AM80814-025

AM80814-025 RF & MICROWAVE TRANSISTORS L -BAND RADAR APPLICATIONS . . . . . . . P RELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 7.0 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM80814-025 BRANDING 80814-25 PIN CONNECTION DESCRIPTION AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications. This device is capable of operation over a broad range of pulse widths and duty cycles. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM80814-025 is supplied in the industry-standard AMPAC™ hermetic Metal/Ceramic package incorporating Input/Output impedance matching. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation*(TC ≤ 75˚C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature 75 3.5 38 250 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.3 °C/W *Applies only to rated RF amplifier operation August 1992 1/3 AM80814-025 E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 10mA IE = 1mA IC = 20mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 28V IC = 1A 55 3.5 55 — 15 — — — — — — — — 5 150 V V V mA — DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT ηc GP Note: f = 850 — 1400MHz f = 850 — 1400MHz f = 850 — 1400MHz = = 120 µ S 4% PIN = 5.0W PIN = 5.0W PIN = 5.0W VCC = 35V VCC = 35V VCC = 35V 25 38 7.0 — — — — — — W % dB Pulse Width Duty Cycle PACKAGE MECHANICAL DATA 2/3 AM80814-025 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3