AM80814-005
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . . .
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 5.0 W MIN. WITH 8.5 dB GAIN
.310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM80814-005 BRANDING 80814-5
DESCRIPTION The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM80814-005 is supplied in the IMPAC™ Hermeti c M etal/ Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
23 1.0 28 250 - 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
6.5
°C/W
August 1992
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AM80814-005
E LECTRICAL SPECIFICATIONS (T case = 25° C) STATIC
Value Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω VCE = 28V IC = 250mA
48 3.5 48 — 30
— — — — —
— — — 500 300
V V V mA —
Test Conditions
Min.
Value Typ.
Max.
Unit
POUT ηc GP
Note:
f = 850 — 1400MHz f = 850 — 1400MHz f = 850 — 1400MHz = =
120 µ S 4%
PIN = 0.7W PIN = 0.7W PIN = 0.7W
VCC = 28V VCC = 28V VCC = 28V
5.0 35 8.5
5.7 40 9.0
— — —
W % dB
Pulse W idth Duty Cycle
TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY
8
(Watts) PIN
90 85 80 C O L L E C T O R E F F I C I E N C Y %
7 P O W E R O U T P U T
0.7
6
75 70
0.6
5
65
0.5
4
PW = 120 µS DC = 4% VCC = 28 V
PIN = 0.5, 0.6W
60 55 50
PIN = 07W
3
45 40 35
2 800 950 1100 FREQUENCY (MHz) 1250 1400
30
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AM80814-005
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE ZIN
ZIN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L H ZCL
L
PIN = 0.7 W VCC = 28 V Normalized to 50 ohms
H
FREQ. L = 0.85 GHz • = 1.0 GHz • = 1.1 GHz • = 1.2 GHz • = 1.3 GHz H = 1.4 GHz
ZIN (Ω) 0.22 + j 0.29 0.21 + j 0.25 0.19 + j 0.22 0.18 + j 0.17 0.17 + j 0.15 0.16 + j 0.14
ZCL (Ω) 0.13 + j 0.15 0.18 + j 0.18 0.23 + j 0.17 0.32 + j 0.16 0.29 + j 0.02 0.22 − j 0.06
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AM80814-005
TEST CIRCUIT
All dimensions are in inches. Substrate material: .025 thick AI2 O3 C1 C2 C3 C4 : : : : 100 µF Electrolytic Capacitor, 63V .1 µF Ceramic Capacitor Feedthrough Bypass SC! 712-022 .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor C5 C6 L1 L2 : : : : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor 100 pF Chip Capacitor No. 26 Wire, 4 Turn No. 26 Wire, 4 Turn
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AM80814-005
PACKAGE MECHANICAL DATA
.318/ .306
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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