AM81214-030

AM81214-030 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 26 W MIN. WITH 7.2 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM81214-030 BRANDING 81214-30 DESCRIPTION The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM81214-030 is supplied in the IMPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 63 2.75 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.4 °C/W *Applies only to rated RF amplifier operation August 1992 1/6 AM81214-030 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 10mA IE = 1mA IC = 20mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 28V IC = 1A 55 3.5 55 — 15 — — — — — — — — 5 150 V V V mA — DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit PIN ηc GP Note: f = 1215 — 1400MHz f = 1215 — 1400MHz f = 1215 — 1400MHz = = 1000 µ S 10% PIN = 5W Peak PIN = 5W Peak PIN = 5W Peak VCC = 28V VCC = 28V VCC = 28V 26 45 7.2 36 49 8.5 — — — W % dB Pulse W idth Duty Cycle 2/6 AM81214-030 T YPICAL PERFORMANCE RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE TYPICAL BROADBAND POWER AMPLIFIER MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH 3/6 AM81214-030 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 5.0 W VCC = 28 V ZO = 50 Ohms FREQ. L = 1.215 GHz M = 1.300 GHz H = 1.400 GHz ZIN (Ω) 4.5 + j 12.5 8.5 + j 13.5 9.5 + j 10.0 ZCL (Ω) 11.0 − j 10.0 10.5 − j 6.5 8.0 − j 5.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 5.0 W VCC = 28 V ZO = 50 Ohms 4/6 AM81214-030 TEST CIRCUIT P ACKAGE MECHANICAL DATA .318/ .306 5/6 AM81214-030 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6