumption mode (LCM)
The low consumption mode maximizes the efficiency at light-load. The regulator prevents the switching activity
whenever the switch peak current request is lower than the ISKIP threshold. As a consequence the A6986H device
works in bursts and it minimizes the quiescent current request in the meantime between the switching operation.
In LCM operation, the pin SYNCH/ISKIP level dynamically defines the ISKIP current threshold (see
Table 5. Electrical characteristics) as shown in Table 11. ISKIP programmable current threshold.
Table 11. ISKIP programmable current threshold
SYNCH / ISKIP (pin 4)
ISKIP current threshold
Low
ISKIPH = 0.6 A typical
High
ISKIPL = 0.2 A typical
The ISKIP programmability helps to optimize the performance in terms of the output voltage ripple or efficiency at
the light-load, that are parameters which disagree each other by definition. A lower skip current level minimizes
the voltage ripple but increases the switching activity (time between bursts gets closer) since less energy per
burst is transferred to the output voltage at the given load. On the other side, a higher skip level reduces the
switching activity and improves the efficiency at the light-load but worsen the voltage ripple.
No difference in terms of the voltage ripple and conversion efficiency for the medium and high load current level,
that is when the device operates in the discontinuous or continuous mode (DCM vs. CCM).
The A6986H allows changing the skip current threshold level while the device is switching in order to adapt the
pulse skipping operation to the loading condition. The time needed to detect and implement this transition is
negligible with respect to the switching period.
When the A6986H is configured in the low consumption mode, the SYNCH/ISKIP pin operates as a logic gate
input pin with an internal pull-down (4.5 µA typ.) guaranteeing the ISKIPH operation when leaving the pin floating.
DS12861 - Rev 1
page 22/70
A6986H
Light-load operation
Table 12. SYNCH/ISKIP pin voltage thresholds and driving current reports the VSYNCH/ISKIP thresholds and the
minimum current needed to drive the pin.
Table 12. SYNCH/ISKIP pin voltage thresholds and driving current
Parameter
Value
VSKIP_TH_L_MAX
0.65 V
VSKIP_TH_H_MIN
1.6 V
ISYNCH/ISKIP_DRIVING_MIN
± 10 µA
Figure 17. A6986H skip current level transition at ILOAD = 150 mA with L = 10 µH shows a skip current threshold
transition at ILOAD = 150 mA measured on the A6986H - VOUT = 3.3 V with fsw = 500 kHz and L = 10 µH:
•
•
When V(SYNCH/ISKIP) < VSKIP_TH_L_MAX, the A6986H operates in the pulse skipping mode minimizing
current consumption
When V(SYNCH/ISKIP) > VSKIP_TH_H_MIN, the A6986H operates in the continuous conduction mode
minimizing the output voltage ripple
Figure 17. A6986H skip current level transition at ILOAD = 150 mA with L = 10 µH
Figure 18. Light-load efficiency comparison at different ISKIP - linear scale and Figure 19. Light-load efficiency
comparison at different ISKIP - log scale report the efficiency measurements to highlight the ISKIPH and ISKIPL
efficiency gap at the light-load also in comparison with the LNM operation. The same efficiency at the medium /
high load is confirmed at different ISKIP levels.
DS12861 - Rev 1
page 23/70
A6986H
Light-load operation
Figure 18. Light-load efficiency comparison at different ISKIP - linear scale
VIN=13.5 V; VOUT=3.3V; fsw=500kH z
90
85
EFFICIENCY [%]
80
75
LCM ISKIPH=600mA
70
LCM ISKIPL=200mA
65
LNM
LNM - SWO
LCM_ISKIPH - SWO
60
LCM_ISKIPL - SWO
55
50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
ILOAD [A]
Figure 19. Light-load efficiency comparison at different ISKIP - log scale
VIN=13.5V; VOUT=3.3 V; fsw=5 00kH z
100
90
EFFICIENCY [%]
80
70
LCM ISKIPH=600mA
60
LCM ISKIPL=200mA
50
LNM
40
30
LNM - SWO
20
LCM_ISKIPH - SWO
10
LCM_ISKIPL - SWO
0
0.001
0.1
0.01
ILOAD [A]
Figure 20. LCM operation with ISKIPH = 600 mA typ. at zero load and Figure 21. LCM operation with ISKIPL =
200 mA typ. at zero load show the LCM operation at the different ISKIP level.
Figure 20. LCM operation with ISKIPH = 600 mA typ. at zero load shows the ISKIPH = 600 mA typ. and so 50 mV
output voltage ripple.
Figure 21. LCM operation with ISKIPL = 200 mA typ. at zero load shows the ISKIPL = 200 mA typ. and so less
than 20 mV output voltage ripple.
