AM81214-015
RF & MICROWAVE TRANSISTORS L -BAND RADAR APPLICATIONS
. . . . . . . .
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 14.5 W MIN. WITH 8.6 dB GAIN
.310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM 81214-015 BRANDING 81214-15
PIN CONNECTION DESCRIPTION The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM81214-015 is supplied in the grounded IMPAC™ Hermetic Metal/Ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
37.5 1.8 32 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 4.0 °C/W
*Applies only to rated RF amplifier operation
August 1992
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AM81214-015
E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Value Symbol Test Conditions Min . Typ. Max. Unit
BV CBO BV EBO BV CER ICES hFE
IC = 15mA IE = 1.5mA IC = 15mA VCE = 28V VCE = 5V
IE = 0mA IC = 0mA RBE = 10 Ω VBE = 28V IC = 1A
48 3.5 48 — 30
— — — — —
— — — 1.5 300
V V V mA —
DYNAMIC
Value Symbol Test Conditions Min . Typ. Max. Unit
PIN ηc GP
Note:
f = 1.2 — 1.4GHz f = 1.2 — 1.4GHz f = 1.2 — 1.4GHz = =
1000 10%
PIN = 2W Peak PIN = 2W Peak PIN = 2W Peak
VCC = 28V VCC = 28V VCC = 28V
14.5 48 8.6
17.0 58 9.3
— — —
W % dB
Pul se Widt h Duty Cycle
µS
TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE
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AM81214-015
IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN
TYPICAL COLLECTOR LOAD IMPEDANCE ZCL
FREQ. L = 1.2 GHz M = 1.3 GHz H = 1.4 GHz
ZIN (Ω) 3.0 + j 6.5 3.5 + j 7.5 5.0 + j 7.0
ZCL (Ω) 16 + j 3.0 13 + j 6.0 11 + j 5.0 PIN = 2 W VCC = 28 V Normalized to 50 ohms
T EST CIRCUIT
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AM81214-015
PACKAGE MECHANICAL DATA
.318/ .306
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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