AM83135-001

AM83135-001 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 1.0 W MIN. WITH 5.2 dB GAIN . 400 x .400 2NLF L (S042) hermetically sealed O RDER CODE AM83135-001 BRANDING 83135-1 DESCRIPTION The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM83135-001 is supplied int the AMPAC™ Hermet ic/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability apABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Un it PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤100 °C) 11.5 0.45 34 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA Junction-Case Thermal Resistance* RTH(j-c) *Applies only to rated RF amplifier operation 13.0 °C/W February 3, 1997 1/5 AM83135-001 E LECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Symb ol Test Con ditio ns Value Min. T yp. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 1mA IE = 1mA IC = 1mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 30V IC = 100mA 45 3.5 45 — 10 — — — — — — — — 1 — V V V mA — DYNAMIC Symb ol T est Co nditi ons Value Min. Typ . Max. Un it POUT ηc GP Note: = 3.1 — 3.5GHz f = 3.1 — 3.5GHz f = 3.1 — 3.5GHz f = = 100 10% PIN = 0.3W PIN = 0.3W PIN = 0.3W VCC = 30V VCC = 30V VCC = 30V 1.0 27 5.2 1.4 35 6.7 — — — W % dB P uls e Wi dth D uty Cycl e µS 2/5 AM83135-001 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN ZIN PIN = 0.3 W VCC = 30 V ZO = 50 ohms H L FREQ. L = 3.1 GHz M = 3.3 GHz H = 3.5 GHz ZIN (Ω) 46.0 + j 14.5 43.0 + j 10.0 38.0 + j 10.0 ZCL (Ω) 12.0 − j 0.0 11.0 − j 6.5 9.0 − j 15.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L ZCL PIN = 0.3 W VCC = 30 V ZO = 50 ohms H 3/5 AM83135-001 TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 L1 L2 : : : : : 1500 pF RF Feedthrough 100 MF Electrolytic 100 pF Chip No. 26 Wire, 4 Turn .062 I.D. Printed RF Choke 4/5 AM83135-001 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0213 rev. A UDCS No. 1011416 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1997 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. 5/5