DS12861 - Rev 1
page 24/70
A6986H
Light-load operation
Figure 20. LCM operation with ISKIPH = 600 mA typ. at zero load
Figure 21. LCM operation with ISKIPL = 200 mA typ. at zero load
The LCM operation satisfies the requirements of the unswitched car body applications (KL30). These applications
are directly connected to the battery and are operating when the engine is disabled. The typical load when the car
is parked is represented by a CAN transceiver and a microcontroller in sleep mode (total load is around 20 - 30
DS12861 - Rev 1
page 25/70
A6986H
Light-load operation
µA). As soon as the transceiver recognizes a valid word in the bus, it awakes the µC and the rest of the
application.
The typical input current request of the module when the car is parked is 100 µA typ. to prevent the battery
discharge over the parking time. In order to minimize the regulator quiescent current request from the input
voltage, the VBIAS pin can be connected to an external voltage source in the range 3 V < VBIAS < 5.5 V (see
Section 5.1 Power supply and voltage reference).
Given the energy stored in the inductor during a burst, the voltage ripple depends on the capacitor value:
T
∫0 BURST (iL(t) ⋅ dt)
ΔQIL
VOUT RIPPLE =
=
COUT
COUT
(13)
Figure 22. LCM operation over loading condition (part 1)
DS12861 - Rev 1
page 26/70
A6986H
Light-load operation
Figure 23. LCM operation over loading condition (part 2-pulse skipping)
Figure 24. LCM operation over loading condition (part 3-pulse skipping)
DS12861 - Rev 1
page 27/70
A6986H
Light-load operation
Figure 25. LCM operation over loading condition (part 4-CCM)
5.8.3
Quiescent current in LCM with switchover
The current absorbed from the input voltage in the low consumption mode while regulating the output voltage at
the zero output load depends on the input voltage value and the selected skip current level, as shown in
Figure 26. Quiescent current at VOUT = 3.3 V and zero output load and Figure 27. Quiescent current at VOUT = 5
V and zero output load
Figure 26. Quiescent current at VOUT = 3.3 V and zero output load
When VIN is adequately higher than VOUT (see Figure 26. Quiescent current at VOUT = 3.3 V and zero output
load ) the device works in the bursts mode operation, minimizing the power consumption over the entire input
voltage (see Section 5.8.2 Low consumption mode (LCM)).
DS12861 - Rev 1
page 28/70
A6986H
Light-load operation
Figure 27. Quiescent current at VOUT = 5 V and zero output load
A6986H input current with VBIAS =VOUT=5V and ILOAD =0
LCM-500kHz
120
ISKIPH
ISKIPL
IQUIESC_VIN [µA]
100
80
60
40
20
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
VIN [V]
When VIN approaches VOUT (see Figure 27. Quiescent current at VOUT = 5 V and zero output load and zoomed
Figure 28. Quiescent current at VIN while regulating VOUT = 5 V at zero output load) the device increases the
switching activity towards the continuous conduction mode operation for the internal slope contribution effect on
the programmed skip current threshold. As a consequence the quiescent current increases.
When VIN is lower than VOUT (see Figure 28. Quiescent current at VIN while regulating VOUT = 5 V at zero
output load), the device enters in the low-dropout operation with the high-side always switched on. In this
operating condition, all the internal circuit blocks are active and the quiescent current corresponds to what
measured in the low noise mode operation (see IQ OP VIN and IQ OP VBIAS in Table 5. Electrical characteristics
given VFB = GND).
Figure 28. Quiescent current at VIN while regulating VOUT = 5 V at zero output load
A6986H Input Current VBIAS =VOUT =5V and I LOAD =0
LCM -500kHz
16
ISKIPH
ISKIPL
14
I QUIESC_VIN [mA]
12
10
8
6
Drop Out
No SLEEP Mode
4
Pulse Skipping
SLEEP Mode
Continuous
Conduction Mode
2
0
4
4.2
4.4
4.6
4.8
5
5.2
5.4
5.6
5.8
6
VIN [V]
DS12861 - Rev 1
page 29/70
A6986H
Switchover feature
5.9
Switchover feature
The switchover maximizes the efficiency at the light-load that is crucial for LCM applications.
The switchover operation features to derive the main contribution of the supply current for the internal circuitry
from an external voltage (3 V < VBIAS < 5.5 V is typically connected to the regulated output voltage). This helps to
decrease the equivalent quiescent current seen at VIN.
In case the regulator output voltage is not compatible with the VBIAS input voltage range, it is possible to use an
auxiliary voltage source for the switchover operation. The external auxiliary voltage source must always respect
the condition 3 V < VAUX < 5.5 V, and must be derived from the A6986H power supply (VIN - pin 15) for proper
power sequencing of the internal circuits.
5.9.1
LCM
The LCM operation satisfies the high efficiency requirements of the battery powered applications.
In case the VBIAS pin is connected to the regulated output voltage (VOUT), the total current drawn from the input
voltage can be calculated as:
VBIAS
1
IQVIN = IQOPVIN +
⋅
⋅ IQOPVBIAS
ηA6986H VIN
(14)
where IQ OP VIN, IQ OP VBIAS are defined in Table 5. Electrical characteristics and ηA6986H is the efficiency of the
conversion in the working point.
5.9.2
LNM
Eq. (14) is also valid when the device works in LNM and it can increase the efficiency at the medium load since
the regulator always operates in the continuous conduction mode.
