AM82731-012

AM82731-012 RF & MICROWAVE TRANSISTORS S -BAND RADAR APPLICATIONS . . . . . . . P RELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 6.0 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE BRANDING AM82731-012 82731-12 DESCRIPTION The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operaion over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM82731-012 is supplied in the Hermetic Metal/Ceramic package with internal Input/Output impedance matching sircuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PIN CONNECTION PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 50˚C) 50 2.0 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 4.0 °C/W *Applies only to rated RF amplifier operation August 1992 1/3 AM82731-012 E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 7mA IE = 1mA IC = 7mA VCE = 40V VCE = V IE = 0mA IC = 0mA RBE = 10Ω IC = 600mA 55 3.5 55 — 30 — — — — — — — — 5 300 V V V mA — DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT ηc GP Note: f = 2700 —3100 MHz f = 2700 —3100 MHz f = 2700 —3100 MHz = = 100 µ S 10% PIN = 3.0W PIN = 3.0W PIN = 3.0W VCC = 40V VCC = 40V VCC = 40V 12 30 6.0 — — — — — — W % dB Pulse Width Duty Cycle PACKAGE MECHANICAL DATA 2/3 AM82731-012 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3