AM82731-006

AM82731-006 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN BANDWIDTH = 400 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-006 BRANDING 82731-6 PIN CONNECTION DESCRIPTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM82731-006 is supplied in the hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS Ic VCC TJ T STG Power Dissipation* Device Current* (TC ≤100°C) 40 1.8 34 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 3.75 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-006 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CBO BV EBO BV CER ICES hFE ICC = 5mA IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA 50 3.5 50 — 10 — — — — — — — — 4 — V V V mA — IE = 1mA IC = 5mA VCE = 30V VCE = 5V DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT ηC GPB Note: f = 2.7 — 3.1GHz f = 2.7 — 3.1GHz f = 2.7 — 3.1GHz = = 100 µ S 10% PIN = 1.5W PIN = 1.5W PIN = 1.5W VCC = 30V VCC = 30V VCC = 30V 5.5 27 5.6 6.0 32 6.0 — — — W % dB Pul se Width Dut y Cycle TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE 2/4 AM82731-006 IMPEDANCE DATA TYPICAL INPUT IMPEDANCES ZIN ZIN M TYPICAL COLLECTOR LOAD IMPEDANCES ZCL L H ZCL FREQ. L = 2.7 GHz ZIN(Ω) ZCL(Ω) H 9.0 + j 22.0 48.0 + j 11.5 M L • = 2.9 GHz 9.0 + j 23.0 43.0 + j 9.0 M = 3.1 GHz 12.5 + j 25.0 30.0 + j 3.0 • = 3.3 GHz 20.0 + j 25.0 21.5 + j 0.0 H = 3.5 GHz 22.0 + j 22.5 16.0 − j 3.0 PIN = 1.5W VCC = 30V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick Al2O3 (Er = 9.6) C1 C2 : 1500 pF RF Feedthru : 100 µF Electrolytic C3 L1 L2 : 100 pF Chip Capacitor : No. 32 Wire, 0.062 Inch Long : Printed RF Choke 3/4 AM82731-006 P ACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4