5.10
Overcurrent protection
The current protection circuitry features a constant current protection, so the device limits the maximum peak
current (see Table 5. Electrical characteristics) in overcurrent condition.
The A6986H device implements a pulse by pulse current sensing on both power elements (high-side and low-side
switches) for effective current protection over the duty cycle range. The high-side current sensing is called “peak”
the low-side sensing “valley”.
The internal noise generated during the switching activity makes the current sensing circuitry ineffective for a
minimum conduction time of the power element. This time is called “masking time” because the information from
the analog circuitry is masked by the logic to prevent an erroneous detection of the overcurrent event. As a
consequence, the peak current protection is disabled for a masking time after the high-side switch is turned on,
the valley for a masking time after the low-side switch is turned on. In other words, the peak current protection can
be ineffective at extremely low duty cycles, the valley current protection at extremely high duty cycles.
The A6986H device assures an effective overcurrent protection sensing the current flowing in both power
elements. In case one of the two current sensing circuitry is ineffective because of the masking time, the device is
protected sensing the current on the opposite switch. Thus, the combination of the “peak” and “valley” current
limits assures the effectiveness of the overcurrent protection even in extreme duty cycle conditions.
The valley current threshold is designed higher than the peak to guarantee a proper operation. In case the current
diverges because of the high-side masking time, the low-side power element is turned on until the switch current
level drops below the valley current sense threshold. The low-side operation is able to prevent the high-side turn
on, so the device can skip pulses decreasing the switching frequency.
DS12861 - Rev 1
page 30/70
A6986H
Overcurrent protection
Figure 29. Valley current sense operation in overcurrent condition
Figure 29. Valley current sense operation in overcurrent condition shows the switching frequency reduction during
the valley current sense operation in case of extremely low duty cycle (VIN = 12 V, fSW = 2 MHz short-circuit
condition).
In a worst case scenario (like Figure 29. Valley current sense operation in overcurrent condition) of the
overcurrent protection the switch current is limited to:
IMAX = IVALLEYTH +
VIN − VOUT
⋅ TMASKHS
L
(15)
where IVALLEY_TH is the current threshold of the valley sensing circuitry (see Table 5. Electrical characteristics)
and TMASK_HS is the masking time of the high-side switch 100 ns typ.).
In most of the overcurrent conditions the conduction time of the high-side switch is higher than the masking time
and so the peak current protection limits the switch current.
IMAX = IPEAK_TH
DS12861 - Rev 1
(16)
page 31/70
A6986H
OCP and switchover feature
Figure 30. Peak current sense operation in overcurrent condition
The DC current flowing in the load in overcurrent condition is:
5.11
IDCOC(VOUT) = IMAX −
OCP and switchover feature
IRIPPLE(VOUT)
VIN − VOUT
= IMAX − (
⋅ TON)
2
2⋅L
(17)
Output capacitor discharging the current flowing to ground during heavy short-circuit events is only limited by
parasitic elements like the output capacitor ESR and short-circuit impedance.
Due to parasitic inductance of the short-circuit impedance, negative output voltage oscillations can be generated
with huge discharging current levels (see Figure 12. Output voltage sequencing).
DS12861 - Rev 1
page 32/70
A6986H
OCP and switchover feature
Figure 31. Output voltage oscillations during heavy short-circuit
Figure 32. Zoomed waveforms
DS12861 - Rev 1
page 33/70
A6986H
Overvoltage protection
The VBIAS pin absolute maximum ratings (see Table 2. Absolute maximum ratings) must be satisfied over the
different dynamic conditions.
If the VBIAS is connected to GND there are no issues (see Figure 31. Output voltage oscillations during heavy
short-circuit and Figure 32. Zoomed waveforms).
A small resistor value (few ohms) in series with the VBIAS can help to limit the pin negative voltage (see
Figure 33. VBIAS in heavy short-circuit event) during heavy short-circuit events if it is connected to the regulated
output voltage.
Figure 33. VBIAS in heavy short-circuit event
5.12
Overvoltage protection
The overvoltage protection monitors the VOUT pin and enables the low-side MOSFET to discharge the output
capacitor if the output voltage is 20% over the nominal value.
This is a second level protection and should never be triggered in normal operating conditions if the system is
properly dimensioned. In other words, the selection of the external power components and the dynamic
performance determined by the compensation network should guarantee an output voltage regulation within the
overvoltage threshold even during the worst case scenario in term of load transitions.
The protection is reliable and also able to operate even during normal load transitions for a system whose
dynamic performance is not in line with the load dynamic request. As a consequence the output voltage regulation
would be affected.
Figure 34. Overvoltage operation shows the overvoltage operation during a negative steep load transient for a
system configured in low consumption mode and designed with a not optimized compensation network. This can
be considered as an example for a system with dynamic performance not in line with the load request.
The A6986H device implements a 1 A typ. negative current limitation to limit the maximum reversed switch
current during the overvoltage operation.
