ACS108-8TN-TR

ACS108-8TN Overvoltage protected AC switch (ACSTM) Datasheet - production data Description The ACS108-8TN belongs to the AC switch range (built with A.S.D.® technology). This high performance switch can control a load of up to 0.8 A. CO M The ACS108-8TN switch includes an overvoltage crowbar structure to absorb the inductive turn-off energy, and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin. G CO M OU T SOT-223 Figure 1: Functional diagram OUT Features     Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology High noise immunity against static dV/dt and IEC 61000-4-4 burst Needs no external protection snubber or varistor Interfaces directly with the microcontroller ECOPACK®2 and RoHS compliant component G COM OUT G COM Common drive reference to connect to the mains Output to connect to the load. Gate input to connect to the controller through gate resistor Applications   Alternating current on/off static switching in appliances and industrial control systems Driving low power high inductive or resistive loads like:  Relay, valve, solenoid, dispenser  Pump, fan, low power motor, door lock  lamp June 2016 Table 1: Device summary Symbol IT(RMS) 0.8 A VDRM/VRRM 800 V IGT 5 mA DocID029064 Rev 1 This is information on a product in full production. Value 1/14 www.st.com Characteristics 1 ACS108-8TN Characteristics Table 2: Absolute ratings (limiting values) Symbol Parameter IT(RMS) RMS on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current tp = 16.7 ms I2t value for fusing tp = 10 ms I2 t VRRM / VDRM Ttab = 104 °C tp = 20 ms Repetitive peak off-state voltage Unit 0.8 A 13.7 Tj initial = 25 °C 13 A Tj = 25 °C 1.1 A2s Tj = 125 °C 800 V f = 120 Hz 100 A/µs dl/dt Critical rate of rise of on-state current Vpp(1) Non repetitive peak pulse line voltage Tj = 25 °C 2 kV IGM Peak gate current Tj = 125 °C 1 A VGM Peak positive gate voltage Tj = 125 °C 10 V Average gate power dissipation Tj = 125 °C 0.1 W Storage junction temperature range -40 to +150 °C Maximum operating junction temperature range -40 to +125 °C PG(AV) Tstg Tj IG = 2 x IGT, tr ≤ 100 ns Value tp = 20 µs Notes: (1)According to test described by IEC 61000-4-5 standard and test per Figure 18 . Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT Test Conditions VGT VGD VOUT = 12 V, RL = 33 Ω VOUT = VDRM, RL = 3.3 kΩ, Tj = 125 °C Value Unit II - III Max. 5 mA II - III Max. 1 V II - III Min. 0.15 V IH IT = 100 mA, gate open Max. 10 mA IL IG = 1.2 x IGT Max. 20 mA dV/dt (dl/dt)c VCL VD = 402 V, gate open, Tj = 125 °C VD = 536 V, gate open, Tj = 125 °C (1)Minimum Max. 600 300 V/µs (dl/dt)c < 15 V/µs, turn-off time ≤ 20 ms, Tj = 125 °C Min. 0.8 A/ms ICL = 1 mA, tp = 1 ms, Tj = 125 °C Min. 850 V Notes: 2/14 Quadrant (1) IGT is guaranteed at 10% of IGT max. DocID029064 Rev 1 ACS108-8TN Characteristics Table 4: Static electrical characteristics Symbol VTM(1) Test conditions Value Unit ITM = 1.1 A, tp = 380 µs Tj = 25 °C Max. 1.3 V Vto Threshold voltage Tj = 125 °C Max. 0.85 V RD Dynamic resistance Tj = 125 °C Max. 350 mΩ IDRM IRRM Tj = 25 °C VOUT = VDRM = VRRM Tj = 125 °C Max. 2 µA 0.2 mA Value Unit Notes: (1)For both polarities Table 5: Thermal resistance Symbol Rth(j-t) Rth(j-a) Parameter Junction to tab (AC) Junction to ambient (Scu = 5 cm2) DocID029064 Rev 1 Max. 25 Typ. 60 °C/W 3/14 Characteristics 1.1 ACS108-8TN Characteristics (curves) Figure 2: Maximum power dissipation versus on-state RMS current Figure 3: On-state RMS current versus tab temperature (full cycle) P(W) 1.0 IT(RMS) (A) 1.0 α = 180 ° α = 180 ° 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 180° I T(RMS)(A) 0.0 TTAB(°C) 0.0 0.0 0.2 0.4 0.6 0.8 Figure 4: On state RMS current