AM82223-010

AM82223-010 RF & MICROWAVE TRANSISTORS T ELEMETRY APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY AT RATED CONDITIONS LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 9 W M IN. WITH 6.5 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM82223-010 BRANDING 82223-10 DESCRIPTION The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 − 2.3 GHz frequency range. Suitable for hi-rel aerospace telemetry applications, the AM82223-010 is provided in the industry-standard AMPAC™ metal/ceramic hermetic package and incorporates internal input and output impedance matching structures along with a rugged, emitter-site ballasted overlay die geometry. AM82223-010 is capable of withstanding ∞:1 load mismatch at any phase angle under full rated operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PIN CONNECTION PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 75˚C) 28 1.2 26 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 4.4 °C/W *Applies only to rated RF amplifier operation NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. August 31, 1994 1/3 AM82223-010 E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Symbol Test Conditions Min. Value Typ. Max. Unit BVCBO BVCER BVEBO ICBO hFE I C = 5 mA IC = 10 mA I E = 1 mA VCB = 24 V VCE = 5 V IE = 0 mA RBE = 10 Ω IC = 0 mA IC = 750 mA 45 45 3.5 — 20 — — — — — — — — 1 300 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc PG f = 2.2 − 2.3 GHz f = 2.2 − 2.3 GHz f = 2.2 − 2.3 GHz PIN = 2.0 W PIN = 2.0 W PIN = 2.0 W VCC = 24 V VCC = 24 V VCC = 24 V 9.0 40 6.5 — — — — — — W % dB 2/3 A M82223-010 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0213 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 3/3