Moreover, the overvoltage protection also activates the internal pull-down on RST pin. Once OVP is deactivated,
the A6986H releases the RST pin after the delay programmed by DELAY capacitor (6 ms in
Figure 34. Overvoltage operation).
DS12861 - Rev 1
page 34/70
A6986H
Thermal shutdown
Figure 34. Overvoltage operation
5.13
Thermal shutdown
The shutdown block disables the switching activity if the junction temperature is higher than a fixed internal
threshold (165 °C typical). The thermal sensing element is close to the power elements, ensuring fast and
accurate temperature detection. A hysteresis of approximately 30 °C prevents the device from turning ON and
OFF continuously. When the thermal protection runs away a new soft-start cycle will take place.
DS12861 - Rev 1
page 35/70
A6986H
Closing the loop
6
Closing the loop
Figure 35. Block diagram of the loop
6.1
GCO(s) control to output transfer function
The accurate control to output transfer function for a buck peak current mode converter can be written as:
S
ωZ
GCO(s) = RLOAD ⋅ gCS ⋅
⋅
⋅ FH(s)
RLOAD ⋅ TSW
S
⋅ [mC ⋅ (1 − D) − 0.5] 1 + ω
1+
L
p
1
1+
(18)
where RLOAD represents the load resistance, gCS the equivalent sensing transconductance of the current sense
circuitry, wp the single pole introduced by the power stage and wz the zero given by the ESR of the output
capacitor.
FH(s) accounts the sampling effect performed by the PWM comparator on the output of the error amplifier that
introduces a double pole at one half of the switching frequency.
1
ωZ =
ESR ⋅ COUT
where:
mc ⋅ (1 − D) − 0.5
1
ωp =
+
RLOAD ⋅ COUT
L ⋅ COUT ⋅ fSW
Se
mC = 1 +
Sn
Se = VPP ⋅ gCS ⋅ fSW
(19)
(20)
(21)
VIN − VOUT
Sn =
L
Sn represents the on time slope of the sensed inductor current, Se the on time slope of the external ramp (VPP
peak-to-peak amplitude) that implements the slope compensation to avoid sub-harmonic oscillations at duty cycle
over 50%.
Se can be calculated from the parameter VPP × gCS given in Table 5. Electrical characteristics .
DS12861 - Rev 1
page 36/70
A6986H
Error amplifier compensation network
The sampling effect contribution FH(s) is:
FH(s) =
where:
6.2
1+
1
s
ωn ⋅ Qp +
(22)
S2
2
ωn
ωn = π ⋅ fSW
1
Qp =
π ⋅ [mc ⋅ (1 − D) − 0.5]
(23)
Error amplifier compensation network
The typical compensation network required to stabilize the system is shown in Figure 36. Transconductance
embedded error amplifier:
Figure 36. Transconductance embedded error amplifier
RC and CC introduce a pole and a zero in the open loop gain. CP does not significantly affect system stability but it
is useful to reduce the noise at the output of the error amplifier.
The transfer function of the error amplifier and its compensation network is:
AV0 ⋅ (1 + s ⋅ RC ⋅ Cc)
A0(s) =
2
s ⋅ R0 ⋅ (C0 + Cp) ⋅ RC ⋅ Cc + s ⋅ (R0 ⋅ Cc + R0 ⋅ (C0 + Cp) + Rc ⋅ Cc) + 1
(24)
Where Avo = Gm · Ro
The poles of this transfer function are (if Cc >> C0 + CP):
1
fPLF =
2 ⋅ π ⋅ R0 ⋅ Cc
DS12861 - Rev 1
(25)
page 37/70
A6986H
Voltage divider
whereas the zero is defined as:
6.3
1
fPHF =
2 ⋅ π ⋅ R0 ⋅ (C0 + Cp)
(26)
1
fZ =
2 ⋅ π ⋅ Rc ⋅ Cc
Voltage divider
(27)
The contribution of the internal voltage divider for fixed output voltage devices is:
R2
VFB
0.85
= 0.2575
GDIV(s) =
=
=
R1 + R2
VOUT
3.3
R2
VFB
0.85
= 0.17
GDIV(s) =
=
=
5
R1 + R2
VOUT
A6986H3V
(28)
A698HF5V
while for the adjustable output part number A6986H is:
R2
GDIV(s) =
R1 + R2
A6986H
(29)
A small signal capacitor in parallel to the upper resistor (see Figure 37. Leading network example) of the voltage
divider implements a leading network (fzero < fpole), sometimes necessary to improve the system phase margin:
Figure 37. Leading network example
uC RST
4
VIN
15
2
5
6
3
8
SYNCH
RST
VIN
VBIAS
VCC
FSW
MLF
LX
LX
VOUT
13
14
Cr1
FB
SS/INH
17
16
A6986H
DELAY
EP
1
COMP
SGND PGND
10
11
R1
9
Rc
7
PGND
12
Cp
Cc
R2
signal GND
Power GND
GND
The Laplace transformer of the leading network is:
where
R2
GDIV(s) =
⋅
R1 + R2
(1 + s + R1 ⋅ CR1)
R1 ⋅ R2
(1 + s ⋅
⋅C )
R1 + R2 R1
1
fZ =
2 ⋅ π ⋅ R1 ⋅ CR1
fp =
1
R1 ⋅ R2
2⋅π⋅
⋅C
R1 + R2 R1
(30)
(31)
fZ < fp
DS12861 - Rev 1
page 38/70
A6986H
Total loop gain
6.4
Total loop gain
In summary, the open loop gain can be expressed as:
G(s) = GDIV(s) ⋅ GCO(s) ⋅ A0(s)
(32)
example 1:
VIN = 12 V, VOUT = 3.3 V, ROUT = 1.67 Ω
Selecting the A6986H with VOUT=3.3 V, fSW = 500 kHz, L = 10 µH, COUT = 20 µF and ESR = 3 mΩ, RC = 75 kΩ,
CC = 330 pF, CP = 2.2 pF (please refer to Table 19. A6986H 3V3 demonstration board BOM), the gain and phase
bode diagrams are plotted respectively in Figure 38. Module plot and Figure 39. Phase plot.