versus ambient temperature (free air, full cycle) 1.0 0 25 50 75 100 125 Figure 5: Relative variation of thermal impedance versus pulse duration IT(RMS) (A) 1.00 K = [Zth/Rth] α = 180° Zth(j-a) Zth(j-t) 0.8 0.6 0.10 0.4 0.2 TA (°C) 0.0 0 25 50 tp(s) 75 100 125 Figure 6: Relative variation of holding current IH and latching current IL versus junction temperature 2.5 IH, IL[Tj] / IH, IL[Tj = 25 °C] 0.01 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 7: Relative variation of gate triggering current IGT and gate triggering voltage VGT versus junction temperature IGT, VGT[Tj]/IGT, VGT[Tj = 25 °C] 3.0 IGT Q2 2.5 2.0 IGT Q3 2.0 IL 1.5 1.5 1.0 IH 1.0 VGT Q2-Q3 0.5 0.5 Tj (°C) 0.0 4/14 Tj (°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 -40 DocID029064 Rev 1 -20 0 20 40 60 80 100 120 140 ACS108-8TN Characteristics Figure 8: Surge peak on-state current versus number of cycles Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse versus pulse width ITSM (A) 15 1.E+03 ITSM (A) Tj initial = 25 °C t = 20ms One cycle 10 ITSM 1.E+02 Non repetitive Tj initial = 25 °C Repetitive TTAB = 104 °C 5 1.E+01 Number of cycles tp(ms) 0 1 10 100 1000 Figure 10: On-state characteristics (maximum values) 1.E+00 0.01 0.10 1.00 10.00 Figure 11: Relative variation of critical rate of decrease of main current (dI/dt)c versus junction temperature 15 (dl/dt)c [Tj] / (dl/dt)c [Tj = 125 °C] 10 5 Tj (°C) 0 25 Figure 12: Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c 4 45 55 65 75 85 95 105 115 125 Figure 13: Relative variation of static dV/dt immunity versus junction temperature (typical values) (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c 10 Tj = 125 °C 35 dV/dt [Tj ] / dV/dt [Tj = 125 °C] VD = VR = 536 V 9 8 3 7 6 2 5 4 3 1 2 1 (dV/dt)c (V/µs) Tj (°C) 0 0 0.1 1.0 10.0 100.0 25 DocID029064 Rev 1 50 75 100 125 5/14 Characteristics ACS108-8TN Figure 14: Relative variation of Leakage current versus junction temperature 1.E+00 IDRM/IRRM [Tj; VDRM/VRRM] / IDRM/IRRM[Tj = 125 °C; 800 V] Figure 15: Thermal resistance junction to ambient versus copper surface under tab 120 Rth(j-a)(°C/W) SOT-223 VDRM = VRRM = 800 V 100 80 1.E-01 60 Tj (°C) 1.E-02 25 6/14 50 75 SCu(cm2) 40 100 125 DocID029064 Rev 1 0 1 2 3 4 5 Alternating current mains switch - basic application ACS108-8TN 2 Alternating current mains switch - basic application The ACS108-8TN switch is triggered by a negative gate current flowing from the gate pin G. The switch can be driven directly by the digital controller through a resistor as shown in Figure 16: "Typical application schematic". Thanks to its over-voltage protection and turn-off commutation performance, the ACS108-8TN switch can drive a small power high inductive load with neither varistor nor additional turn-off snubber. Figure 16: Typical application schematic AC Mains OUT Vss Rg G Vdd COM 2.1 Protection against overvoltage: the best choice is ACS In comparison with standard Triacs the ACS108-8TN is overvoltage self-protected, as specified by the new parameter VCL. This feature is useful in two operating conditions: in case of turn-off of very inductive load, and in case of surge voltage that can occur on the electrical network. DocID029064 Rev 1 7/14 Alternating current mains switch - basic application 2.1.1 ACS108-8TN High inductive load switch-off: turn-off over-voltage clamping With high inductive and low rms current loads the rate of decrease of the current is very low. An overvoltage can occur when the gate current is removed and the OUT current is lower than IH. As shown in Figure 17, at the end of the last conduction half-cycle, the load current decreases ①. The load current reaches the holding current level IH ②, and the ACS turns off ③. An inductive load (up to 15 H) reacts as a current generator and an overvoltage is created, which is clamped by the ACS ④. The current flows through the ACS avalanche and decreases linearly to zero. During this time, the voltage across the switch is limited to the clamping voltage VCL. The energy stored in the inductance of the load is dissipated in the clamping section that is designed for this purpose. When the energy has been dissipated, the ACS voltage falls back to the mains voltage value (230 V RMS, 50 Hz) ⑤. Figure 17: Switching off of a high inductive load - typical clamping capability of ACS108-8TN 4 VCL I T 3 1 VT (200 V/div) IT 4 2 VT V CL 1 8/14 3 5 (5 mA/div) 100 µs/div 2 I H IH 5 DocID029064 Rev 1 Alternating current mains switch - basic application ACS108-8TN Alternating current mains transient voltage ruggedness The ACS108-8TN switch is able to withstand safely the AC mains transients either by clamping the low energy spikes or by breaking-over when subjected to high energy shocks, even with high turn-on current rises. The test circuit shown in Figure 18 is representative of the final ACS108-8TN application, and is also used to test the AC switch according to the IEC 61000-4-5 standard conditions. Thanks to the load limiting the current, the ACS108-8TN switch withstands the voltage spikes up to 2 kV above the peak mains voltage. The protection is based on an overvoltage crowbar technology. Actually, the ACS108-8TN breaks over safely as shown in Figure 19. The ACS108-8TN recovers its blocking voltage capability after the surge (switch off back at the next zero crossing of the current). Such non-repetitive tests can be done 10 times on each AC mains voltage polarity. Figure 18: Overvoltage ruggedness test circuit for resistive and inductive loads, Tamb = 25 °C (conditions equivalent to IEC 61000-4-5 standard) Surge generator Rgenerator Filtering unit Cc Model of the load L R OUT AC mains 2.1.2 GATE Rg COM R = 150 Ω, L = 5 μH, Vpp = 2 kV (Surge Generator), Rg = 220 Ω, AC mains = 230 VRMS 50 Hz, Cc = 18 μF. DocID029064 Rev 1 9/14 Alternating current mains switch - basic application ACS108-8TN Figure 19: Typical current and voltage waveforms across the ACS108-8TN (+2 kV surge, IEC 61000-4-5 standard) V T (200 V/div) IT max = 15.8 A dIT/dt = 78 A/us IT (4 A/div) 1 us/div 10/14 DocID029064 Rev 1 Package information ACS108-8TN 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.   3.1 Epoxy meets UL94, V0 Lead-free packages SOT-223 package information Figure 20: SOT-223 package outline DocID029064 Rev 1 11/14 Package information ACS108-8TN Table 6: SOT-223 package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches Max. A Min. Typ. 1.80 A1 0.02 0.10 0.071 0.001 0.004 B 0.60 0.70 0.85 0.024 0.027 0.033 B1 2.90 3.00 3.15 0.114 0.118 0.124 c 0.24 0.26 0.35 0.009 0.010 0.014 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.3 0.090 e1 4.6 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V 10° max. Figure 21: SOT-223 footprint (dimensions in mm) 3.25 1.32 5.16 7.80 1.32 2.30 12/14 Max. 0.95 DocID029064 Rev 1 Ordering information ACS108-8TN 4 Ordering information Figure 22: Ordering information scheme ACS 1 08 - 8 T N - TR AC switch series Number of switches Current 08 = 0.8 A rms Voltage 8 = 800 V Sensitivity S = 5 mA Package N = SOT-223 Packing TR = Tape and reel Table 7: Ordering information 5 Order code Marking Package Weight Base qty. Delivery mode ACS108-8TN-TR ACS1088T SOT-223 0.11 g 1000 Tape and reel Revision history Table 8: Document revision history Date Revision 02-Jun-2016 1 Changes Initial release. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 14/14 DocID029064 Rev 1