AM80610-030

AM80610-030 R F & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLF L (S042) hermetically sealed ORDER CODE AM80610-030 BRANDING 80610-30 DESCRIPTION The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment. The AM80610-030 is provided in the industrystandard, metal/ceramic AMPAC™ hermetic package. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 °C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 57 3.0 32 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W *Applies only to rated RF amplifier operation AM80610-030 E LECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Symbo l T est Con ditio ns Value Min. Typ . Max. Un it BVCBO BVEBO BVCER ICES hFE IC = 20 mA IE = 2 mA IC = 40 mA VBE = 0 V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 Ω VCE = 28 V IC = 2 A 55 3.5 55 — 15 — — — — — — — — 10 150 V V V mA — DYNAMIC Symbo l Test Con dition s Value Min . Typ . Max. Unit POUT ηc GP f = 620 − 960 MHz f = 620 − 960 MHz f = 620 − 960 MHz PIN = 4.2 W PIN = 4.2 W PIN = 4.2 W VCC = 28 V VCC = 28 V VCC = 28 V 30 50 8.5 — — — — — — W % dB TEST CIRCUIT Dwg.No. C127464 AM80610-030 P ACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0213 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.