Figure 38. Module plot
BW = 55 kHZ
phase margin = 60 °
Figure 39. Phase plot
The blue solid trace represents the transfer function including the sampling effect term (see Eq. (22)), the dotted
blue trace neglects the contribution.
DS12861 - Rev 1
page 39/70
A6986H
Compensation network design
6.5
Compensation network design
The maximum bandwidth of the system can be designed up to fSW/6 up to 150 kHz maximum to guarantee a valid
small signal model.
where:
2 ⋅ π ⋅ BW ⋅ COUT ⋅ VOUT
RC =
0.85V ⋅ gCS ⋅ gm TYP
(33)
ωp
fPOLE =
2⋅π
(34)
ωp is defined by Eq. (20), gCS represents the current sense transconductance (see Table 5. Electrical
characteristics) and gm TYP the error amplifier transconductance.
5
CC =
2 ⋅ π ⋅ RC ⋅ BW
(35)
Example 2:
Considering VIN = 12 V, VOUT = 3.3 V, L = 6.8 µH, COUT = 10 µF, fSW = 500 kHz, IOUT = 1 A.
The maximum system bandwidth is 80 kHz. Assuming to design the compensation network to achieve a system
bandwidth of 70 kHz:
fPOLE = 2.7 kHz
so accordingly with Eq. (33) and Eq. (35):
(36)
VOUT
RLOAD =
= 3.3Ω
IOUT
RC = 48.5kΩ ≈ 47kΩ
CC = 237pF ≈ 270pF
(37)
(38)
(39)
The gain and phase bode diagrams are plotted respectively in Figure 40. Magnitude plot for example 2 and
Figure 41. Phase plot for example 2.
Figure 40. Magnitude plot for example 2
DS12861 - Rev 1
page 40/70
A6986H
Compensation network design
Figure 41. Phase plot for example 2
DS12861 - Rev 1
page 41/70
A6986H
Application notes
7
Application notes
7.1
Output voltage adjustment
The error amplifier reference voltage is 0.85 V typical.
The output voltage is adjusted accordingly as per equation below: (see Figure 42. A6986H application circuit).
R1
VOUT = 0.85 ⋅ (1 +
)
R2
(40)
Cr1 capacitor is sometimes useful to increase the small signal phase margin (please refer to
Section 6.5 Compensation network design).
Figure 42. A6986H application circuit
uC RST
4
VIN
15
2
5
6
3
8
SYNCH
RST
VIN
VBIAS
VCC
FSW
MLF
LX
LX
13
14
VOUT
Cr1
FB
SS/INH
17
16
A6986H
DELAY
EP
1
COMP
SGND PGND
10
11
Rc
7
PGND
12
R1
9
Cp
Cc
R2
signal GND
Power GND
7.2
GND
Switching frequency
A resistor connected to the FSW pin features the selection of the switching frequency. The pinstrapping is
performed at power-up, before the soft-start takes place. The FSW pin is pinstrapped and then driven floating in
order to minimize the quiescent current from VIN. Please refer to Table 6. fSW selection to identify the pull-up /
pull-down resistor value. fSW = 250 kHz / fSW = 500 kHz preferred codifications do not require any external
resistor.
7.3
MLF pin
A resistor connected to the MLF pin features the selection of the between low noise mode / low consumption
mode and the different RST thresholds. The pinstrapping is performed at power-up, before the soft-start takes
place. The FSW pin is pinstrapped and then driven floating in order to minimize the quiescent current from VIN.
Please refer to Table 7. LNM/ LCM selection (A6986H3V3), Table 8. LNM/ LCM selection (A6986H5V), and
Table 9. LNM/ LCM selection (A6986H) to identify the pull-up / pull-down resistor value. (LNM, RST threshold
93%) / (LCM, RST threshold 93%) preferred codifications don't require any external resistor.
