AM82731-003

AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 3.0 W. MIN. WITH 5.7 dB GAIN BANDWIDTH = 400 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-003 BRANDING 82731-3 DESCRIPTION The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM82731-003 is supplied in the hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 23 0.9 34 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 6.5 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-003 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CBO BV EBO BV CER ICES hFE IC = 2mA IE = 1mA IC = 2mA VCE = 30V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 200mA 50 3.5 50 — 10 — — — — — — — — 2.0 — V V V mA — DYNAMIC Value Symbol Test Conditions f = 2.7 — 3.1GHz f = 2.7 — 3.1GHz f = 2.7 — 3.1GHz = = 100 µ S 10% Min. Typ. Max. Unit POUT ηC GPB Note: PIN = 0.8W PIN = 0.8W PIN = 0.8W VCC = 30V VCC = 30V VCC = 30V 3.0 27 5.7 4.0 37 7.0 — — — W % dB Pulse W idth Duty Cycle TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE PEAK POWER OUTPUT (W) 1.0 0.8 0.6 COLLECTOR EFFICIENCY (%) 0.6 0.8 1.0 2/4 AM82731-003 IMPEDANCE DATA TYPICAL INPUT IMPEDANCES ZIN TYPICAL COLLECTOR LOAD IMPEDANCES ZCL FREQ. L = 2.7 GHz • = 2.9 GHz M = 3.1 GHz • = 3.3 GHz H = 3.5 GHz ZIN(Ω) 11.5 + j 14.0 11.5 + j 12.5 10.0 + j 15.5 11.0 + j 19.0 11.0 + j 20.5 ZCL(Ω) 22.5 + j 5.5 19.5 + j 5.0 14.5 + j 2.0 14.5 − j 2.0 17.5 − j 3.5 PIN = 0.8W VCC = 30 V Normalized at 50 ohms T EST CIRCUIT All dimensions are in inches. Substrate material: .025 thick Al2O3 (Er = 9.6) C1 C2 C3 : 100 pF Microwave Chip Capacitor : 100 pF Microwave Chip Capacitor (Note: Capacitor is mounted on its thin side) : 1500 pF, RF Feedthru C4 L1 L2 L3 : : : : 100 µ F, Electrolytic Capacitor No. 32 Wire, 0.500 Inch Long Printed RF Choke Printed RF Choke 3/4 AM82731-003 P ACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4