AM81214-006

AM81214-006 R F & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W MIN. WITH 10 dB GAIN .310 x .310 2LF L (S064) hermetically sealed ORDER CODE AM81214-6 BRANDING 81214-6 DESCRIPTION The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM81214-006 is supplied in the grounded IMPAC™ Hermetic Metal/Ceramic package with internal input/output matching structures. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 °C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100 °C) 16.7 0.82 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 9.0 °C/W *Applies only to rated RF amplifier operation AM81214-006 E LECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Symbo l Test Con dition s Valu e Min. T yp. Max. Un it BVCBO BVCER BVEBO ICES hFE DYNAMIC Symbol IC = 1 mA IC = 5 mA IE = 1 mA VBE = 0 V VCE = 5 V IE = 0 mA RBE = 10Ω IC = 0 mA VCE = 28 V IC = 500 mA 48 48 3.5 — 15 — — — — — — — — 500 300 V V V µA — Test Con ditio ns Value Min. Typ . Max. Unit POUT ηc GP Note: f = 1.2 — 1.4 GHz f = 1.2 — 1.4 GHz PIN = 0.5 W PIN = 0.5 W PIN = 0.5 W VCC = 28 V VCC = 28 V VCC = 28 V — 47 10 5.5 52 10.5 6.2 — — W % dB f = 1.2 — 1.4 GHz Pulse Width = 1000 µ S Duty Cycle = 10% TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE AM81214-006 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL FREQ. L = 1.2 GHz M = 1.3 GHz ZIN(Ω) 10.5 + j 9.0 9.5 + j 8.0 ZCL(Ω) 9.0 + j 3.0 6.5 + j 2.0 PIN = 0.5 W VCC = 28 V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 C4 : : : : 0.2—2.5 pF Johanson Gigatrim Capacitor 0.2—2.5 pF Johanson Gigatrim Capacitor 1500 pF Filtercon Feedthrough 0.1 µF, Ceramic Capacitor C5 C6 L : 100 µF, Electrolytic Capacitor : 100 pF Chip Capacitor : No. 26 Wire, 4 Turn .062 I.D. AM81214-006 P ACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0221 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.