7.4
Voltage supervisor
The embedded voltage supervisor (composed of the RST and the DELAY pins) monitors the regulated output
voltage and keeps the RST open collector output in low impedance as long as the VOUT is out of regulation. In
order to ensure a proper reset of digital devices with a valid power supply, the device can delay the RST assertion
with a programmable time.
DS12861 - Rev 1
page 42/70
A6986H
Voltage supervisor
Figure 43. Voltage supervisor operation
The comparator monitoring the FB voltage has four different programmable thresholds (80%, 87%, 93%, 96%
nominal output voltage) for high flexibility (see Section 7.3 MLF pin, Table 7. LNM/ LCM selection (A6986H3V3),
Table 8. LNM/ LCM selection (A6986H5V), and Table 9. LNM/ LCM selection (A6986H)).
When the RST comparator detects the output voltage is in regulation, a 2 mA internal current source starts to
charge an external capacitor to implement a voltage ramp on the DELAY pin. The RST open collector is then
released as soon as VDELAY = 1.234 V (see Figure 43. Voltage supervisor operation). The CDELAY is dimensioned
as follows:
CDELAY =
ISSCH ⋅ TDELAY
2μA ⋅ TDELAY
=
VDELAY
1.234V
(41)
The maximum suggested capacitor value is 270 nF.
The A6986H also activates internal pull-down on RST pin in case overvoltage protection is triggered. As soon as
the output voltage goes below OVP threshold (20% typ.), the 2 µA internal current source starts to charge an
external capacitor to implement a voltage ramp on the DELAY pin. The RST open collector is then released as
soon as VDELAY = 1.234 V(see figure below).
DS12861 - Rev 1
page 43/70
A6986H
Synchronization (LNM)
Figure 44. Voltage supervisor operation during OVP
7.5
Synchronization (LNM)
The synchronization feature helps the hardware designer to prevent beating frequency noise that is an issue
when multiple switching regulators populate the same application board.
7.5.1
Embedded master - slave synchronization
The A6986H synchronization circuitry features the same switching frequency for a set of regulators simply
connecting their SYNCH pin together, so preventing beating noise. The master device provides the
synchronization signal to the others since the SYNCH pin is I/O able to deliver or recognize a frequency signal.
For proper synchronization of multiple regulators, all of them have to be configured with the same switching
frequency (see Table 6. fSW selection), so the same resistor connected at the FSW pin.
In order to minimize the RMS current flowing through the input filter, the A6986H device provides a phase shift of
180° between the master and the SLAVES. If more than two devices are synchronized, all slaves will have a
common 180° phase shift with respect to the master.
Considering two synchronized A6986H which regulate the same output voltage (i.e.: operating with the same duty
cycle), the input filter RMS current is optimized and is calculated as:
IRMS =
IOUT
⋅ 2D ⋅ (1 − 2D)
2
IOUT
⋅ (2D − 1) ⋅ (2 − 2D)
2
ifD < 0.5
(42)
ifD > 0.5
The graphical representation of the input RMS current of the input filter in the case of two devices with 0° phase
shift (synchronized to an external signal) or 180° phase shift (synchronized connecting their SYNCH pins)
regulating the same output voltage is provided in the figure below. To dimension the proper input capacitor please
refer to Section 7.6.1 Input capacitor selection).
DS12861 - Rev 1
page 44/70
A6986H
Synchronization (LNM)
Figure 45. Input RMS current
RMS current normalized (Irms/IOUT)
0.5
0.4
two regulators operating in phase
0.3
two regulators operating out of phase
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
Duty cycle
Figure 46. Two regulators not synchronized shows two not synchronized regulators with unconnected SYNCH
pin.
Figure 46. Two regulators not synchronized
Figure 47. Two regulators synchronized shows the same regulators working synchronized having the SYNCH
pins connected. The MASTER regulator (LX_reg2 trace) delivers the synchronization signal to the SLAVE device
(LX_reg1). The SLAVE regulator works in phase with the synchronization signal, which is out of phase with the
MASTER switching operation.
DS12861 - Rev 1
page 45/70
A6986H
Synchronization (LNM)
Figure 47. Two regulators synchronized
7.5.2
External synchronization signal
Multiple A6986H can be synchronized to an external frequency signal fed to the SYNCH pin. In this case the
regulator set is phased to the reference and all the devices will work with 0° phase shift.
The minimum synchronization pulse width is 100 ns and the frequency range of the synchronization signal is:
•
[275 kHz - 1.4 MHz] if fSW_PROGRAMMED < 500 kHz
•
[475 kHz - 2.2 MHz] if fSW_PROGRAMMED ≥ 500 kHz
(see Figure 48. Synchronization pulse definition).
Figure 48. Synchronization pulse definition
275 kHz < fSYNCHRO < 1.4 MHz
if
fSW_PROGRAMMED < 500 kHz typ
475 kHz < fSYNCHRO < 2.2 MHz
if
fSW_PROGRAMMED ≥ 500 kHz typ
fSYNCHRO
100 nsec. min.
fSYNCHRO
100 nsec. min.
