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AM80912-015

AM80912-015

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    AM80912-015 - AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS - STMicroelectronics

  • 数据手册
  • 价格&库存
AM80912-015 数据手册
AM80912-015 . . . . . . . . RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 15 W MIN. WITH 8.1 dB GAIN BANDWIDTH 255 MHz .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM80912-015 BRANDING 80912-15 PIN CONNECTION DESCRIPTION The AM80912-015 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM80912-015 is housed in the unique IMPAC™ Hermetic Metal/Ceramic package with ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation*(TC ≤ 100°C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature 50 1.8 32 250 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 3.0 °C/W *Applies only to rated RF amplifier operation March 1994 1/6 AM80912-015 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 10mA IE = 1mA IC = 10mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10 Ω VCE = 28V IC = 500mA 55 3.5 55 — 15 — — — — — — — — 2.0 150 V V V mA — DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT ηc GP Note: f = 960 — 1215MHz f = 960 — 1215MHz f = 960 — 1215MHz PIN = 2.3W PIN = 2.3W PIN = 2.3W VCC = 28V VCC = 28V VCC = 28V 15 45 8.1 17 49 8.9 — — — W % dB Pulse format: 6.4 µ S on 6.6 µ S off, repeat for 3.3 ms, t hen off for 4.5125 ms. Duty Cycle: Burst 49. 2%, overal l 20.8% 2/6 AM80912-015 T YPICAL PERFORMANCE RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE TYPICAL BROADBAND POWER AMPLIFIER MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE 3/6 AM80912-015 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 2.3 W VCC = 28 V Z O* = 50 ohms FREQ. L = 960 MHz M = 1090 MHz H = 1215 MHz ZIN (Ω) 5.7 + j 4.3 5.8 + j 2.5 5.0 + j 3.0 ZCL (Ω) 5.7 + j 7.7 4.3 + j 6.5 4.0 + j 4.8 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 2.3 W VCC = 28 V ZO* = 50 ohms *Normalized Impedance 4/6 AM80912-015 TEST CIRCUIT Ref.: Dwg. No. 104-000284 5/6 AM80912-015 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-221 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6
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