AM80912-030

AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM80912-030 BRANDING 80912-30 DESCRIPTION The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM80912-030 is supplied in the hermetic metal/ceramic package with internal input matching structures. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Collector Current* (TC ≤ 85° C) 75 3.5 40 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.2 °C/W *Applies only to rated RF amplifier operation. August 1992 1/6 AM80912-030 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min . Typ. Max. Unit BV CBO BV EBO BV CER ICES hFE DYNAMIC IC = 10mA IE = 1mA IC = 20mA VCE = 35V VCE = 5V IC = 1.0A RBE = 10Ω 55 3.5 55 — 15 — — — — — — — — 5.0 150 V V V mA — Value Symbol Test Conditions Min . Typ. Max. Unit POUT f = 960 — 1215MHz f = 960 — 1215MHz f = 960 — 1215MHz 6.4 µs on 6. 6 µ s PIN = 5.0W PIN = 5.0W PIN = 5.0W VCC = +35V VCC = +35V VCC = +35V 30 40 7.8 36 45 8.6 — — — W % dB ηC GP Note: Pul se format: Duty Cycle: off, repeat f or 3.3 ms, then off for 4.5125 ms. Burst 49.2%, overall 20.8% 2/6 AM80912-030 T YPICAL PERFORMANCE TYPICAL RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY* vs COLLECTOR VOLTAGE TYPICAL BROADBAND POWER AMPLIFIER MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE DC = 20% Θjc (°C/W) DC = 4% PIN = 5 W VCC = 35 V TC = 40°C PULSE WIDTH (µsec) 3/6 AM80912-030 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 5W VCC = +35V ZO* = 50Ω FREQ. L = 960 MHz M = 1090 MHz H = 1215 MHz ZIN (Ω) 4.5 + j 6.0 5.5 + j 6.3 5.0 + j 5.0 ZCL (Ω) 11.0 − j 0.5 12.0 − j 2.0 12.5 − j 5.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 5W VCC = +35V ZO* = 50Ω *Normalized Impedance 4/6 AM80912-030 TEST CIRCUIT P ACKAGE MECHANICAL DATA 5/6 AM80912-030 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6