Since the internal slope compensation contribution that is required to prevent subharmonic oscillations in peak
current mode architecture depends on the oscillator frequency, it is important to select the same oscillator
frequency for all regulators (all of them operate as SLAVE) as close as possible to the frequency of the reference
signal (please refer to Table 6. fSW selection). As a consequence all the regulators have the same resistor value
connected to the FSW pin, so the slope compensation is optimized accordingly with the frequency of the
synchronization signal. The slope compensation contribution is latched at power-up and so fixed during the device
operation.
DS12861 - Rev 1
page 46/70
A6986H
Synchronization (LNM)
The A6986H normally operates in the MASTER mode, driving the SYNCH line at the selected oscillator frequency
as shown in Figure 49. A6986H synchronization driving capability and Figure 46. Two regulators not
synchronized.
In the SLAVE mode the A6986H sets the internal oscillator at 250 kHz typ. (see Table 6. fSW selection) and drives
the line accordingly.
Figure 49. A6986H synchronization driving capability
In order to safely guarantee that each regulator recognizes itself in SLAVE mode when synchronized, the external
master must drive the SYNCH pin with a clock signal frequency higher than the maximum oscillator spread of the
selected line in Table 6. fSW selectionfor at least 10 internal clock cycles.
Once recognized as SLAVE the synchronization range is:
•
275 - 1.4 MHz if fSW < 500 kHz
•
475 kHz - 2.2 MHz if fSW >=500 kHz
example 1: selecting RFSW = 0 Ω to VCC
Table 13. Example of oscillator frequency selection
Symbol
RVCC (E24 series)
RGND (E24 series)
fSW min.
fSW typ.
fSW max.
fSW
NC
0Ω
225
250
275
the device enters in slave mode after 10 pulses at frequency higher than 275 kHz and so it is able to synchronize
to a clock signal in the range 275 kHz - 1.4 MHz (see Figure 48. Synchronization pulse definition).
Example 2: selecting RFSW = 0 Ω to GND
Table 14. Example of oscillator frequency selection (2)
DS12861 - Rev 1
Symbol
RVCC (E24 series)
RGND (E24 series)
fSW min.
fSW typ.
fSW max.
fSW
NC
0Ω
450
500
550
page 47/70
A6986H
Synchronization (LNM)
The device enters in slave mode after 10 pulses at frequency higher than 550 kHz and so it is able to synchronize
to a clock signal in the range 475 kHz - 2.2 MHz (see Figure 48. Synchronization pulse definition).
As anticipated above, in SLAVE mode the internal oscillator operates at 250 kHz typ. but the slope compensation
is dimensioned accordingly with FSW resistors so it is important to limit the switching operation around a working
point close to the selected oscillator frequency (FSW resistor).
As a consequence, to guarantee the full output current capability and to prevent the subharmonic oscillations, the
MASTER may limit the driving frequency range within ± 5% of the selected frequency.
A wider frequency range may generate subharmonic oscillation for duty > 50% or limit the peak current capability
(see IPK parameter in Table 5. Electrical characteristics) since the internal slope compensation signal may be
saturated.
The device keeps operating in slave mode as far as the master is able to drive the SYNCH pin faster than 275
kHz, otherwise the A6986H goes back into MASTER mode at the programmed RFSW oscillator frequency after
successfully driving one pulse 250 kHz typ. (see Figure 50. Slave-to-master mode transition) in the SYNCH line.
Figure 50. Slave-to-master mode transition
The external master can force a latched SLAVE mode driving the SYNCH pin low at power-up, before the softstart begins the switching activity. So the oscillator frequency is 250 kHz typ. fixed until a new UVLO event is
triggered regardless FSW resistor value, that otherwise counts to design the slope compensation. The same
considerations above are also valid.
The master driving capability must be able to provide the proper signal levels at the SYNCH pin (see
Table 5. Electrical characteristics):
•
Low level < VSYN THL = 0.7 V sinking 5 mA
•
DS12861 - Rev 1
High level > VSYN THH = 1.2 V sourcing 0.7 mA
page 48/70
A6986H
Design of the power components
Figure 51. Master driving capability to synchronize the A6986H
7.6
Design of the power components
7.6.1
Input capacitor selection
The input capacitor voltage rating must be higher than the maximum input operating voltage of the application.
During the switching activity a pulsed current flows into the input capacitor and so its RMS current capability must
be selected accordingly with the application conditions. Internal losses of the input filter depends on the ESR
value so usually low ESR capacitors (like multilayer ceramic capacitors) have higher RMS current capability. On
the other hand, given the RMS current value, lower ESR input filter has lower losses and so contributes to higher
conversion efficiency.
The maximum RMS input current flowing through the capacitor can be calculated as:
D D
IRMS = IOUT ⋅ (1 − ) ⋅
η
η
(43)
Where IOUT is the maximum DC output current, D is the duty cycles, ƞ is the efficiency. This function has a
maximum at D = 0.5 and, considering h = 1, it is equal to IOUT/2.
