AM82731-050

AM82731-050 . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 6 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50 DESCRIPTION The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM82731-050 is supplied in the AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 167 8 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.2 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-050 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 25mA IE = 5mA IC = 25mA VCE = 40V VCE = 5V IE = 0mA IC = 0mA RBE = 10 Ω IC = 3A 55 3.5 55 — 30 — — — — — — — — 20 — V V V mA — DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT ηc GP Note: f = 2700 — 3100MHz f = 2700 — 3100MHz f = 2700 — 3100MHz = = 100 µ S 10% PIN = 12.5W PIN = 12.5W PIN = 12.5W VCC = 40V VCC = 40V VCC = 40V 50 30 6.0 56 35 6.5 — — — W % dB Pul se Widt h Duty Cycle TYPICAL PERFORMANCE COLLECTOR EFFICIENCY vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY 50 C O L L E C T O R A I E F F d I B C I E N C Y 20 5.00 30 N 6.00 40 8.00 GAIN vs FREQUENCY GAIN vs FREQUENCY 36.4 39.5 6.93 38.0 Upper Window Mean Lower Window G 7.19 6.43 7.00 Upper Window Mean Lower Window 50 Watts Ouput @ 100 µS 10% Pulse VCC = 40 Volts 10 2.7 2.9 3.1 4.00 2.7 50 Watts Output @ 100 µS 10% Pulse VCC = 40 Volts % 2.9 3.1 FREQUENCY FREQUENCY 2/4 AM82731-050 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN ZIN L H H TYPICAL COLLECTOR LOAD IMPEDANCE ZCL ZCL L FREQ. L = 2.7 GHz M = 2.9 GHz H = 3.1 GHz ZIN (Ω) 7.4 + j 5.4 7.8 + j 3.0 8.0 + j 2.0 ZCL (Ω) 7.1 − j 8.6 5.4 − j 7.4 4.6 − j 2.6 PIN = 12.5 W VCC = 40 V Z0 = 50 ohms TEST CIRCUIT 3/4 AM82731-050 P ACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4