AM81720-012

AM81720-012 RF & MICROWAVE TRANSISTORS C OMMUNICATIONS APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 7.4 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM81720-012 BRANDING 81720-12 PIN CONNECTION DESCRIPTION The AM81720-012 is designed specifically for Telecommunications applications. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/gold metallization system. The unique AMPAC™ devices are housed in Hermetic Metal/Ceramic packages with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 31.8 1.47 24 200 − 65 to +200 W A V °C °C °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 5.5 *Applies only to rated RF amplifier operation NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. September 1992 1/4 AM81720-012 E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO ICBO hFE IC = 5mA IE = 5mA VCB = 24V VCE = 5V IE = 0mA IC = 0mA IC = 1A 45 3.0 — 15 — — — — — — 1.25 150 V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc GP f = 1.7 — 2.0GHz f = 1.7 — 2.0GHz f = 1.7 — 2.0GHz PIN = 2.2W PIN = 2.2W PIN = 2.2W VCC = 24V VCC = 24V VCC = 24V 12 40 7.4 — — — — — — W % dB TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT COLLECTOR EFFICIENCY vs POWER INPUT 2/4 AM81720-012 TEST CIRCUIT Ref.: Dwg.No. J125331 P ACKAGE MECHANICAL DATA 3/4 AM81720-012 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4