ACS108-6SUF-TR

ACS108-6S Overvoltage protected AC switch (ACS™) Datasheet − production data Features ■ Needs no external protection snubber or varistor ■ Enables equipment to meet IEC 61000-4-5 ■ Reduces component count by up to 80% ■ Interfaces directly with the micro-controller ■ Common package tab connection supports connection of several alternating current switches (ACS) on the same cooling pad ■ Integrated structure based on A.S.D.® technology ■ Overvoltage protection by crowbar technology ■ High noise immunity - static dV/dt > 500 V/µs Applications COM OUT G SMBflat-3L ACS108-6SUF Figure 1. ■ Alternating current on/off static switching in appliances and industrial control systems ■ Drive of low power high inductive or resistive loads like: – relay, valve, solenoid, – dispenser, door lock – pump, fan, low power motor Functional diagram OUT G Description COM Common drive reference to connect to the mains Output to connect to the load. Gate input to connect to the controller through gate resistor COM OUT G The ACS108-6S belongs to the AC line switch family. This high performance switch can control a load of up to 0.8 A. The ACS108-6S switch includes an overvoltage crowbar structure to absorb the overvoltage energy, and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin. Table 1. Device summary Symbol Value Unit IT(RMS) 0.8 A VDRM/VRRM 600 V IGT 10 mA ®: A.S.D. is a registered trademark of STMicroelectonics TM: ACS is a trademark of STMicroelectronics June 2012 This is information on a product in full production. Doc ID 11962 Rev 4 1/12 www.st.com 12 Characteristics 1 ACS108-6S Characteristics Table 2. Absolute maximum ratings (Tamb = 25 °C, unless otherwise specified) Symbol IT(RMS) Parameter On-state rms current (full sine wave) Value Unit Tamb = 62 °C 0.45 A Ttab = 113 °C 0.8 A F = 60 Hz Non repetitive surge peak on-state current (full cycle sine wave, Tj initial = 25 °C) F = 50 Hz t = 16.7 ms 7.6 t = 20 ms 7.3 I²t Value for fusing tp = 10 ms 0.38 A2 s dI/dt Critical rate of rise of on-state current F = 120 Hz IG = 2xIGT, tr ≤ 100 ns Tj = 125 °C 100 A/µs VPP Non repetitive line peak mains voltage(1) Tj = 25 °C 2 kV IGM Peak gate current Tj = 125 °C 1 A VGM Peak positive gate voltage Tj = 125 °C 10 V Average gate power dissipation Tj = 125 °C 0.1 W -40 to +150 -30 to +125 °C ITSM I2t PG(AV) Tstg Tj tp = 20 µs A Storage junction temperature range Operating junction temperature range 1. according to test described by IEC 61000-4-5 standard and Figure 19 Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol IGT(1) VGT Test conditions VOUT = 12 V, RL = 33 Ω Quadrant Unit II - III Max. 10 mA II - III Max. 1 V II - III Min. 0.15 V VGD VOUT = VDRM, RL =3.3 kΩ, Tj = 125 °C IH (2) IOUT = 100 mA Max. 25 mA IL(2) IG = 1.2 x IGT Max. 30 mA Min. 500 V/µs Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125 °C Min. 0.3 ICL = 0.1 mA, tp = 1 ms, Tj = 125 °C Min. 650 dV/dt(2) VOUT = 67% VDRM, gate open, Tj = 125 °C (dI/dt)c(2 ) VCL 1. Minimum IGT is guaranteed at 10% of IGT max 2. For both polarities of OUT referenced to COM 2/12 Value Doc ID 11962 Rev 4 A/ms V ACS108-6S Characteristics Table 4. Static electrical characteristics Symbol VTM (1) VTO (1) RD (1) IDRM IRRM Test conditions Value Unit ITM = 1.1 A, tp = 500 µs Tj = 25 °C Max. 1.3 V Threshold voltage Tj = 125 °C Max. 0.90 V Tj = 125 °C Max. 300 mΩ 2 µA 0.2 mA Tj = 25 °C VOUT = 600 V Max. Tj = 125 °C 1. For both polarities of OUT referenced to COM Table 5. Thermal resistance Symbol Parameter Rth (j-t) Junction to tab (AC) Rth (j-a) Junction to ambient S = 5 cm² Doc ID 11962 Rev 4 Value Unit Max. 14 °C/W Max. 75 3/12 Characteristics Figure 2. 0.9 ACS108-6S Maximum power dissipation versus on-state rms current (full cycle) Figure 3. P(W) 1.00 180° 0.8 On-state rms current versus tab temperature (full cycle) IT(RMS)(A) 0.90 0.80 0.7 0.70 0.6 0.60 0.5 0.50 0.4 0.40 0.3 0.30 0.2 0.20 0.1 0.10 IT(RMS)(A) 0.0 0.0 0.1 Figure 4. 1.0 TC(°C) 0.00 0.2 0.3 0.4 0.5 0.6 0.7 0.8 On-state rms current versus ambient temperature (free air convection) 0 25 Figure 5. IT(RMS)(A) 1.E+00 50 75 100 125 Relative variation of thermal impedance junction to ambient versus pulse duration K = [Zth(j-a)/Rth(j-a)] 0.9 0.8 0.7 0.6 1.E-01 0.5 0.4 0.3 0.2 0.1 0.0 Ta(°C) 0 25 Figure 6. 2.0 50 75 100 125 Relative variation of, holding and latching current versus junction temperature 1.8 1.6 1.4 1.2 1.0 0.8 0.4 IH IL 0.2 0.0 -40 -30 -20 -10 0 4/12 Figure 7. tp(s) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Releative variation of IGT and VGT versus junction temperature IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C] IH, IL[Tj] / IH, IL[Tj = 25 °C] 0.6 1.E-02 1.E-03 Tj(°C) 2.8 2.6 2.4 2.2 IGT 2.0 1.8 1.6 1.4 1.2 VGT 1.0 0.8 0.6 0.4 0.2 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Doc ID 11962 Rev 4 Tj(°C) 10 20 30 40 50 60 70 80 90 100 110 120 130 ACS108-6S Figure 8. 10 Characteristics Non repetitive surge peak on-state Figure 9. current versus number of cycles ITSM(A) Non repetitive surge peak on-state current for a sinusoidal pulse, and corresponding value of I²t 2 100.0 9 ITSM(A), I t (A2s) Tj initial = 25 °C 8 t = 20 ms Non repetitive Tj initial = 25 °C 7 ITSM One cycle 10.0 6 5 pulse with width tp