AM81719-040
R F & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS
. . . . . .
PRELIMINARY DAT A
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN
.400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE AM81719-040 BRANDING 81719-40
PIN CONNECTION
DESCRIPTION The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wirebonding is employed to ensure long-term reliability and product consistency.
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Valu e Un it
PDISS IC VCC TJ T STG
Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature
79.5 4.8 30 200 − 65 to +200
W A V °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.2 °C/W
*Applies only to rated RF amplifier operation
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AM81719-040
E LECTRICAL SPECIFICATIONS (T case = 25 °C) STATIC
Symbo l T est Co nditions Value Min . T yp. Max. Unit
BVCBO BVEBO BVCES ICBO hFE
IC = 50 mA IE = 4 mA IC = 80 mA VCB = 28 V VCE = 30 V
IE = 0 mA IC = 0 mA
42 3.5 45 —
— — — — —
— — — 8 300
V V V mA —
IC = 2.5 A
30
DYNAMIC
Symbo l Test Cond ition s Valu e Min. T yp. Max. Un it
POUT ηc GP
f = 1750 − 1850 MHz f = 1750 − 1850 MHz f = 1750 − 1850 MHz
PIN = 8.0 W PIN = 8.0 W PIN = 8.0 W
VCC = 28 V VCC = 28 V VCC = 28 V
40 43 6.7
— — —
— — —
W % dB
TEST CIRCUIT
Ref.: Dwg. No. 101-000698
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PACKAGE MECHANICAL DATA
Ref: Dwg. No. 12-0228 rev. B
Information furnished is believed to be accurate and reliable. However, SGS-T HOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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