AM81719-030

AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . . . . P RELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 28 W MIN. WITH 6.7 dB GAIN .400 SQ 2LFL (M147) hermetically sealed ORDER CODE AM81719-030 BRANDING 81719-030 PIN CONNECTION DESCRIPTION The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to ensure long term reliability and product consistency. AM81719-030 is supplied in the industry-standard AMPAC™ hermetic metal/ceramic package. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 67.3 2.67 28 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W *Applies only to rated RF amplifier operation September 1992 1/4 AM81719-030 E LECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCES ICES hFE DYNAMIC Symbol IC = 10mA IE = 10mA IC = 10mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA VCE = 28V IC = 2mA 45 3.0 45 — 15 — — — — — — — — 5 150 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP f = 1.75 — 1.85GHz f = 1.75 — 1.85GHz f = 1.75 — 1.85GHz PIN = 6.0W PIN = 6.0W PIN = 6.0W VCC = 28V VCC = 28V VCC = 28V 28 40 6.7 — — — — — — W % dB TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICENCY vs POWER INPUT 2/4 AM81719-030 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN Z IN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L H H Z CL FREQ. L = 1.7 GHz H = 1.9 GHz ZIN (Ω) 10.5 + j 16.0 9.5 + j 14.5 ZCL (Ω) 2.5 − j 2.0 2.5 + j 0.0 2.5 + j 2.0 L PIN = 6.0 W VCC = 28 V Normalized to 50 ohms M = 1.8 GHz 10.25 + j 15.0 T EST CIRCUIT Ref. Dwg. No. C125450A All dimensions are in inches. 3/4 AM81719-030 P ACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0147 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4