In a specific application the range of possible duty cycles has to be considered in order to find out the maximum
RMS input current. The maximum and minimum duty cycles can be calculated as:
VOUT + ΔVLOWSIDE
DMAX =
VINMIN + ΔVLOWSIDE − VINMIN + ΔVHIGHSIDE
(44)
VOUT + ΔVLOWSIDE
DMIN =
VINMAX + ΔVLOWSIDE − VINMIN + ΔVHIGHSIDE
(45)
Where DVHIGH_SIDE and DVLOW_SIDE are the voltage drops across the embedded switches. The peak-to-peak
voltage across the input filter can be calculated as follows:
IOUT
D D
CIN =
⋅ (1 − ) ⋅ + ESR ⋅ (IOUT + ΔIL)
VPP ⋅ fSW
η
η
(46)
In case of negligible ESR (MLCC capacitor) the equation of CIN as a function of the target VPP can be written as
follows:
IOUT
D D
CIN =
⋅ (1 − ) ⋅
VPP ⋅ fSW
η
η
(47)
Considering ƞ=1 this function has its maximum in D = 0.5:
IOUT
CINMIN =
4 ⋅ VPPMAX ⋅ fSW
(48)
Typically CIN is dimensioned to keep the maximum peak-peak voltage across the input filter in the order of 5%
VIN_MAX.
DS12861 - Rev 1
page 49/70
A6986H
Design of the power components
Table 15. Input capacitors
Manufacturer
TDK
Taiyo Yuden
7.6.2
Series
Size
Cap value (µF)
Rated voltage (V)
C3225X7S1H106M
1210
10
50
C3216X5R1H106M
1206
-
-
UMK325BJ106MM-T
1210
-
-
Inductor selection
The inductor current ripple flowing into the output capacitor determines the output voltage ripple (please refer to
Section 7.6.3 Output capacitor selection). Usually the inductor value is selected in order to keep the current ripple
lower than 20% - 40% of the output current over the input voltage range. The inductance value can be calculated
by equation below:
ΔIL =
VIN − VOUT
VOUT
⋅ TON =
⋅ TOFF
L
L
(49)
Where TON and TOFF are the on and off time of the internal power switch. The maximum current ripple, at fixed
VOUT, is obtained at maximum TOFF that is at minimum duty cycle (see Section 7.6.1 Input capacitor selection to
calculate minimum duty). So fixing ΔIL = 20% to 40% of the maximum output current, the minimum inductance
value can be calculated:
VOUT 1 − DMIN
LMIN =
⋅
ΔILMAX
fSW
(50)
where fSW is the switching frequency 1/(TON + TOFF).
For example for VOUT = 3.3 V, VIN = 12 V, IOUT = 2 A and FSW = 500 kHz the minimum inductance value to have
ΔIL = 30% of IOUT is about 8.2 µH.
The peak current through the inductor is given by:
ΔIL
IL, PK = IOUT +
2
(51)
So if the inductor value decreases, the peak current (that has to be lower than the current limit of the device)
increases. The higher is the inductor value, the higher is the average output current that can be delivered, without
reaching the current limit.
In the table below, some inductor part numbers are listed.
Table 16. Inductors
Manufacturer
Series
Coilcraft
XAL50xx
XAL60xx
7.6.3
Inductor value (µH)
2.2 to 22
Saturation current (A)
6.5 to 2.7
12.5 to 4
Output capacitor selection
The triangular shape current ripple (with zero average value) flowing into the output capacitor gives the output
voltage ripple, that depends on the capacitor value and the equivalent resistive component (ESR). As a
consequence the output capacitor has to be selected in order to have a voltage ripple compliant with the
application requirements.
The voltage ripple equation can be calculated as:
ΔILMAX
ΔVOUT = ESR ⋅ ΔILMAX +
8 ⋅ COUT ⋅ fSW
(52)
Usually the resistive component of the ripple can be neglected if the selected output capacitor is a multi layer
ceramic capacitor (MLCC).
The output capacitor is important also for loop stability: it determines the main pole and the zero due to its ESR.
(See Section 6 Closing the loop to consider its effect in the system stability).
DS12861 - Rev 1
page 50/70
A6986H
Design of the power components
For example with VOUT = 3.3 V, VIN = 12 V, fSW = 500 kHz, ΔIL = 0.6 A, (resulting by the inductor value) and COUT
= 20 µF MLCC :
ΔVOUT
ΔILMAX
1
1
0.6
7.5mV
⋅
)=
= 0.23 %
≅
⋅
=(
VOUT
VOUT COUT ⋅ fSW
3.3 8 ⋅ 20μF ⋅ 500kHz
3.3
(53)
The output capacitor value has a key role to sustain the output voltage during a steep load transient. When the
load transient slew rate exceeds the system bandwidth, the output capacitor provides the current to the load. In
case the final application specifies high slew rate load transient, the system bandwidth must be maximized and
the output capacitor has to sustain the output voltage for time response shorter than the loop response time.
In Table 17. Output capacitors some capacitor series are listed.
Table 17. Output capacitors
Manufacturer
Series
Cap value (μF)
Rated voltage (V)
ESR (mΩ)
GRM32
22 to 100
6.3 to 25